Nanosession: Mott Insulators and Transitions

We study the Mott insulator compound GaTa4Se8 in which we previously discovered an electric-field-induced resistive transition. We show that the resistive switching is associated to the appearance of metallic and super-insulating nanodomains by means of scanning tunneling microscopy/spectroscopy (STM/STS). Moreover, we show that local electronic transitions can be controlled at the nanoscale at room temperature using the electric field of the STM tip. This opens the way for possible applications in resistive random access memories (RRAM) devices.

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Resistive Switching at the Nanoscale in the Mott Insulator Compound GaTa₄Se₈

Dubost

Cren

Vaju

et al. 2013

Nano Lett.

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Nanosession: Mott Insulators and Transitions

Cited by 1 publication

References 30 publications

Resistive Switching at the Nanoscale in the Mott Insulator Compound GaTa₄Se₈

Resistive Switching at the Nanoscale in the Mott Insulator Compound GaTa₄Se₈

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Nanosession: Mott Insulators and Transitions

Cited by 1 publication

References 30 publications

Resistive Switching at the Nanoscale in the Mott Insulator Compound GaTa4Se8

Resistive Switching at the Nanoscale in the Mott Insulator Compound GaTa4Se8

Contact Info

Product

Resources

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Resistive Switching at the Nanoscale in the Mott Insulator Compound GaTa₄Se₈

Resistive Switching at the Nanoscale in the Mott Insulator Compound GaTa₄Se₈