Nature of the Low-Temperature<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>3</mml:mn><mml:mo>×</mml:mo><mml:mn>3</mml:mn></mml:math>Surface Phase of Pb/Ge(111)

Mascaraque, A.; Ávila, J.; Álvarez, J.; Asensio, M. C.; Ferrer, S.; Michel, E. G.

doi:10.1103/physrevlett.82.2524

Cited by 50 publications

(46 citation statements)

References 15 publications

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“…13 Its unit cell contains three Sn atoms, one of them shifted upwards from the other two. 14,15 This vertical distortion disappears gradually below ∼30 K, and a low temperature (…”

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confidence: 98%

Competing charge ordering and Mott phases in a correlated Sn/Ge(111) two-dimensional triangular lattice

et al. 2013

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We take advantage of complementary high-resolution experimental techniques and theoretical tools to get insight into the α-Sn/Ge(111) triangular lattice surface consisting of sp electrons. We report a (3 × 3) phase, characterized by a charge ordering settled by electronic correlation, which appears between the known metallic-(3 × 3) and Mott insulator phases. We identify the atomistic mechanism behind the stabilization of this phase and interpret these findings on the basis of theoretical calculations. We disentangle the role of the various degrees of freedom in the stability of the different phases found and describe the stepwise surface changes between the metallic and Mott insulating phases.

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“…13 Its unit cell contains three Sn atoms, one of them shifted upwards from the other two. 14,15 This vertical distortion disappears gradually below ∼30 K, and a low temperature (…”

Section: Introductionmentioning

confidence: 98%

Competing charge ordering and Mott phases in a correlated Sn/Ge(111) two-dimensional triangular lattice

et al. 2013

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“…In the quasi-1D systems studied so far, the width (w) of each metal band was at least four to five atoms across. However, later studies on these quasi-2D and -1D systems have called attention to the fact that more complex structural reconstruction forces unrelated to the Peierls transition may be present for all of these cases [22,23]. Indeed, detailed mapping of the Fermi surfaces [24] have revealed a behavior that does not meet the Peierls transition criterion.…”

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confidence: 99%

Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces

et al. 2016

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Existing examples of Peierls-type 1D systems on surfaces involve depositing metallic overlayers on semiconducting substrates, in particular, at step edges. Here we propose a new class of Peierls system on the ð1010Þ surface of metal-anion wurtzite semiconductors. When the anions are bonded to hydrogen or lithium atoms, we obtain rows of threefold coordinated metal atoms that act as one-atom-wide metallic structures. First-principles calculations show that the surface is metallic, and below a certain critical temperature the surface will condense to a semiconducting state. The idea of surface scaffolding is introduced in which the rows are constrained to move along simple up-down and/or sideways displacements, mirroring the paradigm envisioned in Peierls's description. We predict that this type of insulating state should be visible in the partially hydrogenated ð1010Þ surface of many wurtzite compounds. DOI: 10.1103/PhysRevLett.117.116101 The electronic, vibrational, and magnetic properties of 1D systems are central to current condensed matter physics, from Luttinger liquids to nanotubes and nanowires. Part of the driving force behind this interest is linked to unique properties that 1D systems offer, which may be exploited in nanoscaled electronic and sensing devices. Metallic chains in one dimension, however, are generally unstable and undergo a metal-insulator (MI) phase transition at low temperatures-the so-called Peierls instability [1,2]. In the classical Peierls picture, the MI transformation is driven by electronic redistribution via the opening of a band gap at the Fermi level. The Fermi surface nesting features of the original unit cell cause the electronic instability and, consequently, a reduction in total energy. The electronic redistribution of filled states near the Fermi level sets up a charge density wave (CDW) [3-6] responsible for a metal-toinsulator transition. Although the main driving force in a Peierls transition is electronic, the MI transition in real systems is always accompanied by a periodic lattice distortion resulting in a new unit cell due to the strong chargelattice coupling.CDW in low-dimensional systems deposited on substrates have been reported [7] for quasi-2D systems such as submonolayers of Pb=Sn Ge(111) [8][9][10] and In=Cuð001Þ [11], and quasi-1D systems such as bands of In=Sið111Þ [12][13][14][15][16][17], Au=Geð001Þ [18,19], and Au=Sið553Þ [20,21]. In the quasi-1D systems studied so far, the width (w) of each metal band was at least four to five atoms across. However, later studies on these quasi-2D and -1D systems have called attention to the fact that more complex structural reconstruction forces unrelated to the Peierls transition may be present for all of these cases [22,23]. Indeed, detailed mapping of the Fermi surfaces [24] have revealed a behavior that does not meet the Peierls transition criterion. Effects of atoms from deeper layers are found to be strong on the seemingly 1D systems [25][26][27]. Further, it has proven very difficult to fabricate, by direct d...

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“…The fitting parameters were spin-orbit split 1.04, branching ratio 0.65Ϯ0.03, Lorentzian width 0.175, singularity index ␣ϭ0.06. The Gaussian width of C 1 and C 2 was 0.33 eV and 0.63 eV for C 3 . C 2 -C 1 ϭ Ϫ0.45 eV and C 2 -C 3 ϭ0.47 eV.…”

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“…As determined by surface x-ray diffraction, 3,4 the transition to the 3ϫ3 phase involves vertical atomic displacements in the adatom layer which give rise to sharp 3ϫ3 low-energy electron diffraction ͑LEED͒ spots. Scanning tunneling microscopy ͑STM͒ images of these surfaces show a transition from a )ϫ) to a 3ϫ3 unit cell, which has been attributed to the formation of a commensurate charge-density wave.…”

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Electronic structure ofSn/Si(111)3
Uhrberg
¹
,
Zhang
²
,
Balasubramanian
³

et al. 2000
Phys. Rev. B
56
12
43
0
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The Sn/Si͑111͒ )ϫ) surface has been studied by photoelectron spectroscopy, low-energy electron diffraction ͑LEED͒, and scanning tunneling microscopy. Unlike Sn/Ge͑111͒, the Sn/Si͑111͒ surface shows a )ϫ) LEED pattern at low temperature also ͑70 K͒. The electronic structure, however, is inconsistent with a pure )ϫ) phase. Sn 4d spectra exhibit two major components and the valence band shows two surface bands. These features have been associated with the low-temperature 3ϫ3 phase in the case of Sn/Ge͑111͒. The similarity in the electronic structure points to stabilization of a low-temperature phase for Sn/Si͑111͒ also, but at a significantly lower temperature ͑Ͻ70 K͒.Phase transitions in low-dimensional systems have recently attracted a lot of experimental and theoretical interest. A striking example is the transition that occurs on the 1 Pb/ Ge͑111͒ and 2 Sn/Ge͑111͒ surfaces. The room-temperature )ϫ) reconstruction, with 1 3 monolayer of Pb or Sn adatoms, changes gradually to a 3ϫ3 phase when the temperature is lowered. As determined by surface x-ray diffraction, 3,4 the transition to the 3ϫ3 phase involves vertical atomic displacements in the adatom layer which give rise to sharp 3ϫ3 low-energy electron diffraction ͑LEED͒ spots. Scanning tunneling microscopy ͑STM͒ images of these surfaces show a transition from a )ϫ) to a 3ϫ3 unit cell, which has been attributed to the formation of a commensurate charge-density wave.1,2 Other electronic structure studies, concentrated on the Sn/Ge͑111͒ system, have been done by photoelectron spectroscopy.5-7 An interesting and rather puzzling result is that the electronic structures of the )ϫ) and 3ϫ3 surfaces are qualitatively quite similar. The two major Sn 4d components and the two surface-state bands that are observed find a natural explanation in a 3ϫ3 surface phase but are not directly accounted for in a )ϫ) periodicity.Although the Pb/Si͑111͒ and Sn/Si͑111͒ systems can be expected to behave in a similar way to their Ge͑111͒ counterparts, they have been much less studied. The fact that there is no report of a )ϫ) to 3ϫ3 transition on the Sn/Si͑111͒ surface seems to be reflected in the lower number of publications for this system. It is known, however, that the Sn 4d core level of the Sn/Si͑111͒ )ϫ) surface shows an unexpected second component.8 Inspired by this situation, we have used several techniques to address the interesting atomic and electronic structure of Sn/Si͑111͒.The Sn/Si͑111͒ )ϫ) surface has been studied using photoelectron spectroscopy, LEED, and STM. Various Sn coverages were investigated in order to find the optimum preparation of the )ϫ) surface. The use of roomtemperature STM allowed us to check the quality of the surfaces and to characterize the different types of defects that are present. In contrast to the Sn/Ge͑111͒ system, we do not observe any transition to a 3ϫ3 phase in LEED at temperatures down to 70 K, which was the lowest temperature in this study. Despite this difference we find that both the Sn 4d core-level and valence-band spectra show the...

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Nature of the Low-Temperature3×3Surface Phase of Pb/Ge(111)

Cited by 50 publications

References 15 publications

Competing charge ordering and Mott phases in a correlated Sn/Ge(111) two-dimensional triangular lattice

Competing charge ordering and Mott phases in a correlated Sn/Ge(111) two-dimensional triangular lattice

Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces

Electronic structure ofSn/Si(111)3
Uhrberg
¹
,
Zhang
²
,
Balasubramanian
³

et al. 2000
Phys. Rev. B
56
12
43
0
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Nature of the Low-Temperature3×3Surface Phase of Pb/Ge(111)

Cited by 50 publications

References 15 publications

Competing charge ordering and Mott phases in a correlated Sn/Ge(111) two-dimensional triangular lattice

Competing charge ordering and Mott phases in a correlated Sn/Ge(111) two-dimensional triangular lattice

Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces

Electronic structure ofSn/Si(111)3Uhrberg1, Zhang2, Balasubramanian3 et al. 2000Phys. Rev. B5612430View full textAdd to dashboardCite

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Electronic structure ofSn/Si(111)3
Uhrberg
¹
,
Zhang
²
,
Balasubramanian
³

et al. 2000
Phys. Rev. B
56
12
43
0
View full text Add to dashboard Cite