Near room-temperature IR photo-detectors

Piotrowski, J.; Galus, W.; Grudzień, M.

doi:10.1016/0020-0891(91)90037-g

Cited by 100 publications

(75 citation statements)

References 83 publications

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“…The use of monolithic optical immersion of active elements in a high refraction index hyperhemispherical lens results in a dramatic improvement of performance compared with the nonimmersed device of the same optical size, namely a decrease of electric capacitance and dark current by two orders of magnitude [53]. In addition, the use of the double pass of radiation for enhanced absorption makes possible the reduction of the absorber thickness keeping unchanged the quantum efficiency.…”

Section: Quantum Cascade Lasersmentioning

confidence: 99%

Analysis of Free-Space Optics Development

Mikołajczyk¹,

Bielecki²,

Bugajski³

et al. 2017

Metrology and Measurement Systems

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The article presents state of work in technology of free-space optical communications (Free Space Optics − FSO). Both commercially available optical data links and their further development are described. The main elements and operation limiting factors of FSO systems have been identified. Additionally, analyses of FSO/RF hybrid systems application are included. The main aspects of LasBITer project related to such hybrid technology for security and defence applications are presented.

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Section: Quantum Cascade Lasersmentioning

confidence: 99%

Analysis of Free-Space Optics Development

Mikołajczyk¹,

Bielecki²,

Bugajski³

et al. 2017

Metrology and Measurement Systems

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“…As the result, extremely uni− form epitaxial layers were grown [17]. These layers were used for fabrication of photoconductive, photoelectromag− netic, and photovoltaic detectors operating in the middle wavelength IR (MWIR) and LWIR range at near room temperature [18][19][20][21]. The first long wavelength (»10.6 μm) detectors operating at high temperatures [so−called hot ope− rating tempe− rature (HOT) detectors] were demonstrated already in 1972 [19].…”

Section: Polish Perspectivementioning

confidence: 99%

History of HgTe-based photodetectors in Poland

Rogalski

2010

Opto-Electronics Review

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In Poland, the HgCdTe studies began in 1960 at the Institute of Physics, Warsaw University. The material processing laboratory was created by Giriat and later by Dziuba, Gałązka, and others. Bridgman technique with sealed thick wall quartz ampoules was used to grow material suitable for research and experimental devices. Among the first papers published in 1961 and 1963 there were the Polish works devoted to preparation, doping, and electrical properties of HgCdTe.Infrared detector’s research and development efforts in Poland were concentrated mostly on uncooled market niche. At the beginning, a modified isothermal vapour phase epitaxy has been used for research and commercial fabrication of photoconductive, photoelectromagnetic and other HgCdTe devices. Bulk growth and liquid phase epitaxy were also used. Recently, the fabrication of infrared devices relies on low temperature epitaxial technique, namely metalorganic vapour phase deposition.At present stage of development, the photoconductive and photoelectromagnetic (PEM) detectors are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, photodiodes offer high performance and very fast response. However, conventional photovoltaic uncooled detectors suffer from low quantum efficiency and very low junction resistance. The problems have been solved with advanced band gap engineered architecture, multiple cell heterojunction devices connected in series, and monolithic integration of the detectors with microoptics.In final part of the paper, the Polish achievements in technology and performance of HgMnTe and HgZnTe photodetectors are presented.

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“…The layers were used as the basis for fabrication of photoconductive, photoelectromagnetic and photovoltaic detectors operating in the MWIR and LWIR range at near room temperature [6,[8][9][10][11]. The first long wavelength (»10.6 µm) detectors operating at high temperatures ("HOT" detectors) were demonstrated already in 1972 [6,9].…”

Section: Research On Hg 1-x CD X Te and Related Ir Devicesmentioning

confidence: 99%

“…In the early 1900's, VIGO System recognized fundamental limitations to performance of the infrared detectors imposed by unavoidable physic of the thermal generation and the ways to perfect detection with HOT detectors [11,[44][45][46][47]. The general expression for maximum detectivity of the optimized detector of any type was derived [48]:…”

Section: D Heterostructure Photodetector Conceptmentioning

confidence: 99%

Uncooled infrared photodetectors in Poland

Piotrowski

2006

Opto-Electronics Review

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The history and present status of the middle and long wavelength Hg1-xCdxTe infrared detectors in Poland are reviewed. Research and development efforts in Poland were concentrated mostly on uncooled market niche.Technology of the infrared photodetectors has been developed by several research groups. The devices are based on mercury-based variable band gap semiconductor alloys. Modified isothermal vapour phase epitaxy (ISOVPE) has been used for many years for research and commercial fabrication of photoconductive, photoelectromagnetic and other devices. Bulk growth and liquid phase epitaxy was also used. At present, the fabrication of IR devices relies on low temperature epitaxial technique, namely metalorganic vapour phase deposition (MOCVD), frequently in combination with the ISOVPE.Photoconductive and photoelectromagnetic detectors are still in production. The devices are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, the PV devices could offer high performance and very fast response. At present, the uncooled long wavelength devices of conventional design suffer from two issues; namely low quantum efficiency and very low junction resistance. It makes them useless for practical applications. The problems have been solved with advanced 3D band gap engineered architecture, multiple cell heterojunction devices connected in series, monolithic integration of the detectors with microoptics and other improvements. Present fabrication program includes devices which are optimized for operation at any wavelength within a wide spectral range 1–15 μm and 200–300 K temperature range. Special solutions have been applied to improve speed of response. Some devices show picoseconds range response time. The devices have found numerous civilian and military applications.

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Near room-temperature IR photo-detectors

Cited by 100 publications

References 83 publications

Analysis of Free-Space Optics Development

Analysis of Free-Space Optics Development

History of HgTe-based photodetectors in Poland

Uncooled infrared photodetectors in Poland

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