2002
DOI: 10.1063/1.1428807
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Nanowires of four epitaxial hexagonal silicides grown on Si(001)

Abstract: Epitaxial self-assembled silicide nanowires can be grown on Si (001) if the magnitude of the lattice mismatch between epilayer and substrate is large along one crystal axis and small along the perpendicular axis. This phenomenon is illustrated with four examples: ScSi2, ErSi2, DySi2, and GdSi2, which have lattice mismatches of −4.6%, 6.3%, 7.6%, and 8.9%, respectively, along one of the Si 〈110〉 directions and mismatches of 0.8%, −1.6%, −0.1%, and 0.8%, respectively, along the perpendicular Si〈110〉 direction. T… Show more

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Cited by 201 publications
(157 citation statements)
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“…On Si(001), nanowires have been reported for rare earth adatoms, e.g. Gd [27,28], which are believed to form silicide structures that are in fact rather large concerning their diameter. Self-organized formation of silicide nanowires on Si(001) can also be induced, as shown by Preinesberger et al [29].…”
Section: Systems On the Ge(001) Surfacementioning
confidence: 99%
“…On Si(001), nanowires have been reported for rare earth adatoms, e.g. Gd [27,28], which are believed to form silicide structures that are in fact rather large concerning their diameter. Self-organized formation of silicide nanowires on Si(001) can also be induced, as shown by Preinesberger et al [29].…”
Section: Systems On the Ge(001) Surfacementioning
confidence: 99%
“…In this respect, RE metal silicides with a hexagonal AlB 2 bulk structure are of particular interest, because they offer tunable Schottky contact resistances [13] and they can grow as long but extremely thin nanowires on (100)-oriented or vicinal (111)-oriented Si substrates [14][15][16][17]. These concepts of strainor step-mediated growth are highly tempting since lithographic problems and limitations are entirely circumvented and, moreover, the metallic wires serve as important model systems to understand the effects of electronic correlation and instabilities characteristic for one-dimensional (1D) physics [4,18].…”
Section: Introductionmentioning
confidence: 99%
“…The image and cross-sectional line profile can be rationalized by considering the epitaxial relationship between the hexagonal AlB 2 -type structure ( Fig. 2A) of the bulk silicide and the Si(001) substrate, as observed for the rareearth silicide wires (9)(10)(11)(12)(13). In this scenario, the AlB 2 -type structure grows in the (1100) plane orientation with its [1120] direction aligned parallel to one of the < 110 > axes of the Si(001) substrate (Fig.…”
mentioning
confidence: 99%