Nanostructure characterization of high k materials by spectroscopic ellipsometry

Pereira, L.; Águas, Hugo; Fortunato, Elvira; Martins, Rodrigo

doi:10.1016/j.apsusc.2006.06.007

Cited by 14 publications

(6 citation statements)

References 23 publications

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“…Since the nitrate group is much smaller than acetylacetonate, the resulting oxide dielectric layer will have fewer nano-pores, which should lead to lower leakage currents. This may be confirmed by thickness changes [12] and surface ellipsometric measurements [23] during UV-assisted thermal annealing. Furthermore, inorganic nitrate salts are low-cost and readily available.…”

supporting

confidence: 56%

UV‐Assisted Low Temperature Oxide Dielectric Films for TFT Applications

Hwang

Lee

Jeong

et al. 2014

Adv Materials Inter

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supporting

confidence: 56%

UV‐Assisted Low Temperature Oxide Dielectric Films for TFT Applications

Hwang

Lee

Jeong

et al. 2014

Adv Materials Inter

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“…The fitting procedure was done pursuing the minimization of the error function (χ 2 ). 27 ATR FT-IR spectroscopy characterization of thin films deposited on glass substrates was performed as described for precursor solutions.…”

Section: Methodsmentioning

confidence: 99%

Aqueous Combustion Synthesis of Aluminum Oxide Thin Films and Application as Gate Dielectric in GZTO Solution-Based TFTs

Branquinho

Salgueiro

Santos

et al. 2014

ACS Appl. Mater. Interfaces

116

105

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Solution processing has been recently considered as an option when trying to reduce the costs associated with deposition under vacuum. In this context, most of the research efforts have been centered in the development of the semiconductors processes nevertheless the development of the most suitable dielectrics for oxide based transistors is as relevant as the semiconductor layer itself. In this work we explore the solution combustion synthesis and report on a completely new and green route for the preparation of amorphous aluminum oxide thin films; introducing water as solvent. Optimized dielectric layers were obtained for a water based precursor solution with 0.1 M concentration and demonstrated high capacitance, 625 nF cm(-2) at 10 kHz, and a permittivity of 7.1. These thin films were successfully applied as gate dielectric in solution processed gallium-zinc-tin oxide (GZTO) thin film transistors (TFTs) yielding good electrical performance such as subthreshold slope of about 0.3 V dec(-1) and mobility above 1.3 cm2 V(-1) s(-1).

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“…E 0 is the peak transition energy that corresponds to the so-called Penn gap. Γ is the broadening parameter, inversely related to short-range order [17] and crystallite size [18].…”

Section: 1-backgroundmentioning

confidence: 99%

Optical absorption parameters of amorphous carbon films from Forouhi–Bloomer and Tauc–Lorentz models: a comparative study

Laidani

Bartali

Anderle

et al. 2007

J. Phys.: Condens. Matter

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Parametrization models of optical constants, namely Tauc–Lorentz (TL), Forouhi–Bloomer (FB) and modified FB models, were applied to the interband absorption of amorphous carbon films. The optical constants were determined by means of transmittance and reflectance measurements in the visible range. The studied films were prepared by rf sputtering and characterized for their chemical properties. The analytical models were also applied to other optical data published in the literature pertaining to films produced by various deposition techniques. The different approaches used to determine important physical parameters of the interband transition yielded different results. A figure-of-merit was introduced to check the applicability of the models and the results showed that FB modified for an energy dependence of the dipole matrix element adequately represents the interband transition in the amorphous carbons. Further, the modified FB model shows a relative superiority over the TL ones for concerning the determination of the band gap energy, as it is the only one to be validated by an independent, though indirect, gap measurement by x-ray photoelectron spectroscopy. Finally, the application of the modified FB model allowed us to establish some important correlations between film structure and optical absorption properties.

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Nanostructure characterization of high k materials by spectroscopic ellipsometry

Cited by 14 publications

References 23 publications

UV‐Assisted Low Temperature Oxide Dielectric Films for TFT Applications

UV‐Assisted Low Temperature Oxide Dielectric Films for TFT Applications

Aqueous Combustion Synthesis of Aluminum Oxide Thin Films and Application as Gate Dielectric in GZTO Solution-Based TFTs

Optical absorption parameters of amorphous carbon films from Forouhi–Bloomer and Tauc–Lorentz models: a comparative study

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