Nature of luminescence transition in low-resistivity n-type ZnS single crystals

Abdel-Kader, A.; Farag, Hamed

doi:10.1007/bf01111892

Cited by 7 publications

(6 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The SA band, in our case peaking at about 2.65 eV at 77 K, has the spectroscopic parameters and characteristic properties such as peak energy, spectral half width as well as a shift positively following the sample temperature, etc. the same as those in the literature [7,8]. When the samples are excited by 333 nm the IB band appears obviously at liquid nitrogen or lower temperature.…”

Section: Resultssupporting

confidence: 71%

“…Aluminium is an important coactivator when codoping with the activators such as Ag or Cu [4,5]. Moreover, in ZnS crystal Al can act as a donor and as a component in the aluminium-zinc vacancy (VZn) complex, which is responsible for the very well-known emission being the socalled SA band [6][7][8]. Depending on the impurities and lattice damage states of ZnS crystals there exist some luminescence bands at high energy side of the usual SA.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Identification of the IB Emission Band in Al-Doped ZnS Crystals

Liem¹,

Quang²,

Thanh³

1996

Acta Phys. Pol. A

View full text Add to dashboard Cite

Section: Resultssupporting

confidence: 71%

Section: Introductionmentioning

confidence: 99%

Identification of the IB Emission Band in Al-Doped ZnS Crystals

Liem¹,

Quang²,

Thanh³

1996

Acta Phys. Pol. A

View full text Add to dashboard Cite

“…3, curve 1) is made by the Al-based luminescence centers responsible for the bands at 380-390 nm [18], 435 nm [19], and 460 nm [17].…”

Section: Gion (G-cu Center) Cu Znmentioning

confidence: 99%

Photoluminescence of ZnS:Cu crystals at various concentrations of copper

et al. 2005

View full text Add to dashboard Cite

535.37 Doping of ZnS crystals with background impurities and ZnS:Al crystals by various concentrations of copper from a bismuth melt has been carried out. The photoluminescence spectra of the starting ZnS crystals annealed in the bismuth melt and doped by copper have been investigated. Interpretation of the experimental results according to the model in which the associates (Cu Zn ′ Cu i • ) are responsible for the B-Cu band (+460 nm) and the donor-receptor pairs [Cu i • -(Cu Zn ′ Cu i • )] are responsible for the G-Cu band (+505 nm) is given. It is assumed that doping by copper from a bismuth melt is accompanied by the separation of a Cu x S-type phase. It has been shown that heat treatment of ZnS crystals in the Bi melt does not lead to the appearance of luminescence centers based on Bi Zn , Bi S , and Bi i .

show abstract

“…1, curve 5) is dominated by two maxima (445 and 530 nm) of almost equal intensity. This could be caused by zinc and sulfur vacancies and Bi [11][12][13][14].…”

mentioning

confidence: 99%

Impurity-Defect States Reorganization in ZnS under the Influence of N2-Laser Radiation

Bruk

Ketrush

Korotkov

et al. 2002

phys. stat. sol. (b)

View full text Add to dashboard Cite

The results of PL investigations of low resistivity (r ¼ 10 W cm) ZnS : Al crystals annealed in Bi þ BiCl 3 melt for 100 h at 1250 K are presented. The influence of laser radiation annealing (nitrogen laser, P ¼ 1.5 kW, l ¼ 337.1 nm, t ¼ 10 ns) and heating up to 520 K on PL spectra was studied both from the crystal subsurface and from its volume in the temperature range of 80-520 K. Volume and subsurface spectra were measured from different regions of the cleaved sample surface (normal to two parallel surfaces contacted with the melt). In the PL spectra from ZnS volume radiation bands at 426 nm related to (Cl S ) and 496 nm related to (V Zn 00 Cl S . ) were observed. It was supposed that zinc is diffusing from the crystal volume to the Bi melt, increasing the probability of (V Zn 00 Al Zn . ) --complex formation. In the subsurface layer (%500 mm) Bi . (l max ¼ 530 nm), V S . and their compensating charge states V Zn could exist. One can suppose that point defect interaction is based on the formation of complexes owing to the diffusion process. They also form complexes owing to quasi-chemical reaction. A destruction of the complexes was observed at T % 400 K. As the temperature increases up to 520 K, the intensity of the PL at the subsurface sharply decreases. X-ray investigations under high angles have shown the presence of precipitates of Bi 2 S 3 and BiS 2 chemical compounds. It is shown that as a result of ZnS : Al : Bi crystal laser illumination and low temperature heating (up to %520 K) in the subsurface layer impurity defect state (IDS) reorganization and new (Bi 2 S 3 ; BiS 2 ) phase formation occur, which indicates the possible existence of impurity-defect complexes in the different sites of the host crystal. The main mechanisms of IDS change are center recharging and their motion on dislocations under the conditions close to the fluidity limit of the crystal.

show abstract

Nature of luminescence transition in low-resistivity n-type ZnS single crystals

Cited by 7 publications

References 13 publications

Identification of the IB Emission Band in Al-Doped ZnS Crystals

Identification of the IB Emission Band in Al-Doped ZnS Crystals

Photoluminescence of ZnS:Cu crystals at various concentrations of copper

Impurity-Defect States Reorganization in ZnS under the Influence of N2-Laser Radiation

Contact Info

Product

Resources

About