Nb-Al oxide-Nb junctions for 3 mm SIS receivers

Lehnert, Thomas; Grassl, C. M.; Gundlach, K. H.; Blondel, J.

doi:10.1088/0953-2048/4/9/010

Cited by 14 publications

(4 citation statements)

References 10 publications

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“…The superconducting transition temperature 𝑇 𝑐 of 750Å Nb film was about 9.1 K. For the purpose of examining the quality of multilayers, anodization spectroscopy [18,19] was used to test the characteristics of the film interfaces in the Nb/(Al-)AlO 𝑥 -Al/Nb structure before and after improvements. The spectrum of the improved detector has a clear maximum, which means that the interface of the upper Nb film and the Al film is relatively clearer than before.…”

Section: Substrate Nbmentioning

confidence: 99%

Fabrication of High-Quality Niobium Superconducting Tunnel Junctions

Xu¹,

Cao²,

Li³

et al. 2011

Chinese Phys. Lett.

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For high-quality superconducting tunnel junctions (STJs), it is necessary to reduce leakage current as much as possible. We describe the fabrication of niobium STJs using the selective niobium (Nb) etching process and various ways to minimize the leakage current. The experiment shows that the leakage current mainly comes from shorts in the tunnel barrier layer rather than those around the junction edges. Through systematic analysis of the thin film stress, surface morphology and modified junction structures, we fabricate high-quality Nb STJs with a gap voltage of 2.8 mV and a leakage current at 1 mV as low as 8.1% and 0.023% at 4.2 K and 0.3 K, respectively.

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Section: Substrate Nbmentioning

confidence: 99%

Fabrication of High-Quality Niobium Superconducting Tunnel Junctions

Xu¹,

Cao²,

Li³

et al. 2011

Chinese Phys. Lett.

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“…However, niobium and niobium alloy junctions have such great advantages that even the fabricators of lead alloy SIS's are developing niobium technology. Niobium junctions have been fabricated and used in high performance SIS mixers [15,18,19,43,13,23]. Niobium-nitride alloy SIS's [17,44] are interesting as they will operate at higher temperatures, and possibly higher frequencies than pure .…”

Section: Sis Junction Fabricationmentioning

confidence: 99%

“…IRAM mixers have been built for 100 GHz [19] and 230 GHz [7,47]. An SIS mixer is now being developed for 345 GHz [47].…”

Section: Iram Mixermentioning

confidence: 99%

“…Since the discovery of the SIS mixer, the technology for fabricating SIS circuits has improved immensely so that nearly ideal niobium devices with sub-micron feature sizes can be fabricated [14][15][16][17][18][19][20]. Recently, the high performance of SIS mixers has been extended to submillimeter wavelength radio astronomy [8, 21-23, 20, 24].…”

Section: Introductionmentioning

confidence: 99%

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Submillimeter-wave detection with superconducting tunnel diodes

Wengler

1992

Proc. IEEE

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Superconductor-Insulator-Superconductor (SIS) diodes are the detector elements in the most sensitive heterodyne receivers available from 100 to 500 GHz. SIS mixers are the front end of radio astronomical systems around the world. SIS mixer technology is being extended to 1 THz and higher frequencies for eventual use on spaceborne astronomical experiments.Here is a short review of submillimeter SIS mixers. The role of impedance matching in the proper design of an SIS mixer is described. A variety of methods for achieving good impedance match at submillimeter frequencies are presented. The experimental state of the submillimeter SIS jnixer art is described and summarized.

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