Bismuth ammonium citrate complex (C24H20Bi4O28 x 6NH3 x 10H2O) interacted with sodium sulphide (Na2S) in presence of beta-cyclodextrin (beta-CD) yielding Bi2S3 nanospheres. Solvothermal treatment of the bismuth complex and dimethyl sulphoxide (DMSO) produced Bi2S3 nanorods. Reaction conditions were optimized to investigate the morphology evolution of the product. Electrical properties of the nanorods were monitored in details.

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We report our numerical study on the device performance of an asymmetric polycrystalline silicon (poly-Si) gate fin-shaped field effect transistor (FinFET) and FinFET with TiN metal gate structure. Our numerical simulation revealed that the asymmetric poly-Si FinFET structures and TiN gate FinFET structures exhibits a superior V T tolerance to the conventional FinFET structure with respect to the variation of fin thickness. For instance, the V T tolerance of the asymmetric poly-Si FinFET were 0.02 V while TiN gate FinFET exhibited 0.015 V tolerance for the variation of the fin thickness of 5 nm (from 30 to 35 nm) while the conventional FinFET demonstrates 0.12 V fluctuation for the same variation of the fin thickness. Our numerical simulation revealed that threshold voltage (V T ) can be controlled within À0:1 to þ0:5 V by the varying of doping concentration of the asymmetric poly-Si gate region from 1:0 Â 10 18 to 1:0 Â 10 20 cm À3 .

We report our numerical study on the device performance of an asymmetric poly-silicon gate FinFET and FinFET with TiN metal gate structure. Our numerical simulation revealed that the asymmetric poly-silicon FinFET structure and TiN gate FinFET structures exhibit superior V T tolerance over the conventional FinFET structure with respect to the variation of fin thickness. For instance, the V T tolerance of the asymmetric poly-Si FinFET were 0.02 V while TiN gate FinFET exhibited 0.015 V tolerance for the variation of the fin thickness of 5 nm (from 30 to 35 nm) while the conventional FinFET demonstrates 0.12 V fluctuation for the same variation of the fin thickness. Our numerical simulation further revealed that the threshold voltage (V T ) can be controlled within the range of −0.1 ∼ +0.5 V through varying the doping concentration of the asymmetric poly-silicon gate region from 1.0 × 10 18 to 1.0 × 10 20 cm −3 .

We discuss the issue of boron diffusion in biaxial tensile strained {001} Si and SiGe layer with kinetic Monte Carlo (KMC) method. We created strain in silicon by artificially adding a germanium mole fraction to the silicon in order to perform a theoretical analysis. The strain energy of the charged defects was calculated from ab initio calculation whereas the diffusivity of boron was extracted from the Arrhenius formula. Hereby, the influence of the germanium content on the diffusivity of the impurity atom was estimated. Our KMC study revealed that the diffusion of the boron atoms was retarded with increasing germanium mole fraction in the strained silicon layer. Furthermore, we derived the functional dependence of the in-plane strain as well as the out-of-plane strain as a function of the germanium mole fraction, which is based on the distribution of equivalent stress along the Si/SiGe interface.