2005
DOI: 10.1007/s11664-005-0083-8
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Nanostructured thermoelectric materials

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Cited by 318 publications
(166 citation statements)
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“…The other two strategies are to form second phase nanoinclusions (Figure 10 (b) and (c)), where a large number of interfaces are formed between the TE materials and nanoinclusions [48] . Fig.10 Approaches for Bulk TE Nanocomposites: (a) Nanograined Composite, (b) Nanoinclusion Composite with an Incoherent Interface, and (c) Nanoinclusion Composite with a Coherent Interface [48] For example, high values of ZT, ranging from 1.6 at 300 K to 3 at 550 K for Bi-doped n-type PbSeTe/PbTe quantum-dot super lattice samples grown by molecular beam epitaxy, are reported by Harman et al [49] . Cu2Se nanocomposites show a very high ZT of above 2.1 at T ≈ 973 K, which is about 40% higher than its bulk counterpart [50] .…”
Section: Nanoscale and Nanostructured Te Materialsmentioning
confidence: 99%
“…The other two strategies are to form second phase nanoinclusions (Figure 10 (b) and (c)), where a large number of interfaces are formed between the TE materials and nanoinclusions [48] . Fig.10 Approaches for Bulk TE Nanocomposites: (a) Nanograined Composite, (b) Nanoinclusion Composite with an Incoherent Interface, and (c) Nanoinclusion Composite with a Coherent Interface [48] For example, high values of ZT, ranging from 1.6 at 300 K to 3 at 550 K for Bi-doped n-type PbSeTe/PbTe quantum-dot super lattice samples grown by molecular beam epitaxy, are reported by Harman et al [49] . Cu2Se nanocomposites show a very high ZT of above 2.1 at T ≈ 973 K, which is about 40% higher than its bulk counterpart [50] .…”
Section: Nanoscale and Nanostructured Te Materialsmentioning
confidence: 99%
“…Hence, ZT values have been limited to below 1 until Hicks and Dresselhaus [54,55] theoretically proved that low-dimensional materials could have higher ZT than their bulk analogues, due both to their lower thermal conductivity and to quantum confinement effects. The highest known ZT value (ZT =3.0 at 550 K) was achieved in Bi-doped n-type PbSeTe/PbTe quantum-dot superlattices (QDSLs) grown by molecular beam epitaxy (MBE) [56]. Han et al [2] summarized the recent progress on different kinds of thermoelectric materials in their comprehensive review and pointed out that nanostructuring was the most important strategy for enhancing ZT values, not only because nanostructuring could effectively decrease thermal conductivity, but also because it could cause an energy filtering effect that increases the Seebeck coefficient.…”
Section: Thermoelectric Conversionmentioning
confidence: 99%
“…Important results in the development of highly effective nanostructured thermoelectric materials have been published last decade; see for example the reviews (Dresselhaus et al, 2007;Minnich et al, 2009;Dmitriev & Zvyagin, 2010;Lan et al, 2010). The thermoelectric efficiency ZT = 2.4 has been reached at T = 300K in the p-type semiconductor Bi 2 Te 3 /Sb 2 Te 3 in superlattices with quantum wells (Venkatasubramanian et al, 2001); the estimation indicates that the value ZT ~ 3.5 has been received at T = 575 K in nanostructured n-type PbSeTe/PbTe with quantum dots (Harman et al, 2000(Harman et al, , 2005. It is possible also to include thermotunnel elements (thermal diodes) to nanostructured thermoelectrics in which there exists the electron tunneling through a narrow vacuum or air gap (Tavkhelidze et al, 2002).…”
Section: Zt T   mentioning
confidence: 99%