Native Point Defects and Doping in ZnO

Janotti, Anderson; Walle, Chris G. Van de

doi:10.1002/9781119991038.ch5

Cited by 4 publications

(2 citation statements)

References 122 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As a result, it has been extensively viable for a wide range of applications in semiconductor device technology, such as photovoltaics, gas and bio-sensors, transistors, lasers, and other cutting-edge optoelectronic devices [3][4][5]. However, ZnO is prone to non-radiative recombination defects, which limit its effectiveness and performance as an optoelectronic device [6,7]. Eliminating these surface defects is crucial to enhance and optimize its structural and optical properties, which can result in highly performing ZnO-based optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

The effects of nontoxic bio-based substances (egg white) on the performance and passivation of ZnO nanorods arrays-based light emitting devices

Chuang,

Feria,

et al. 2024

Nanotechnology

View full text Add to dashboard Cite

An innovative approach is proposed to passivate the existing defects from metal oxide semiconductors by functionalizing nontoxic bio-based substances. As a demonstration, we synthesized zinc oxide nanorods (ZnO NRs) using a hydrothermal method and incorporated chicken egg white (albumen) as a passivator to the defects. XRD analysis of ZnO NRs shows enhanced quality and crystallinity features after incorporating albumen. XPS measurements were performed not only to introduce the chemical bonding between the albumen and the bare ZnO NRs but also specifically provide evidence of successful capping and defect passivation to the surface layer of ZnO NRs. It was observed that when the albumen was annealed, it formed sulfhydryl groups and disulfide bonds (which created disulfide bridges) from the chemical reaction in irreversible thermal denaturation. Steady-state photoluminescence of ZnO NRs showed two emission bands, i.e., near band-edge emission (NBE) and deep-level emission (DL). The NBE is significantly improved as compared to DL emission after capping and annealing the albumen, while the quenching of DL emission confirmed the reduced defects arising from the surface of ZnO NRs. The advantages and enhanced characteristics of the albumen-capped ZnO NRs led to fabricating a stable and highly efficient light-emitting device. This work opens the great potential of utilizing nontoxic and low-cost biomaterials in passivating the defects of metal oxide nanomaterials for the development of bio-inspired and stable optoelectronic devices.

show abstract

Section: Introductionmentioning

confidence: 99%

“…Defect passivation is a critical technique for improving the efficiency and stability of semiconductor materials, like ZnO, that contain a high concentration of electronically active charged point defects [6,8,9]. The optoelectronic characteristics of nanomaterials are significantly influenced by confinement and surface defects.…”

Section: Introductionmentioning

confidence: 99%