Nanostructuring Ferroelectrics via Focused Ion Beam Methodologies

Burns, Stuart R.; Gregg, J. M.; Valanoor, Nagarajan

doi:10.1002/adfm.201603812

Cited by 25 publications

(18 citation statements)

References 162 publications

(214 reference statements)

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“…However, MBE presents several disadvantages for the epitaxial growth of ternary and quaternary metal oxide nanostructures . Developing such epitaxial oxide nanostructures with controllable shapes and morphologies requires top‐down approaches, consisting of expensive lithography or sophisticated and tedious electron and ion beam lithography …”

Section: Preparation Of Epitaxial Heterostructures and Their Microstrmentioning

confidence: 99%

Electric and Mechanical Switching of Ferroelectric and Resistive States in Semiconducting BaTiO_3–_δ Films on Silicon

Gómez

Vila-Fungueiriño

Moalla

et al. 2017

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Materials that can couple electrical and mechanical properties constitute a key element of smart actuators, energy harvesters, or many sensing devices. Within this class, functional oxides display specific mesoscale responses which often result in great sensitivity to small external stimuli. Here, a novel combination of molecular beam epitaxy and a water-based chemical-solution method is used for the design of mechanically controlled multilevel device integrated on silicon. In particular, the possibility of adding extra functionalities to a ferroelectric oxide heterostructure by n-doping and nanostructuring a BaTiO thin film on Si(001) is explored. It is found that the ferroelectric polarization can be reversed, and resistive switching can be measured, upon a mechanical load in epitaxial BaTiO /La Sr MnO /SrTiO /Si columnar nanostructures. A flexoelectric effect is found, stemming from substantial strain gradients that can be created with moderate loads. Simultaneously, mechanical effects on the local conductivity can be used to modulate a nonvolatile resistive state of the BaTiO heterostructure. As a result, three different configurations of the system become accessible on top of the usual voltage reversal of polarization and resistive states.

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Section: Preparation Of Epitaxial Heterostructures and Their Microstrmentioning

confidence: 99%

Electric and Mechanical Switching of Ferroelectric and Resistive States in Semiconducting BaTiO_3–_δ Films on Silicon

Gómez

Vila-Fungueiriño

Moalla

et al. 2017

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“…In ferroelectric samples, tomography investigations have typically been achieved by carefully polishing relaxor ferroelectric ceramic samples, 35 repeated surface chemical etching of bulk Pb(Zr,Ti)O 3 , 36 or via non-destructive confocal Raman microscopy of both periodically poled as well as more complex dendritic electrically-induced domains in LiNbO 3 . 37,38 In this context, AFM-based machining provides an alternative low-cost option to both fabricate nanostructures as well as undertake tomographic functional investigations, while avoiding problems related to ion-injection from FIB, 39 mask limitations (where the nanostructure is limited by the shape and dimensions of the mask) with mask-assisted bottom-up approaches 14 and low resolution (~ 1 µm) of confocal Raman microscopy. 18 The AFM setup also enables data to be collected in-situ during the machining process, thereby providing insight into the mechanical as well as functional properties, such as the conductivity, of the material.…”

Section: Introductionmentioning

confidence: 99%

Investigation of AFM-based machining of ferroelectric thin films at the nanoscale

Zhang

Edwards

Deng

et al. 2020

Journal of Applied Physics

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Atomic force microscopy (AFM) has been utilised for nanomechanical machining of various materials including polymers, metals, and semiconductors. Despite being important candidate materials for a wide range of applications including data storage and actuators, ferroelectric materials have rarely been machined via AFM. AFM-based machining of ferroelectric nanostructures offers advantages over established techniques, such as bottom-up approaches and focussed ion beam milling, in select cases where low damage and low-cost modification of alreadyfabricated thin films are required. Through a systematic investigation of a broad range of AFM parameters, we demonstrate that AFM-based machining provides a low-cost option to rapidly modify local regions of the film, as well as fabricate a range of different nanostructures, including a nanocapacitor array with individually addressable ferroelectric elements.

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“…Ex‐situ techniques offer an alternative method. Global ion bombardment can modify ferroelectric properties with good depth resolution, while focused ion beam (FIB) methods use high‐energy ions to study and manipulate specimens with nanoscale lateral resolution . While conventionally used to mill material at high doses for investigation of size effects in ferroelectric thin films, the FIB technique for ferromagnetic materials has been used in the low‐dose range to successfully engineer coercivity as a means to control domain wall motion …”

Section: Introductionmentioning

confidence: 99%

Nanoscale Defect Engineering and the Resulting Effects on Domain Wall Dynamics in Ferroelectric Thin Films

McGilly

Sandu

Feigl

et al. 2017

Adv Funct Materials

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Defect engineering is one of the cornerstones of the modern electronics industry. Almost all electronic devices include materials that have been doped by ion bombardment. For materials where crystallinity is essential, such as ferroelectrics, defect type and concentration can vastly influence properties and are often used to optimize device performance. This study shows a method to effectively control the density and position on the nanoscale of defect sites in thin films of Pb(Zr,Ti)O3 via focused ion beam microscopy. This allows for exceptional clarity of observation of the role of defects in nucleation, polarization switching, and domain wall interaction through investigation with piezoresponse force microscopy and transmission electron microscopy, adding insight to accepted but seldom‐demonstrated facts on defect‐induced effects. This nanoscale defect engineering can be used as a tool to control material properties, and furthermore, a route is demonstrated toward a practical application.

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Nanostructuring Ferroelectrics via Focused Ion Beam Methodologies

Cited by 25 publications

References 162 publications

Electric and Mechanical Switching of Ferroelectric and Resistive States in Semiconducting BaTiO_3–_δ Films on Silicon

Electric and Mechanical Switching of Ferroelectric and Resistive States in Semiconducting BaTiO_3–_δ Films on Silicon

Investigation of AFM-based machining of ferroelectric thin films at the nanoscale

Nanoscale Defect Engineering and the Resulting Effects on Domain Wall Dynamics in Ferroelectric Thin Films

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Nanostructuring Ferroelectrics via Focused Ion Beam Methodologies

Cited by 25 publications

References 162 publications

Electric and Mechanical Switching of Ferroelectric and Resistive States in Semiconducting BaTiO3–δ Films on Silicon

Electric and Mechanical Switching of Ferroelectric and Resistive States in Semiconducting BaTiO3–δ Films on Silicon

Investigation of AFM-based machining of ferroelectric thin films at the nanoscale

Nanoscale Defect Engineering and the Resulting Effects on Domain Wall Dynamics in Ferroelectric Thin Films

Contact Info

Product

Resources

About

Electric and Mechanical Switching of Ferroelectric and Resistive States in Semiconducting BaTiO_3–_δ Films on Silicon

Electric and Mechanical Switching of Ferroelectric and Resistive States in Semiconducting BaTiO_3–_δ Films on Silicon