Nanoshape Imprint Lithography for Fabrication of Nanowire Ultracapacitors

Cherala, Anshuman; Chopra, Meghali; Yin, Bailey Anderson; Mallavarapu, Akhila; Singhal, Shrawan; Abed, Ovadia; Bonnecaze, Roger T.; Sreenivasan, Sameet

doi:10.1109/tnano.2016.2541859

Cited by 10 publications

(10 citation statements)

References 24 publications

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“…2. In previous work [41], [42], it has been shown that the performance of nanoscale capacitors depends on the surface area. With the use of multilevel patterning and perfect alignment, solid circular cross-sections of these capacitors can be enhanced into hollow tubular cross-sections.…”

Section: Motivationmentioning

confidence: 99%

“…Using hard mask 1 (41) as implant mask, low energy ion implantation is carried out to form shallow lightly doped source and drain regions (70) in the exposed substrate (20). In step 6, a thin layer of material (42) same as that of hard mask material 1 (40) is deposited. This material is then blanket etched to define side wall spacers (43) in step 7.…”

Section: Appendix a Fabrication Of A Wafer-scale Nmos Array Using A Smentioning

confidence: 99%

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Fabrication of self-aligned multilevel nanostructures

Joseph

Singhal

Abed

et al. 2017

Microelectronic Engineering

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Section: Motivationmentioning

confidence: 99%

Section: Appendix a Fabrication Of A Wafer-scale Nmos Array Using A Smentioning

confidence: 99%

Fabrication of self-aligned multilevel nanostructures

Joseph

Singhal

Abed

et al. 2017

Microelectronic Engineering

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“…Metal mesh grids (MMGs) can be utilized as a cheap, flexible alternative to metal oxide layers (e.g., indium tin oxide) for transparent conducting films [3][4][5]. Arrays of Si nanopillars are also being looked to for an extensive list of applications including gas sensing [6][7][8], optical sensing [9][10][11], battery technology [12], ultracapacitors [13,14], and memory devices [15][16][17], as well as for color filtering in printing [18,19], displays, and imaging devices [11].…”

Section: Introductionmentioning

confidence: 99%

Spectral Imaging and Computer Vision for High-Throughput Defect Detection and Root-Cause Analysis of Silicon Nanopillar Arrays

Gawlik

Barr

Mallavarapu

et al. 2021

Journal of Micro and Nano-Manufacturing

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Far-field spectral imaging, coupled with computer vision methods, is demonstrated as an effective inspection method for detection, classification, and root-cause analysis of manufacturing defects in large area Si nanopillar arrays. Si nanopillar arrays exhibit a variety of nanophotonic effects, causing them to produce colors and spectral signatures which are highly sensitive to defects, on both the macro- and nanoscales, which can be detected in far-field imaging. Compared with traditional nanometrology approaches like scanning electron microscopy (SEM), atomic force microscopy (AFM), and optical scatterometry, spectral imaging offers much higher throughput due to its large field of view (FOV), high spatial resolution, and ability to be performed in-line and non-destructively. Thus, spectral imaging is an excellent choice for high speed defect detection/classification in Si nanopillar arrays and potentially other types of large-area nanostructure arrays (LNAs) fabricated on Si wafers, glass sheets, and roll-to-roll webs. The origins of different types of nanoimprint patterning defects - including particle voids, etch delay, and non-filling - and the unique ways in which they manifest as optical changes in the completed nanostructure arrays are discussed. With this understanding in mind, computer vision methods are applied to spectral image data to detect and classify various defects in a sample containing wine glass shaped Si resonator arrays.

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“…New applications in varied fields such as energy storage 1 , nanoscale photonics 2 , plasmonic nanostructures 3 , multi-bit magnetic memory 4 , terabit per square inch magnetic recording 5 , and bio-nanoparticles 6, 7 require high-throughput patterning with complex shape control at the nanoscale. Shaped nanopatterns exhibit novel optical, mechanical, and morphological properties that are exploited in various ways by these emerging fields.…”

Section: Introductionmentioning

confidence: 99%

“…We have recently demonstrated a 90% increase in ultracapacitor performance, made with J-FIL. The device is fabricated with shaped silicon nanowires having a diamond-like cross section, compared to a conventional circular cross section 1 . A further 10× increase in performance is possible with lithographic scaling to 10 nm half-pitch shaped nanowires.…”

Section: Introductionmentioning

confidence: 99%

Molecular dynamics modeling framework for overcoming nanoshape retention limits of imprint lithography

Cherala¹,

Sreenivasan²

2018

Microsyst Nanoeng

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Complex nanoshaped structures (nanoshape structures here are defined as shapes enabled by sharp corners with radius of curvature <5 nm) have been shown to enable emerging nanoscale applications in energy, electronics, optics, and medicine. This nanoshaped fabrication at high throughput is well beyond the capabilities of advanced optical lithography. While the highest-resolution e-beam processes (Gaussian beam tools with non-chemically amplified resists) can achieve <5 nm resolution, this is only available at very low throughputs. Large-area e-beam processes, needed for photomasks and imprint templates, are limited to ~18 nm half-pitch lines and spaces and ~20 nm half-pitch hole patterns. Using nanoimprint lithography, we have previously demonstrated the ability to fabricate precise diamond-like nanoshapes with ~3 nm radius corners over large areas. An exemplary shaped silicon nanowire ultracapacitor device was fabricated with these nanoshaped structures, wherein the half-pitch was 100 nm. The device significantly exceeded standard nanowire capacitor performance (by 90%) due to relative increase in surface area per unit projected area, enabled by the nanoshape. Going beyond the previous work, in this paper we explore the scaling of these nanoshaped structures to 10 nm half-pitch and below. At these scales a new “shape retention” resolution limit is observed due to polymer relaxation in imprint resists, which cannot be predicted with a linear elastic continuum model. An all-atom molecular dynamics model of the nanoshape structure was developed here to study this shape retention phenomenon and accurately predict the polymer relaxation. The atomistic framework is an essential modeling and design tool to extend the capability of imprint lithography to sub-10 nm nanoshapes. This framework has been used here to propose process refinements that maximize shape retention, and design template assist features (design for nanoshape retention) to achieve targeted nanoshapes.

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Nanoshape Imprint Lithography for Fabrication of Nanowire Ultracapacitors

Cited by 10 publications

References 24 publications

Fabrication of self-aligned multilevel nanostructures

Fabrication of self-aligned multilevel nanostructures

Spectral Imaging and Computer Vision for High-Throughput Defect Detection and Root-Cause Analysis of Silicon Nanopillar Arrays

Molecular dynamics modeling framework for overcoming nanoshape retention limits of imprint lithography

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