Narrow Linewidth Surface-Etched DBR Lasers: Fundamental Design Aspects and Applications

Zimmerman, Joseph W.; Price, R.K.; Reddy, U. K.; Dias, N. L.; Coleman, J. J.

doi:10.1109/jstqe.2013.2260731

Cited by 24 publications

(7 citation statements)

References 40 publications

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“…Nevertheless, fabrication of the surface gratings is challenging, as high-aspect ratio (HAR) structures pose a challenge for etching, for instance. 8 In this work, gratings were defined by electron-beam lithography (EBL), and then manufactured by using inductively coupled plasma reactive ion etching system (ICP-RIE). SEM image of the realized gratings in presented in Figure 2.…”

Section: Fabrication Of the Dbr Lasersmentioning

confidence: 99%

Fabrication of 780 nm DBR laser diodes for quantum applications

Ulkuniemi

Kuusela

Aho

et al. 2023

Photonics for Quantum 2023

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Lasers have multiple applications in the field of quantum. A few examples are cooling and repumping lasers for atoms and ions used in constructing qubits, frequency combs and atomic clocks. The performance required from a laser solution varies between the applications, however, single-mode operation, narrow spectral linewidth, and extreme frequency stability over operation lifetime are demanded for any of the applications. Use of semiconductor laser diode as a laser source offers multiple advantages, such as tunability by current and temperature, small size, and low energy consumption.Narrow spectral linewidths from semiconductor lasers can be achieved by the means of external cavities, or monolithic approaches such as distributed Bragg reflector (DBR) and distributed feedback (DFB) lasers. The selection of the most suitable solution depends on the required output power, linewidth, and mode-hop free tuning range requirements. The use of monolithic on-chip gratings for wavelength stabilization decreases system complexity and increases overall rigidity compared to external cavity solutions.In this work, we present device-level results for our 780 nm DBR laser design and compare them to the simulations. The 780 nm wavelength range is of particular interest for quantum computing due to the Rb atom D2 line. For optimization purposes, devices with varied grating designs, ridge geometries and gain area lengths were fabricated and measured. Future improvements related to device processing, design, and extending to other wavelengths are discussed.

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Section: Fabrication Of the Dbr Lasersmentioning

confidence: 99%

Fabrication of 780 nm DBR laser diodes for quantum applications

Ulkuniemi

Kuusela

Aho

et al. 2023

Photonics for Quantum 2023

View full text Add to dashboard Cite

show abstract

“…The intrinsic linewidth of semiconductor diode lasers is limited by the spontaneous emission which induces phase and intensity fluctuations [10]. Linewidths as low as 25 kHz have been reported from surface grating DBR lasers [17]. The linewidth can be narrowed to an extent by linewidth narrowing techniques such as locking to an external cavity.…”

Section: Distributed Bragg Reflector (Dbr) Lasersmentioning

confidence: 99%

Narrow linewidth laser system based on semiconductor lasers

Nechay

Kuusela

Ulkuniemi

et al. 2023

Photonics for Quantum 2023

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Quantum technologies such as quantum information processing, quantum metrology and sensing rely on single-frequency, low-noise lasers in their core operations. Further development, scalability and commercialization of quantum technologies will be heavily dependent on the availability of affordable single-frequency lasers on a variety of application-specific wavelengths. Quantum applications manifest strict requirements for laser sources in terms of central wavelength, linewidth, long-term stability, polarization extinction ratio, side-mode suppression ratio, etc.Semiconductor lasers offer numerous significant advantages for quantum technology applications. Their broad wavelength coverage is made possible through bandgap engineering of light emitting active area. Intrinsic versatility of semiconductor lasers' emission coupled with frequency control, which is implemented either through monolithic on-chip gratings such as in distributed Bragg reflector (DBR) and distributed feedback lasers (DFB), or external cavity optical elements, makes semiconductor lasers a very promising laser platform to address the acute need for small-size, mass-produced singlefrequency lasers.Modulight presents the development and characterization results of two narrow-linewidth laser systems incorporating a combination of in-house manufactured single-frequency lasers and internally developed low-noise driving electronics. The first laser system is designed for two-wavelength operation at cooling and repumping frequencies of Rb 87 D2 line utilizing near-IR 780.24 nm DBR lasers. Another system example includes frequency-doubled semiconductor laser in the green part of spectrum at 553 nm for Ba photoionization in trapped ion computing applications. Demonstrated exemplar platforms are viable and cost-effective tailorable alternatives to bulky and expensive Ti:Sapphire and legacy dye lasers, thus facilitating the advancement of quantum industry into real-world applications.

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“…Approaches to achieve this end range from semiconductor distributed feedback lasers (DFB) [12][13][14][15] and distributed Bragg reflector (DBR) lasers [16][17][18][19][20], to fiber-based ring lasers [1,[21][22][23][24][25][26]. While these single frequency devices may produce high power and a low linewidth, unfortunately, their tunability is typically low, on the order of a few nanometers.…”

Section: Introductionmentioning

confidence: 99%

Widely Tunable, Low Linewidth, and High Power Laser Source using an Electro-Optic Comb and Injection-Locked Slave Laser Array

Skehan¹,

Naveau²,

Schröder³

et al. 2021

Preprint

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We propose a simple approach to implement a tunable, high power and narrow linewidth laser source based on a series of highly coherent tones from an electro-optic frequency comb and a set of 3 DFB slave lasers. We experimentally demonstrate approximately 1.25 THz (10 nm) of tuning within the C-Band centered at 192.9 THz (1555 nm). The output power is approximately 100 mW (20 dBm), with a side band suppression ratio greater than 55 dB, and a linewidth below 400 Hz across the full range of tunability. This approach is scalable and may be extended to cover a significantly broader optical spectral range.

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Narrow Linewidth Surface-Etched DBR Lasers: Fundamental Design Aspects and Applications

Cited by 24 publications

References 40 publications

Fabrication of 780 nm DBR laser diodes for quantum applications

Fabrication of 780 nm DBR laser diodes for quantum applications

Narrow linewidth laser system based on semiconductor lasers

Widely Tunable, Low Linewidth, and High Power Laser Source using an Electro-Optic Comb and Injection-Locked Slave Laser Array

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