Near infrared avalanche photodiodes with bulk Al0.04Ga0.96Sb and GaSb/AlSb superlattice gain layers

Cheng, X.-C.; McGill, T. C.

doi:10.1063/1.371405

Cited by 9 publications

(4 citation statements)

References 17 publications

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“…Studies about dynamics of ANNNI model were developed but in two dimensional versions of the model but such works do not explore critical properties. For example, in [28], [29], the kinetics of domain growth of the one and twodimensional anisotropic ANNNI model was explored via Monte Carlo methods using Glauber and Heat-Bath multispin dynamics respectively. In the next subsection we briefly present the nonequilibrium approach to be used in our analysis.…”

Section: Introduction a Modulated Systems And The Lifshitz Pointmentioning

confidence: 99%

Time-dependent Monte Carlo simulations of critical and Lifshitz points of the axial-next-nearest-neighbor Ising model

2013

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In this work, we study the critical behavior of second order points and specifically of the Lifshitz point (LP) of a three-dimensional Ising model with axial competing interactions (ANNNI model), using time-dependent Monte Carlo simulations. First of all, we used a recently developed technique that helps us localize the critical temperature corresponding to the best power law for magnetization decay over time: M m 0 =1 ∼ t −β/νz which is expected of simulations starting from initially ordered states. Secondly, we obtain original results for the dynamic critical exponent z, evaluated from the behavior of the ratio F2(t) = M 2 m 0 =0 / M 2 m 0 =1 ∼ t 3/z , along the critical line up to the LP. Finally, we explore all the critical exponents of the LP in detail, including the dynamic critical exponent θ that characterizes the initial slip of magnetization and the global persistence exponent θg associated to the probability P (t) that magnetization keeps its signal up to time t. Our estimates for the dynamic critical exponents at the Lifshitz point are z = 2.34(2) and θg = 0.336(4), values very different from the 3D Ising model (ANNNI model without the next-nearest-neighbor interactions at z-axis, i.e., J2 = 0) z ≈ 2.07 and θg ≈ 0.38. We also present estimates for the static critical exponents β and ν, obtained from extended time-dependent scaling relations. Our results for static exponents are in good agreement with previous works

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Section: Introduction a Modulated Systems And The Lifshitz Pointmentioning

confidence: 99%

Time-dependent Monte Carlo simulations of critical and Lifshitz points of the axial-next-nearest-neighbor Ising model

2013

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“…There is growing interest in these compounds to make GaAlSb avalanche photodiodes having specific applications in the infra-red region [2]. The optical properties of these alloys can be tailored by varying the metallic constituents.…”

Section: Introductionmentioning

confidence: 99%

Charge density of Ga x Al1 − x Sb

Joshi

Patel

2008

Pramana - J Phys

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Charge density calculations and electronic band structures for GaxAl1−xSb with x = 1.0, 0.5 and 0.0 are presented in this work. The calculations are performed using the empirical pseudopotential method. The charge density is computed for a number of planes, i.e. z = 0.0, 0.125 and 0.25A0 by generating the potential through a number of potential parameters available in the literature. The virtual crystal approximation was applied for the semiconducting alloy. The characteristics of the band structure and charge density are observed to be affected by the potential parameters. Calculated band gaps and the nature of gaps are in good agreement with the experimental data reported. The ionicity is also reasonably in good agreement with other scales proposed in the literature; however the formulation needs to be improved. The present work also demands indirect experimental band gap for the alloy.

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“…Antimonide-based compound semiconductors ͑ABCS͒ are also promising candidates as ''barrier materials'' for optoelectronic and wireless devices that operate in the terahertz or mid-infrared region from 8 -14 m. 1 ABCS material properties, such as low effective electron/hole mass, high mobility, and low threshold voltage operation, 2 have led to high-quantum-efficiency photodetectors, 3 thermophotovoltaic devices, 4 avalanche photodiodes, 5 tunnel switch diodes, 6 high-reflectivity Bragg reflectors for 1.5 m communications, 7 and room-temperature mid-infrared region quantum-well laser diodes. 8 In order to fabricate such optoelectronic devices, it is necessary to have a substrate that can support epitaxial growth of ternary and quaternary materials that cover a wide spectral range, from 0.3 to 1.58 eV, or from the band gap of InAs to the band gap of AlSb.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial growth on gas cluster ion-beam processed GaSb substrates using molecular-beam epitaxy

Krishnaswami¹,

Vangala²,

Zhu³

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Near infrared avalanche photodiodes with bulk Al0.04Ga0.96Sb and GaSb/AlSb superlattice gain layers

Cited by 9 publications

References 17 publications

Time-dependent Monte Carlo simulations of critical and Lifshitz points of the axial-next-nearest-neighbor Ising model

Time-dependent Monte Carlo simulations of critical and Lifshitz points of the axial-next-nearest-neighbor Ising model

Charge density of Ga x Al1 − x Sb

Epitaxial growth on gas cluster ion-beam processed GaSb substrates using molecular-beam epitaxy

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