Nanoseconds Switching Time Monitoring of Insulated Gate Bipolar Transistor Module by Under-Sampling Reconstruction of High-Speed Switching Transitions Signal

Abstract

An insulated gate bipolar transistor (IGBT) is one of the most reliable critical components in power electronics systems (PESs). The switching time during IGBT turn-on/off transitions is a good health status indicator for IGBT. However, online monitoring of IGBT switching time is still difficult in practice due to the requirement of extremely high sampling rate for nanoseconds time resolution. The compressed sensing (CS) method shows a potential to overcome the technical difficult by reducing the sampling rate. To further improve the efficiency and reduce the computational time for IGBT online condition monitoring (CM), an under-sampling reconstruction method of an IGBT high-speed switching signal is presented in this paper. First, the physical mechanism and signal characteristics of IGBT switching transitions are analyzed. Then, by utilizing the sparse characteristics of IGBT switching signal in the wavelet domain, the wavelet basis is used for sparse representation. The stagewise orthogonal matching pursuit (StOMP) algorithm is proposed to enhance the convergence speed for switching signal reconstruction. Experiments are performed on not only a double-pulse test rig but also a real Pulse-Width Modulation (PWM) converter. Results show that the IGBT high-speed switching transitions signal can be accurately recovered with a reduced sampling rate and the nanoseconds switching time change can be monitored for IGBT CM.

Parasitic Capacitive Couplings in Medium Voltage Power Electronic Systems: An Overview

“…For a typical hard switched controllable power semiconductor device, the switching losses are dependent on the switching speed and loading profile of the device. The switching speed is governed by the charging and discharging dynamics of the intrinsic capacitances of the semiconductor device [72]. During the switching transition, the parasitic capacitive couplings present in the switching loop of the power semiconductor device needs to be charged and discharged which results in two main issues; a) an effective reduction in device switching speed which will result in higher switching loss energy dissipation (E sw ) due to the increase of the Volt-Ampere integral [73], [74], and b) induced capacitive displacement currents through the channel of the semiconductor devices, which with the push towards systems design using WBG semiconductor devices with higher switching speeds, will effectively increases the switched current magnitude as is showcased from (1), thus incurring additional switching losses during the dynamic switching transition period [21].…”

Design new voltage balancing control series connected for HV-IGBT`s

“…The gate drivers able to control induced drop inductance levels in an external circuit caused it to rely on the turn off overshoot and to avoid overshoots in the turn-on assisted by steady-state voltage divisions. To withstand more voltages when switching where the device must act to be more likely, in the meantime, to withstand higher voltages during activation of slow devices [26]. In this paper, the new proposed serial-connected IGBT is evaluated in both hardware experiment and simulation.…”

Efficient Implementations for Orthogonal Matching Pursuit

“…Recently, the OMP algorithm has been applied in various scenarios [7][8][9][10][11][12][13]. The stagewise OMP algorithm was proposed in [7] to enhance the convergence speed for switching signal reconstruction in IGBT (insulated gate bipolar transistor) online condition monitoring, while the SiT based stagewise OMP was propopsed in [8] for the estimation of massive-MIMO sparse uplink channels. A modified OMP algorithm was utilized in [9] to propose compressed sensing ISAR (inverse synthetic aperture radar) imaging with highly maneuvering motion.…”