Near‐Bulk Conductivity of Gold Nanowires as Nanoscale Interconnects and the Role of Atomically Smooth Interface

Critchley, Kevin; Khanal, Bishnu P.; Górzny, Marcin Ł.; Vigderman, Leonid; Evans, Stephen D.; Zubarev, Eugene R.; Kotov, Nicholas A.

doi:10.1002/adma.201000236

Cited by 108 publications

(111 citation statements)

References 53 publications

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“…Kotov and coworkers have shown that the 92 and 185 nm B diameter Au NWs can possess near-bulk conductivity if the NWs are highly crystalline and are highly smooth. 9 We have reported that the core/shell nanocables of Ag@C are very stable, and the Ag NW core can almost retain the conductivity of bulk silver. 14 The excellent electrical transport properties of Au and Ag NWs make them an ideal candidate as interconnects for linking nanoscale devices, but copper is more abundant and less expensive than gold or silver and is currently widely used in different commercial ways.…”

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confidence: 99%

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Copper Nanowires as Nanoscale Interconnects: Their Stability, Electrical Transport, and Mechanical Properties

Wang

Guo

et al. 2014

ACS Nano

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Application of copper nanowires (Cu NWs) for interconnects in future nanodevices must meet the following needs: environmental stability and superior electrical transport properties. Here, we demonstrate a kind of Cu NW that possesses the both properties. The Cu NWs were synthesized through a hydrothermal route with the reduction of copper chloride using octadecylamine (ODA). The reasons for their environmental stability could be due to interaction of ODA(+) molecules with the surface of Cu NWs and forming strong N-Cu chemical bonds. Electrical transport properties of individual Cu NW were investigated by using the four-probe measurement, showing the temperature-dependent resistance of the Cu NW was fairly linear in the temperature range from 25 to 300 K and the Cu NW retained the low resistivity of approximately 3.5 × 10(-6) Ω · cm at room temperature, near the resistivity value of bulk copper. The maximum transport current density for the Cu NW should be superior to 1.06 × 10(7) A · cm(-2). In addition, the Cu NWs have ultralow junction resistance. The present study indicates that the Cu NWs could act as a multifunctional building blocks for interconnects in future nanoscale devices.

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“…8,9 Many kinds of one-dimensional (1D) conductive nanomaterials have been intensively exploited in the past few years, such as carbon nanotubes (CNTs), 10 metal NWs (e.g., Ag, 11À16 Au, 8,9 Cu, 17À20 Mo, 21 Pb, 22,23 Pt, 24 etc. ), inorganic compound NWs (e.g., RuO 2 , 25 Ni 3 Si, 26 etc.…”

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Copper Nanowires as Nanoscale Interconnects: Their Stability, Electrical Transport, and Mechanical Properties

Wang

Guo

et al. 2014

ACS Nano

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“…37. 37 We assumed a surface roughness h ¼ 0.03 nm (atomically smooth), which seems to be justified given the recent results of Critchley et al 37,38 A is the cross-sectional area of the nanowire, and s ext is the extinction cross-section of the nanowires. Fig.…”

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confidence: 99%

The effect of nanowire length and diameter on the properties of transparent, conducting nanowire films

et al. 2012

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This article describes how the dimensions of nanowires affect the transmittance and sheet resistance of a random nanowire network. Silver nanowires with independently controlled lengths and diameters were synthesized with a gram-scale polyol synthesis by controlling the reaction temperature and time. Characterization of films composed of nanowires of different lengths but the same diameter enabled the quantification of the effect of length on the conductance and transmittance of silver nanowire films. Finite-difference time-domain calculations were used to determine the effect of nanowire diameter, overlap, and hole size on the transmittance of a nanowire network. For individual nanowires with diameters greater than 50 nm, increasing diameter increases the electrical conductance to optical extinction ratio, but the opposite is true for nanowires with diameters less than this size. Calculations and experimental data show that for a random network of nanowires, decreasing nanowire diameter increases the number density of nanowires at a given transmittance, leading to improved connectivity and conductivity at high transmittance (>90%). This information will facilitate the design of transparent, conducting nanowire films for flexible displays, organic light emitting diodes and thin-film solar cells.Indium tin oxide (ITO) is the material of choice for transparent conducting films in flat-panel displays, organic solar cells, and organic light emitting diodes because, with a sheet resistance of 10 U sq À1 at a transmittance of 90% (l ¼ 550 nm), it is highly conductive and transparent. However, indium is a scarce element, ITO is brittle, and ITO film is expensive because it is produced with a vapor-phase coating process that is 1000 times slower than newspaper printing.1,2 These problems have motivated a search for alternatives to ITO that are flexible and can be deposited from liquids at high coating rates.3-9 As discussed in recent reviews, promising solution-processed alternatives to ITO include poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate), carbon nanotubes, graphene, ITO nanowires, and metal nanowires.10-15 Of these alternatives, films of silver nanowires currently have the highest conductance and transmittance. 4,16-18For example, Leem et al. have recently reported obtaining silver nanowire films with a sheet resistance of 10 U sq À1 at a transmittance of 89.3% (l ¼ 550 nm), nearly matching ITO. Although silver ($1000 kg À1) is more expensive than indium ($800 kg À1 ), the fact that silver nanowire films can be produced with highthroughput wet-coating processes allows them to achieve lower costs. 19,20Here we report a simple polyol synthesis that enables control over the length and diameter of silver nanowires, as well as their production on the gram scale. By measuring the properties of films composed of nanowires with distinct ranges of dimensions, we have obtained the first quantitative confirmation of theoretical predictions for the effect of nanowire length and number density on the conductance of 2D...

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“…3(f) we can also find that the resistivity of the gold nanowire increases obviously with the decrease of its width, which may originate from both the diffuse surface scattering and grain-boundary scattering of the electrons. 27,28 To meet the ever-growing demands for nanoelectronics and nanophotonics, 1,6,7,12,29,30 lots of nanodevices have to be fabricated on insulating substrates such as SiO 2 , quartz glass, and plastics, etc. However, direct-writing-based EBL processes cannot work well with insulating substrates because of the unfavorable and even destructive charging effect.…”

Section: Experimental and Discussionmentioning

confidence: 99%

Highly efficient and controllable method to fabricate ultrafine metallic nanostructures

Cai

Zhang

et al. 2015

AIP Advances

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We report a highly efficient, controllable and scalable method to fabricate various ultrafine metallic nanostructures in this paper. The method starts with the negative poly-methyl-methacrylate (PMMA) resist pattern with line-width superior to 20 nm, which is obtained from overexposing of the conventionally positive PMMA under a low energy electron beam. The pattern is further shrunk to sub-10 nm line-width through reactive ion etching. Using the patter as a mask, we can fabricate various ultrafine metallic nanostructures with the line-width even less than 10 nm. This ion tailored mask lithography (ITML) method enriches the top-down fabrication strategy and provides potential opportunity for studying quantum effects in a variety of materials. C 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

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Near‐Bulk Conductivity of Gold Nanowires as Nanoscale Interconnects and the Role of Atomically Smooth Interface

Cited by 108 publications

References 53 publications

Copper Nanowires as Nanoscale Interconnects: Their Stability, Electrical Transport, and Mechanical Properties

Copper Nanowires as Nanoscale Interconnects: Their Stability, Electrical Transport, and Mechanical Properties

The effect of nanowire length and diameter on the properties of transparent, conducting nanowire films

Highly efficient and controllable method to fabricate ultrafine metallic nanostructures

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