Narrow-linewidth 1.5μm quantum dot distributed feedback lasers

Becker, Annette; Sichkovskyi, Vitalii; Bjelica, Marko; Eyal, Ori; Baum, P.; Rippien, Anna; Schnabel, Florian; Witzigmann, Bernd; Eisenstein, G.; Reithmaier, Johann Peter

doi:10.1117/12.2209088

Cited by 7 publications

(5 citation statements)

References 9 publications

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“…Approaches to achieve this end range from semiconductor distributed feedback lasers (DFB) [12][13][14][15] and distributed Bragg reflector (DBR) lasers [16][17][18][19][20], to fiber-based ring lasers [1,[21][22][23][24][25][26]. While these single frequency devices may produce high power and a low linewidth, unfortunately, their tunability is typically low, on the order of a few nanometers.…”

Section: Introductionmentioning

confidence: 99%

Widely Tunable, Low Linewidth, and High Power Laser Source using an Electro-Optic Comb and Injection-Locked Slave Laser Array

Skehan¹,

Naveau²,

Schröder³

et al. 2021

Preprint

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We propose a simple approach to implement a tunable, high power and narrow linewidth laser source based on a series of highly coherent tones from an electro-optic frequency comb and a set of 3 DFB slave lasers. We experimentally demonstrate approximately 1.25 THz (10 nm) of tuning within the C-Band centered at 192.9 THz (1555 nm). The output power is approximately 100 mW (20 dBm), with a side band suppression ratio greater than 55 dB, and a linewidth below 400 Hz across the full range of tunability. This approach is scalable and may be extended to cover a significantly broader optical spectral range.

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Section: Introductionmentioning

confidence: 99%

Widely Tunable, Low Linewidth, and High Power Laser Source using an Electro-Optic Comb and Injection-Locked Slave Laser Array

Skehan¹,

Naveau²,

Schröder³

et al. 2021

Preprint

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“…For QD lasers, these properties include but are not limited to a low threshold current density, 1, 2 large gain bandwidth, 3 a high temperature stability, 4 and a reduced phase noise 5 transforming into a natural spectral linewidth as low as 110 kHz. 6 The latter can even be much further reduced by using a proper external cavity (EC). 7 It has been also widely shown that QD lasers do also have a great potential towards large-scale and low-cost photonic integration by overcoming inherent problems related to standard diode lasers integrated on silicon.…”

Section: Introductionmentioning

confidence: 99%

Systematic investigation of the influencing parameters of an external cavity laser with a quantum dot gain chip

Ehlert

Mugnier

et al. 2020

Semiconductor Lasers and Laser Dynamics IX

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External cavity lasers show a variety of uses, for which quantum well semiconductor lasers are already commercially used. Due to the atom-like discrete energy levels, quantum dots exhibit various properties resulting from the three-dimensional confinement of carriers, like high stability against temperature variation, large gain bandwidth, and low-threshold lasing operation. Quantum dots seem to be ideal to address the challenges in the further development of various semiconductor applications, such as high-resolution spectroscopy or broadband optical communication networks, for which a range of spectral and temporal characteristics is required, for instance a narrow spectral linewidth, low intensity noise or wide wavelength tunability. In this view, external cavity quantum dot gain chips can be envisoned to replace the current quantum well technology. Using a semi-analytical rate equation model, we successfully analyze both dynamical and noise properties of an external cavity laser made with quantum dot gain medium, operating under strong optical feedback. This paper investigates the turn-on delay, the relative intensity noise, and the frequency noise and compares them to the case without optical feedback. These numerical investigations of an external cavity quantum dot gain chip provide meaningful building blocks for future fabrication research or for developing high performance device such as wavelength-selective components.

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“…Additionally, the increase in traffic in datacenters and access networks, including wireless links, is higher than in other networks. Therefore, to establish such ultra-fast and high-capacity photonic networks, compact and highly functional photonic integrated circuits such as those in monolithic [2][3][4][5][6][7][8] or heterogeneous [9][10][11][12][13][14][15][16][17] devices are desired. Moreover, characteristics such as low-cost, low-energy consumption and high-temperature stability are essential if the devices are to be integrated with large-scale integrated circuits (LSIs) and other electronic devices.…”

Section: Introductionmentioning

confidence: 99%

Extremely stable temperature characteristics of 1550-nm band, p-doped, highly stacked quantum-dot laser diodes

Matsumoto

Akahane

Umezawa

et al. 2017

Jpn. J. Appl. Phys.

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We fabricated 1.55-µm band, broad-area, p-doped, 30-layer stacked quantum-dot (QD) laser diodes (LDs) grown on an InP(311)B substrate via a delta-doping method employing a strain compensation technique. We doped Be atoms to a depth of 5 nm from the bottom of each QD layer. The concentration of Be atoms doped in the InGaAlAs spacer layer was 1 × 1018 cm−3. We observed a strong photoluminescence emission and a relatively coherent surface of QDs using atomic force microscopy. In addition, we observed that the fabricated QD-LDs had extremely stable temperature characteristics, and a characteristic temperature T0 of more than 2156 K was obtained.

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Narrow-linewidth 1.5μm quantum dot distributed feedback lasers

Cited by 7 publications

References 9 publications

Widely Tunable, Low Linewidth, and High Power Laser Source using an Electro-Optic Comb and Injection-Locked Slave Laser Array

Widely Tunable, Low Linewidth, and High Power Laser Source using an Electro-Optic Comb and Injection-Locked Slave Laser Array

Systematic investigation of the influencing parameters of an external cavity laser with a quantum dot gain chip

Extremely stable temperature characteristics of 1550-nm band, p-doped, highly stacked quantum-dot laser diodes

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