“…Bismuth sulfide (Bi 2 S 3 ) is a direct band gap semiconductor with large absorption coefficient, high band gap energy (1.3-1.7 eV) [1], and having energy conversion efficiency close to theoretical maximum attainable value. These qualities make Bi 2 S 3 potentially suitable for the fabrication of optoelectronic and thermoelectric devices as well as applications in photovoltaic thermoelectric transport, photoconductivity, electrical photoresponse, and field emission [2][3][4][5][6][7]. Nanostructures of Bi 2 S 3 , especially the one-dimensional (1D) nanostructures (such as wires, rods, tubes, and ribbons), are in fact considered to be the best contenders for these applications due to quantum confinement effect [8,9].…”