2013
DOI: 10.1016/j.infrared.2012.10.006
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Nanostructured vanadium oxide thin film with high TCR at room temperature for microbolometer

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Cited by 108 publications
(47 citation statements)
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“…[1][2][3][4][5][6] For VO 2 , the MIT from a high-temperature metallic phase to a low-temperature insulating phase occurs at around 68…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3][4][5][6] For VO 2 , the MIT from a high-temperature metallic phase to a low-temperature insulating phase occurs at around 68…”
Section: Introductionmentioning
confidence: 99%
“…V ANADIUM oxide (VO x ) thin films have been studied extensively due to their unique properties, among which the high temperature coefficient of resistance (TCR) is widely used in the microbolometers [1]. Considering the circuit driving capability and the required ratio of signal to noise for microbolometers, a resistivity of 0.1 to 10 · cm with a TCR >2%/K for VO x film is preferred [2].…”
Section: Introductionmentioning
confidence: 99%
“…Existing high-performance temperature-sensitive materials, such as vanadium oxide, have temperature coefficient of electrical resistance (TCR) on the order of −6% K −1 at room temperature (4). These materials derive their properties from changes of their crystal structure during semiconductor to metal transitions (5).…”
mentioning
confidence: 99%