Nature of the Josephson barrier in electron-beam-written<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">YBa</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Cu</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:m

Hinaus, B. M.; Rzchowski, M. S.; Davidson, B. A.; Nordman, J.E.; Siangchaew, K.; Libera, Matthew

doi:10.1103/physrevb.56.10828

Cited by 8 publications

(3 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…18,19 Our devices resemble directly scribed electron beam junctions since both types of devices are interface free and operate at similar length scales. 20 Unlike the electron beam damaged devices that anneal at room temperature over a period of days or weeks, the ion beam damaged weak links show substantially greater stability at room temperature. Also, we can prepare a full wafer of junctions with a single implant which is necessary for practical manufacturing of Josephson circuits.…”

Section: Planar Thin Film Yba 2 Cu 3 O 7؊␦ Josephson Junctions Via Namentioning

confidence: 99%

Planar thin film YBa2Cu3O7−δ Josephson junctions via nanolithography and ion damage

Katz

Sun²,

Woods

et al. 1998

Applied Physics Letters

View full text Add to dashboard Cite

We have developed a process to fabricate planar high-Tc Josephson junctions using nanolithography and a 200 keV ion implanter. Conduction occurs in the ab plane and is interface free. We can systematically tune devices to operate at temperatures between 1 K and the Tc of the undamaged superconducting material by varying the length of the weak link and by changing the amount of ion damage. All of the devices showed clear dc and ac Josephson effects. Measurement of R(T) and Ic(T) of the weak links revealed trends which were consistent with a proximity effect.

show abstract

Section: Planar Thin Film Yba 2 Cu 3 O 7؊␦ Josephson Junctions Via Namentioning

confidence: 99%

Planar thin film YBa2Cu3O7−δ Josephson junctions via nanolithography and ion damage

Katz

Sun²,

Woods

et al. 1998

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…For example, it is reported that Josephson junctions on YBa 2 Cu 2 O 7Ϫ␦ can be fabricated by electron-beam writing. 1 Or, that YBa 2 Cu 2 O 7Ϫ␦ films are patterned by a procedure based on a local increase of the oxygen diffusion velocity that is increased by the heat of a focused laser beam. 2 Here, we suggest that such structures could be fabricated by the exposure of high-temperature superconductors to ultraviolet ͑UV͒ radiation.…”

mentioning

confidence: 99%

Controlled underdoping of cuprates using ultraviolet radiation

Schwaller

Berner

Greber

et al. 1999

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…This prediction, for comparison purposes only, was calculated using a measured fit by Sadleir et al [3] for the Mo/Au bilayer temperature-independent coherence length, ξ i = 738 nm, and for the local penetration depth at the Nb leads, λ r = 79 nm. This S-S -S prediction also assumes as 180 nm × 3 µm × 3 µm Mo/Au TES, and an unmodified bilayer transition temperature, T cN = 180 mK Ginzburg-Landau theory by deGennes [13] (given by equation 1 in Hinaus et al [14]). This theory is only strictly applicable near the superconducting lead T c , but has been observed to be in agreement at lower temperatures as well.…”

Section: S-n-s Theoretical Predictionsmentioning

confidence: 98%

Can the Lateral Proximity Effect Be Used to Create the Superconducting Transition of a Micron-Sized TES?

et al. 2012

View full text Add to dashboard Cite

Recent measurements of micron-sized Mo/Au bilayer TESs have demonstrated that the TES can behave like an S-S -S weak link due to the lateral proximity effect from superconducting leads. In this regime the T c is a function of bias current, and the effective T c shifts from the bilayer T c towards the lead T c . We explore the idea that a micron-sized S-N-S weak link could provide a new method to engineer the TES T c . This method would be particularly useful when small size requirements for a bilayer TES (such as for a hot-electron microbolometer) lead to undesirable shifts in the bilayer T c . We present measurements of a variety of micron-sized normal Au 'TES' devices with Nb leads. We find no evidence of a superconducting transition in the Au film of these devices, in dramatic contrast to the strong lateral proximity effect seen in micron-sized Mo/Au bilayer devices. The absence of a transition in these devices is also in disagreement with theoretical predictions for S-N-S weak links. We hypothesize that a finite contact resistance between the Nb and Au may be weakening the effect. We conclude that the use of the lateral proximity effect to create a superconducting transition will be difficult given current fabrication procedures.

show abstract

Nature of the Josephson barrier in electron-beam-writtenYBa2Cu3O

Cited by 8 publications

References 26 publications

Planar thin film YBa2Cu3O7−δ Josephson junctions via nanolithography and ion damage

Planar thin film YBa2Cu3O7−δ Josephson junctions via nanolithography and ion damage

Controlled underdoping of cuprates using ultraviolet radiation

Can the Lateral Proximity Effect Be Used to Create the Superconducting Transition of a Micron-Sized TES?

Contact Info

Product

Resources

About