Ba(Mg 1=3 Nb 2=3 ÞO 3 (BMN) doped and undoped Ba 0:45 Sr 0:55 TiO 3 (BST) thin films were deposited via radio frequency magnetron sputtering on Pt/TiO 2 /SiO 2 /Al 2 O 3 substrates. The surface morphology and chemical state analyses of the films have shown that the BMN doped BST film has a smoother surface with reduced oxygen vacancy, resulting in an improved insulating properties of the BST film. Dielectric tunability, loss, and leakage current (LC) of the undoped and BMN doped BST thin films were studied. The BMN dopant has remarkably reduced the dielectric loss ($38%) with no significant effect on the tunability of the BST film, leading to an increase in figure of merit (FOM). This is attributed to the opposing behavior of large Mg 2þ whose detrimental effect on tunability is partially compensated by small Nb 5þ as the two substitute Ti 4þ in the BST. The coupling between Mg Ti charged defects. The carrier transport properties of the films were analyzed in light of Schottky thermionic emission (SE) and Poole-Frenkel (PF) emission mechanisms. The result indicated that while the carrier transport mechanism in the undoped film is interface limited (SE), the conduction in the BMN doped film was dominated by bulk processes (PF). The change of the conduction mechanism from SE to PF as a result of BMN doping is attributed to the presence of uncoupled Nb Ti sitting as a positive trap center at the shallow donor level of the BST.