Near-infrared heterojunction field modulated phototransistors with distinct photodetection/photostorage switching features for artificial visuals

Han, Jiayue; Du, Xin; Zhang, Zhenhan; He, Zhike; Chen, Han; Wang, Fang; Tao, Silu; Hu, Weida; Shan, Chongxin; Yang, Ming–Hsuan; Gou, Jun; Wu, Zhiming; Jiang, Yadong; Wang, Jun

doi:10.1039/d2tc01363k

Cited by 6 publications

(6 citation statements)

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“…[35][36][37][38][39] To address this, researchers have proposed utilizing threeterminal devices or altering the direction of voltage to control the photoresponse speed. [40][41][42][43][44] However, three-terminal devices that use gate voltage to regulate the photoresponse speed not only require more complex preparation processes, device structures, and operating procedures but also have significantly higher power consumption due to the additional gate volt-age applied. [40,41,44] Moreover, the reported devices either exhibited slow photoresponse speeds (approximately s or ms) that failed to meet the high-speed requirements of high-performance photodetectors, [40,41,43] or lacked the array integration to enable more advanced simulation of human vision functionalities.…”

Section: Introductionmentioning

confidence: 99%

“…[40][41][42][43][44] However, three-terminal devices that use gate voltage to regulate the photoresponse speed not only require more complex preparation processes, device structures, and operating procedures but also have significantly higher power consumption due to the additional gate volt-age applied. [40,41,44] Moreover, the reported devices either exhibited slow photoresponse speeds (approximately s or ms) that failed to meet the high-speed requirements of high-performance photodetectors, [40,41,43] or lacked the array integration to enable more advanced simulation of human vision functionalities. [42] Therefore, it is of utmost importance to develop dual-terminal array devices that are not only high-performance but also facilitate easy switching of functionalities.…”

Section: Introductionmentioning

confidence: 99%

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Dual‐Mode Conversion of Photodetector and Neuromorphic Vision Sensor via Bias Voltage Regulation on a Single Device

Feng,

Li,

Feng

et al. 2023

Advanced Materials

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Simultaneous implementation of photodetector and neuromorphic vision sensor (NVS) on a single device faces a great challenge, due to the inherent speed discrepancy in their photoresponse characteristics. In this work, a trench‐bridged GaN/Ga2O3/GaN back‐to‐back double heterojunction array device is fabricated to enable the advanced functionalities of both devices on a single device. Interestingly, the device shows fast photoresponse and persistent photoconductivity behavior at low and high voltages, respectively, through the modulation of oxygen vacancy ionization and de‐ionization processes in Ga2O3. Consequently, the role of the optoelectronic device can be altered between the photodetector and NVS by simply adjusting the magnitude of bias voltage. As a photodetector, the device is able to realize fast optical imaging and optical communication functions. On the other hand, the device exhibits outstanding image sensing, image memory, and neuromorphic visual pre‐processing as an NVS. The utilization of NVS for image pre‐processing leads to a noticeable enhancement in both recognition accuracy and efficiency. The results presented in this work not only offer a new avenue to obtain complex functionality on a single optoelectronic device but also provide opportunities to implement advanced robotic vision systems and neuromorphic computing.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Dual‐Mode Conversion of Photodetector and Neuromorphic Vision Sensor via Bias Voltage Regulation on a Single Device

Feng,

Li,

Feng

et al. 2023

Advanced Materials

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“…In addition, non-volatility has become a key factor for bionic devices because of the learning nature of biological behavior. Hence, different functional layers beyond conventional dielectric materials (e.g., ferroelectric, [48,49] charge trapping, organic, [50][51][52] and ion gel gates [53] ) FETs as gate dielectric layers are employed shown in Figure 3b-ii. Ferroelectric materials are a common nonvolatile storage material for memory.…”

Section: Three-terminal Devicesmentioning

confidence: 99%

Progress in Bioinspired Photodetectors Design for Visual Information Processing

Deng

Wang

et al. 2023

Adv Funct Materials

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Rapid development of modern science and technology has prompted explosive growth of data volumes, especially the visual information, which brings heavy pressure on information processing and computation. The classic technical route to improve the computation power of image processing units by reducing the critical dimension of the transistors according to Moore's law gradually fails due to the physical limit of transistors’ footprint and the separated architectures. Inspired by human vision systems, retina‐like photodetectors that mimic their spatial and temporal properties have attracted widespread attention. These developed architectures enable the early data processing in‐ or near‐sensor, significantly reducing the computing power required in the back end. Herein, a comprehensive review on bioinspired photodetectors that possess the spatial and temporal properties of biological vision is provided. The properties of retina are summarized and presented first. Basic structure design and operation mechanism of those photodetectors with spatial properties of retina (including the distribution of receptive fields and the shape of the hemisphere) and temporal properties of retina (including the memory properties enabled learning and the light intensity adaptation) are reviewed thoroughly. Eventually, challenges and future perspectives are commented and provided to facilitate the rapid development of in‐ or near‐sensor computing photodetectors.

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“…[1,2,27] Studies on multifunctional devices implementing both PD and PS behaviors in an optoelectronic device have been reported. [23,[25][26][27]33] This simplifies the complex, highly integrated electronics for many applications. [27] The multifunctional devices are shown in Table 1 using organic semiconductors, [23,26,27] MoS 2 , [25] and perovskite [24] for photoactive material.…”

mentioning

confidence: 99%

“…[23,[25][26][27]33] This simplifies the complex, highly integrated electronics for many applications. [27] The multifunctional devices are shown in Table 1 using organic semiconductors, [23,26,27] MoS 2 , [25] and perovskite [24] for photoactive material.…”

mentioning

confidence: 99%

Multifunctional Crystalline InGaSnO Phototransistor Exhibiting Photosensing and Photosynaptic Behavior Using Oxygen Vacancy Engineering

et al. 2023

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A multifunctional optoelectronic device implementing photodetector, photosynapse, and photomemory is of increasing attention for neuromorphic system. This enables multiple devices to be replaced with a single device, which simplifies the structure of complex, highly integrated electronics. Here, a multifunctional c‐axis‐aligned crystalline indium gallium tin oxide thin‐film transistor (TFT) optoelectronic device is demonstrated. The photodetecting and photosynaptic behaviors could be demonstrated by tuning of gate pulse. The device shows a high responsivity of 1.1 × 106 A W−1 to blue light (467 nm) and cutoff frequency (f−3dB) of 2400 Hz exhibiting high frequency switching using a gate reset pulse. It is possible to implement photosynaptic behavior using persistent photoconductivity effect by applying a gate bias to make the TFT depletion mode. When potentiation and depression of synaptic weight are implemented with light pulse and gate voltage pulse, respectively, 64‐state potentiation‐depression curves are demonstrated with excellent nonlinearity of 1.13 and 2.03, respectively. When an artificial neural network is constructed with this device for the Modified National Institute of Standards and Technology training pattern recognition simulation, it shows a high pattern recognition accuracy of 90.4%.

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Near-infrared heterojunction field modulated phototransistors with distinct photodetection/photostorage switching features for artificial visuals

Abstract: With the rising demand for recording, computing and image capture, advanced optoelectronic detection, storage and logic devices are highly pursued. Nevertheless, a multi-functional vision chip based on infrared detection and...

Cited by 6 publications

References 50 publications

Dual‐Mode Conversion of Photodetector and Neuromorphic Vision Sensor via Bias Voltage Regulation on a Single Device

Dual‐Mode Conversion of Photodetector and Neuromorphic Vision Sensor via Bias Voltage Regulation on a Single Device

Progress in Bioinspired Photodetectors Design for Visual Information Processing

Multifunctional Crystalline InGaSnO Phototransistor Exhibiting Photosensing and Photosynaptic Behavior Using Oxygen Vacancy Engineering

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