In this paper, we present near-field scanning optical microscope (NSOM) in illumination mode as effective tool for semiconductor device surface patterning. In the illumination mode, the non-contact mode of the NSOM lithography is performed, where the fiber probe exposes defined spots in thin photoresist layer. As the scanning technique allows irregular two-dimensional patterning of different surfaces, this was applied on the GaAs/AlGaAs based light emitting diode surface. Patterned surface was analyzed by optical microscope and atomic force microscope.Keywords-near-field scanning optical microscope lithography, irregular 2D structure, light emitting diode surface patterning, photonic structure.