Structural and Optical Characteristics ofγ-In2Se3Nanorods Grown on Si Substrates

Yang, Miin-Shen; Hu, C.; Tong, Shih-Chang; Shen, Ji‐Lin; Lan, Shan-Ming; Wu, Cheng‐Hsien; Lin, Tai‐Yuan

doi:10.1155/2011/976262

Cited by 7 publications

(2 citation statements)

References 21 publications

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“…The hexagonal phase of γ-In 2 Se 3 has been represented by diffraction peaks such as 25.00° (1 1 0), 27.77° (0 0 6), 30.95° (2 0 2), 43.92° (3 0 0), (ICSD card: 00-023-0294) and 45.98° (1 2 5), 32.35° (2 0 3), 50.10° (1 1 9) (ICSD card: 01–071-0250) respectively. The observed diffraction peaks support the result obtained various workers 26 – 30 . The other peaks at 26.06° (1 0 1), 26.65° (0 1 2) corresponds to rhombohedral phase of InSe (ICSD card: 00–029-0676) have been indexed in the figure.…”

Section: Resultssupporting

confidence: 91%

Observation of high nonlinearity in Bi doped BixIn35-xSe65 thin films with annealing

Priyadarshini¹,

Das²,

Alagarasan

et al. 2021

Sci Rep

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The present work demonstrates the impact of thermal annealing on the structural, linear, and non-linear optical characteristics of thermally evaporated BixIn35-xSe65 (x = 0, 5, 10, 15 at%) thin films. The prominent crystalline phases have been developed for all annealed films at 450 °C whereas the films remain amorphous at 350 °C annealing. The XRD and Raman analysis showed the phase transformation of Bi-doped films and new Bi2Se3 phases developed upon annealing at 450 °C. The phase transformation induced change increased the linear and nonlinear properties with great extent as seen from the UV–visible optical studies. The direct and indirect optical bandgaps decreased with annealing temperature and also with Bi % content due to the formation of surface dangling bonds near the crystallite sites. The static linear refractive index and high-frequency dielectric constants were increased with annealing. The third-order non-linear susceptibility and non-linear refractive index were found to be greatly influenced by annealing temperature and increased with bismuth content. The FESEM micrographs also showed the phase transformation and EDX analysis showed the composition. The results obtained from the materials showed the potentiality to be useful for photovoltaic and optoelectronic applications.

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Section: Resultssupporting

confidence: 91%

Observation of high nonlinearity in Bi doped BixIn35-xSe65 thin films with annealing

Priyadarshini¹,

Das²,

Alagarasan

et al. 2021

Sci Rep

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show abstract

“…More recently, it is reported that single-phased In 2 Se 3 nanorods have been successfully grown on Si (111) substrates by the metal-organic chemical vapor deposition (MOCVD) technique. The band gap energy of these nanorods was found to be ∼1.99 eV [10].…”

Section: Introductionmentioning

confidence: 98%

Electrical parameters of Al/InSe/C RF sensors

Qasrawi

2014

Phys. Scr.

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An Al/InSe/C Schottky device is designed on the surface of amorphous InSe thin films. The device is observed to exhibit a switching property at particular biasing voltages. The ‘on/off’ current ratio is found to be 7.9 and 9.3 at forward and reverse biasing voltages of 2.0 and 2.25 V, respectively. The ‘off’ and ‘on’ operational modes are ascribed to the domination of the tunneling of charged particles through a barrier height of 0.83 eV with a depletion region width of 64 nm and due to the domination of the thermionic emission of charged carriers over a barrier height of 0.53 eV, respectively. In addition, the spectral analysis of the capacitance of the device which was carried in the frequency range of 10.0 k--3.0 GHz reflected dc voltage biasing-dependent high quality resonating peaks. The strongest one appeared at a frequency of 36.8 MHz for a biasing voltage of 0.70 V. Furthermore, the loss tangent of the Al/InSe/C device is found to be of the order of 10−7 at 3.0 GHz. Consistently, the capacitance--voltage spectra of these sensors reflected pronounced tunability up to 100 MHz. The Al/InSe/C device performance, the switching properties and the quality of the resonance peaks indicate the possibility of using these sensors in RF technology.

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Piezoelectric and optoelectronic properties of α-In2Se3 single-crystal nanobelts synthesized by a direct selenization of In2O3

Yang

et al. 2022

J Mater Sci

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Structural and Optical Characteristics ofγ-In₂Se₃Nanorods Grown on Si Substrates

Cited by 7 publications

References 21 publications

Observation of high nonlinearity in Bi doped BixIn35-xSe65 thin films with annealing

Observation of high nonlinearity in Bi doped BixIn35-xSe65 thin films with annealing

Electrical parameters of Al/InSe/C RF sensors

Piezoelectric and optoelectronic properties of α-In2Se3 single-crystal nanobelts synthesized by a direct selenization of In2O3

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