Native defects in antiferromagnetic topological insulator 
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Huang, Zengle; Du, Mao; Yan, Jiaqiang; Wu, Weida

doi:10.1103/physrevmaterials.4.121202

Cited by 54 publications

(52 citation statements)

References 50 publications

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“…The antisite concentration x is easily estimated by the magnetization jump between low-and highfield plateaus, x ≈ 0.04 (see Fig. 1 and Table III), which is consistent with the scanning tunneling microscopy (STM) result [12]. Using these initial estimates, CMC simulations were performed using the UPPASD atomic spin dynamics package [16].…”

Section: Analysis Of Magnetization Data For Mbtsupporting

confidence: 72%

Defect-driven ferrimagnetism and hidden magnetization in MnBi2Te4

Lai

Yan

et al. 2021

Phys. Rev. B

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MnBi 2 Te 4 (MBT) materials are promising antiferromagnetic topological insulators in which field-driven ferromagnetism is predicted to cause a transition between axion insulator and Weyl semimetallic states. However, the presence of antiferromagnetic coupling between Mn/Bi antisite defects and the main Mn layer can reduce the low-field magnetization, and it has been shown that such defects are more prevalent in the structurally identical magnetic insulator MnSb 2 Te 4 (MST). We use high-field magnetization measurements to show that the magnetization of MBT and MST occur in stages and full saturation requires fields of ∼60 T. As a consequence, the low-field magnetization plateau state in MBT, where many determinations of the quantum anomalous Hall state are studied, actually consists of ferrimagnetic septuple blocks containing both uniform and staggered magnetization components.

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Section: Analysis Of Magnetization Data For Mbtsupporting

confidence: 72%

Defect-driven ferrimagnetism and hidden magnetization in MnBi2Te4

Lai

Yan

et al. 2021

Phys. Rev. B

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“…The charge carrier concentration of some selected batches is listed in Table I. Unlike the atomically flat surfaces seen in previous STM reports on our flux grown crystals [10,16,17], the surface here is covered with adatoms of height 60-80 pm as inferred from Fig. 4(b).…”

Section: Latermentioning

confidence: 67%

“…The nonstoichiometry of Te and the site mixing between Bi and Te should also be considered depending on the growth conditions. These are confirmed by the experimental observation of lattice defects via single crystal x-ray and neutron diffraction, scanning tunneling microscopy(STM), scanning transmission electron microscopy(STEM) [10][11][12][13][14][15][16][17][18][19][20]. We noticed in our flux-grown MnBi 2 Te 4 crystals, while the concentration of Mn Bi (Mn at Bi site) is in the range of 2-4% in crystals from different batches, the concentration of Bi M n (Bi at Mn site) can vary in a wide range 4-15% which is rather sensitive to growth parameters.…”

Section: Introductionmentioning

confidence: 83%

“…These lattice defects induce electronic inhomogeneities, a complex ferrimagnetism in each septuple layer, and can affect and even change the sign of inter-septuple-layer magnetic interactions. [15][16][17]21] Recently, lattice disorder in MnBi 2 Te 4 was proposed to account for the experimentally observed high Chern number state in MnBi 2 Te 4 flakes [22] and affect the gap size of the surface states [18][19][20]. Careful investigations on MnTe.mBi 2 Te 3 with m >1 found the above mentioned lattice defects in both the quintuple and septuple layers, which lead to diverse magnetic ground states [6,23].…”

Section: Introductionmentioning

confidence: 99%

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Vapor transport growth of MnBi2Te4 and related compounds

Yan,

Huang,

et al. 2021

Preprint

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Motivated by fine tuning of the magnetic and topological properties of MnBi2Te4 via defect engineering, in this work, we report the crystal growth of MnBi2Te4 and related compounds using vapor transport method and crystal characterization by measuring elemental ratio, magnetic and transport properties, and scanning tunneling microscopy. For the growth of MnBi2Te4 single crystals, I2, MnI2 , MnCl2, TeCl4, and MoCl5 are all effective transport agents; chemical transportation occurs faster in the presence of iodides than chlorides. MnBi2Te4 crystals can be obtained in the temperature range 500 • C-590 • C using I2 as the transport agent. We further successfully grow MnSb2Te4, MnBi2−xSbxTe4, and Sb-doped MnBi4Te7 crystals. A small temperature gradient <20 • C between the hot and cold ends of the growth cmpoule is critical for the successful crystal growth of MnBi2Te4 and related compounds. Compared to flux grown crystals, vapor transported crystals tend to be Mn stoichiometric, and Sb-bearing compositions have more Mn/Sb site mixing. The vapor transport growth provides a new materials synthesis approach to fine tuning the magnetic and topological properties of these intrinsic magnetic topological insulators.

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“…The random distribution of Mn Bi and Bi M n antisites results in spatial fluctuation of the local density of states (LDOS) near the Fermi level [13]. Scanning tunneling spectroscopy (STS) found clustering of Mn Bi antisites significantly suppresses LDOS at the conduction band edge, and Bi M n possesses a localized electronic state 80 meV below E F contributing to a pronounced peak in the LDOS.…”

Section: Current Statusmentioning

confidence: 99%