Near-band-edge photoluminescence of wurtzite-type AlN

Kuokštis, E.; Zhang, J.; Fareed, Q.; Yang, Jun; Simin, Grigory; Khan, M. Asif; Gaška, R.; Shur, M. S.; Rojo, C.; Schowalter, L. J.

doi:10.1063/1.1510586

Cited by 76 publications

(28 citation statements)

References 12 publications

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“…Only a few papers have presented the initial data on this topic. The near-band-edge emissions were confirmed to be very close to that in polar AlN [106,107] and InN [38,108] materials with no detailed studies of the effect of strain on them. Significant improvement of the emission intensity was observed in nonpolar AlN [107] as a result of microstructure improvement in the case of ELOG [107] or Pendeo [109] template employment.…”

Section: Optical Propertiessupporting

confidence: 68%

“…Significant improvement of the emission intensity was observed in nonpolar AlN [107] as a result of microstructure improvement in the case of ELOG [107] or Pendeo [109] template employment. Similarly to the observation for GaN the AlN bulk material with nonpolar orientations sliced from boules grown in the [0001] direction was found to possess superior emission quality [106].…”

Section: Optical Propertiesmentioning

confidence: 75%

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Development and prospects of nitride materials and devices with nonpolar surfaces

Paskova

2008

Physica Status Solidi (b)

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IntroductionThe commercial fabrication of lightemitting diodes (LED) and laser diodes (LD) from the ultraviolet to the amber, as well as the development of highpower high electron mobility transistors (HEMT) suitable for numerous telecom applications have been driven by the tremendous improvement in the nitride materials quality. Despite remarkable achievements during the last decade, however, the device performance is hampered by the presence of strong spontaneous and piezoelectric polarization fields along the typical [0001] growth direction in the wurtzite nitride materials [1]. As a consequence of these strong internal fields, the quantum wells (QW), typically used in the active region of optical emitter devices, have a triangular potential profile and the oscillator strength for optical transitions is reduced by several orders of magnitude, depending on the QW thickness [2,3]. A similar deterioration effect is observed in the nitride-based HEMT devices due to a polarization-generated charge. A typical AlGaN/GaN HEMT built in the [0001] growth direction experiences a channel charge of more than 1 × 10 13 cm

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Section: Optical Propertiessupporting

confidence: 68%

Section: Optical Propertiesmentioning

confidence: 75%

Development and prospects of nitride materials and devices with nonpolar surfaces

Paskova

2008

Physica Status Solidi (b)

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“…Some approaches have been developed to synthesize AlN films. [15,16] With the continuing development of nanotechnology, 1D structural AlN may find wide applications in many fields. Thus, considerable efforts have been made to fabricate AlN nanomaterials such as nanoparticles and nanowires.…”

mentioning

confidence: 99%

Single‐Crystalline AlN Nanotubes with Carbon‐Layer Coatings on the Outer and Inner Surfaces via a Multiwalled‐Carbon‐Nanotube‐Template‐Induced Route

et al. 2005

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Wurtzite‐type single‐crystalline AlN nanotubes with carbon coatings on the outer and inner surfaces (see Figure) were synthesized in bulk quantities through a substitution carbonitridation chemical process using multiwalled carbon nanotubes as templates. The AlN nanotubes are approximately several micrometers in length, with 45–50 nm diameters and 13 nm‐thick walls, and have potential as high‐temperature electronic or optoelectronic devices and as field emitters.

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“…Due to technical difficulties involved in the deep UV luminescence measurements and the lack of high quality AlN samples, only few publications have reported the detection of band-edge emission of AlN. Most of the studies discussed the photo-and cathodoluminescence characterization of AlN films [4 -9], and fewer focused on bulk AlN single crystals [10][11][12]. In the present work we report on the results of the structural and optical properties of high quality large bulk AlN single crystals grown by a self-seeded…”

mentioning

confidence: 99%

Cathodoluminescence studies of large bulk AlN crystals

Silveira

Freitas

Slack

et al. 2003

phys. stat. sol. (c)

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The optical properties of high quality large bulk AlN crystals have been tested by cathodoluminescence measurements carried out at different temperatures, excitation densities and electron beam energies. Both c-plane (0001) and a-plane (11 2 0) wafers were cut from bulk, single-crystals of AlN which were fabricated by the sublimation-recondensation technique. The wafer surfaces were subsequently prepared by chemical-mechanical polishing. The low-temperature near-band-edge cathodoluminescence spectra of a typical a-plane oriented AlN crystal show up to five transitions, which are tentatively assigned to free-and bound exciton recombination processes. IntroductionThe unusual combination of important physical properties of III-nitrides based semiconductors has motivated rapid research progress in the past decade, which culminated with the commercial availability of a number of optoelectronic devices. Such development was achieved in part because of the excellent luminescence efficiency of GaN light emitting diodes (LED) despite the high dislocation densities observed in the active layers heteroepitaxially grown on a variety of substrate materials. The lattice and thermal expansion mismatch of the substrate are in great part responsible for the resulting characteristics of the film grown on it [1]. Methods to produce large bulk single crystal III-nitrides native substrate candidates, as for example GaN, are still lacking. Therefore the semiconductor device industry is forced to choose alternative substrates such as sapphire and SiC. Aside from GaN, aluminium nitride (AlN) is another native substrate for nitride based semiconductor device fabrication. AlN has the same crystal structure as GaN, with a lattice mismatch along the c-plane of only 2.4%, higher thermal conductivity than, and chemical compatibility with GaN. Besides these excellent properties for high power and high temperature applications, AlN has a large direct band gap in the deep UV region at about 6.28 eV at 5 K [2] and 6.2 eV at room temperature [3]. In order to achieve fabrication of efficient emitters and detectors working in the deep UV region high-quality AlGaN alloys with high Al mole fractions are required. A homoepitaxial layer is one of the basic requirements for the fabrication of device quality layers with high Al mole concentration. In this case, AlN is the logical starting point for use as a substrate, especially for the growth of graded buffer layers to match the desired Al mole fraction. Due to technical difficulties involved in the deep UV luminescence measurements and the lack of high quality AlN samples, only few publications have reported the detection of band-edge emission of AlN. Most of the studies discussed the photo-and cathodoluminescence characterization of AlN films [4 -9], and fewer focused on bulk AlN single crystals [10][11][12]. In the present work we report on the results of the structural and optical properties of high quality large bulk AlN single crystals grown by a self-seeded

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Near-band-edge photoluminescence of wurtzite-type AlN

Cited by 76 publications

References 12 publications

Development and prospects of nitride materials and devices with nonpolar surfaces

Development and prospects of nitride materials and devices with nonpolar surfaces

Single‐Crystalline AlN Nanotubes with Carbon‐Layer Coatings on the Outer and Inner Surfaces via a Multiwalled‐Carbon‐Nanotube‐Template‐Induced Route

Cathodoluminescence studies of large bulk AlN crystals

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