Near band edge recombination mechanisms in GaTe

Zubiaga, A.; Garcı́a, J.A.; Plazaola, F.; Muñoz‐Sanjosé, V.; Martı́nez-Tomás, C.

doi:10.1103/physrevb.68.245202

Cited by 26 publications

(21 citation statements)

References 19 publications

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“…The band gaps of GaTe and GaTe:In are thereby estimated to be 1.794 and 1.797 eV, respectively, if the binding energies of FEs are taken to be 18 meV. 12 The dominant PL peak of undoped GaTe located at 1.734 eV is the bound exciton emission, an exciton bound to an acceptor ͑A 0 , X͒. The edge emissions including donor-acceptor pair ͑DAP͒ transition located at 1.57 eV and free electron to neutral acceptor transition ͑e, A 0 ͒ at 1.69 eV are very weak.…”

Section: Resultsmentioning

confidence: 99%

“…[1][2][3][4][5][6][7][8][9][10][11][12] The band-gap energy of GaTe at room temperature is around 1.7 eV. This value is ideal for room-temperature x-ray and gamma-ray radiation detector applications.…”

Section: Introductionmentioning

confidence: 96%

“…Free-exciton, boundexciton, and edge emissions of undoped GaTe crystal have been well investigated, [7][8][9][10][11][12] and a shallow acceptor level around 0.15 eV has been reported and identified to be gallium vacancy V Ga . Undoped GaTe Schottky diodes were fabricated and tested, [3][4][5][6] and one DLTS measurement conducted at room temperature and above was reported.…”

Section: Introductionmentioning

confidence: 99%

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Deep levels in GaTe and GaTe:In crystals investigated by deep-level transient spectroscopy and photoluminescence

Cui

Caudel

Bhattacharya

et al. 2009

Journal of Applied Physics

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Deep levels of undoped GaTe and indium-doped GaTe crystals are reported for samples grown by the vertical Bridgman technique. Schottky diodes of GaTe and GaTe:In have been fabricated and characterized using current-voltage, capacitance-voltage, and deep-level transient spectroscopy ͑DLTS͒. Three deep levels at 0.40, 0.59, and 0.67 eV above the valence band were found in undoped GaTe crystals. The level at 0.40 eV is associated with the complex consisting of gallium vacancy and gallium interstitial ͑V Ga -Ga i ͒, the level at 0.59 eV is identified as the tellurium-on-gallium antisite ͑Te Ga ͒, and the last one is tentatively assigned to be the doubly ionized gallium vacancy ͑V Ga ‫ء‬ ͒. Indium isoelectronic doping is found to have noticeable impacts on reducing the Schottky saturation current and suppressing the densities of Te Ga and V Ga ‫ء‬ defects. The peak which dominated the DLTS spectrum of GaTe:In is assigned to be the defect complex consisting of V Ga and indium interstitial ͑In i ͒. Low-temperature photoluminescence ͑PL͒ spectroscopy measurements were performed on GaTe and GaTe:In crystals. A shallow acceptor level at 140 meV corresponding to V Ga was measured in undoped GaTe. Two shallow acceptor levels at 123 and 74 meV corresponding to V Ga and indium-on-gallium antisite In Ga were observed in GaTe:In samples. The PL results suggested that the indium atoms could occupy gallium vacant sites during GaTe crystal growth period and thereby change the electrical and optical properties of GaTe crystal.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Deep levels in GaTe and GaTe:In crystals investigated by deep-level transient spectroscopy and photoluminescence

Cui

Caudel

Bhattacharya

et al. 2009

Journal of Applied Physics

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“…The III-VI semiconductors have been the subject of many investigations due to their peculiar electrical and optical properties, and their potential applications in electronic and optoelectronic devices, such as phase-change random access memories (PRAMs), solid-state batteries, and solar cells [1][2][3][4]. Among these III-VI semiconductors, In 2 Se 3 is a defective structure of tetrahedral bonding, where one-third of the sites is vacant and forms a screw array along the c axis.…”

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confidence: 99%

Structural and Optical Characteristics ofγ-In₂Se₃Nanorods Grown on Si Substrates

Yang

Tong

et al. 2011

Journal of Nanomaterials

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This study attempted to grow single-phaseγ-In2Se3nanorods on Si (111) substrates by metal-organic chemical vapor deposition (MOCVD). High-resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) confirmed that the In2Se3nanorods are singularly crystallized in theγphase. The photoluminescence ofγ-In2Se3nanorods at 15 K was referred to as free and bound exciton emissions. The bandgap energy ofγ-In2Se3nanorods at room temperature was determined to be~1.99 eV, obtained from optical absorption.

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“…Other authors studied the recombination of free excitons [8][9][10][11][12] by photoluminescence ͑PL͒. The free to bound and donor-acceptor pair PL recombinations in the near-band edge [13][14][15][16] and time resolved PL at 4 K ͑Ref. 17͒ have been also studied.…”

Section: Introductionmentioning

confidence: 98%

Temperature- and illumination-induced charge-state change in divacancies of GaTe

et al. 2010

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Temperature-dependent positron annihilation lifetime spectroscopy measurements have been performed in GaTe samples, with and without illumination. The average lifetime shows a monotonous temperature evolution but the lifetime decomposition shows a rich behavior. It is produced by two types of vacancy defects. The vacancy-type defects characterized by their shorter lifetime change their charge state below 100 K and when illuminating with light of an energy of 0.8 eV.

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Near band edge recombination mechanisms in GaTe

Cited by 26 publications

References 19 publications

Deep levels in GaTe and GaTe:In crystals investigated by deep-level transient spectroscopy and photoluminescence

Deep levels in GaTe and GaTe:In crystals investigated by deep-level transient spectroscopy and photoluminescence

Structural and Optical Characteristics ofγ-In₂Se₃Nanorods Grown on Si Substrates

Temperature- and illumination-induced charge-state change in divacancies of GaTe

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Near band edge recombination mechanisms in GaTe

Cited by 26 publications

References 19 publications

Deep levels in GaTe and GaTe:In crystals investigated by deep-level transient spectroscopy and photoluminescence

Deep levels in GaTe and GaTe:In crystals investigated by deep-level transient spectroscopy and photoluminescence

Structural and Optical Characteristics ofγ-In2Se3Nanorods Grown on Si Substrates

Temperature- and illumination-induced charge-state change in divacancies of GaTe

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Product

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Structural and Optical Characteristics ofγ-In₂Se₃Nanorods Grown on Si Substrates