Nearly perfect single crystals of layer compounds grown by iodine vapour-transport techniques

Rimmington, H. P. B.; Balchin, A. A.; Tanner, B. K.

doi:10.1016/0022-0248(72)90319-3

Cited by 89 publications

(34 citation statements)

References 6 publications

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“…The sandwiched layers of cation and anion remain unsheared in this process and the glide vectors are of the type Au, Bu, Cu . Stacking faults of this type, extending in width up to a mil-limetre, have been detected in vapour transported tin disulphide [90] (see Figure 20). …”

Section: Dislocations and Stacking Faultsmentioning

confidence: 96%

“…Examination by X-ray topographic methods [90] indicate that the dislocation density may fall as low as 100 cm -2 for the growth products.…”

Section: The Growth Of Layer Compoundsmentioning

confidence: 99%

“…Lang X-ray topography was first applied to a series of layer compounds, viz. SnSZ, SnSez, TiSz, ZrSz, HfS 2 , grown from the vapour phase [90], and an extended study of a related compound, ' Y -(n Z S 3 has been made [133]' The Lang method requires setting the single crystal at the Bragg reflecting position relative to a narrow, highly collimated, beam of X-rays and traversing the crystal in synchronism with a photographic plate recording the diffracted beam. As the X-ray beam scans the crystal an X-ray image of the dislocations and stacking faults is recorded on the plate, with a one-to-one correspondence between points in the image and points in the crystal projection.…”

Section: Dislocations and Stacking Faultsmentioning

confidence: 99%

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Growth and the Crystal Characteristics of Dichalcogenides Having Layer Structures

Balchin¹

1976

Crystallography and Crystal Chemistry of Materials With Layered Structures

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Basic StructuresOf the 101 compounds which are listed in Landolt-Bornstein [IJ or Wyckoff [2J as having layer like structures related to those of cadmium iodide, cadmium chloride or molybdenum disulphide, thirty are dichalcogenides, i.e. metallic disulphides, diselenides or ditellurides. They comprise the compounds listed in Table 1. The remainder essentially are the di-halides and di-hydroxides of the same metals.Tubbs [3J has reviewed the optical properties and chemical decomposition of halides with layer structures, and the structural, optical and electronic properties of the transition metal dichalcogenides are extensively reviewed by Wilson and Y offe [4J. A description of the preparation and properties of some of the Group IV-VI2 chalcogenides having the cadmium iodide layer structure has been given by Greenaway and Nitsche [5J.Wyckoff distinguishes between the cadmium iodide structure and the cadmium chloride structure; the cadmium iodide structure has an hexagonal unit cell containing a single molecule, with cations at special positions (0,0,0) and anions at positions (1, t, u) and (t,1, -u) of space-group P3ml, where u is approximately t; the cadmium chloride structure is described as having a rhombohedral unit cell containing a single molecule, with the cations at special positions (0,0,0) and the anions at the points (u, u, u) and (-u, -u, -u) of space-group R3m.

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Section: Dislocations and Stacking Faultsmentioning

confidence: 96%

“…Examination by X-ray topographic methods [90] indicate that the dislocation density may fall as low as 100 cm -2 for the growth products.…”

Section: The Growth Of Layer Compoundsmentioning

confidence: 99%

Section: Dislocations and Stacking Faultsmentioning

confidence: 99%

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Growth and the Crystal Characteristics of Dichalcogenides Having Layer Structures

Balchin¹

1976

Crystallography and Crystal Chemistry of Materials With Layered Structures

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“…[12,13] Methods such as electroless deposition, [14] spray-pyrolysis, [15] low pressure [16] and plasma-assisted [17] CVD, chemical bath deposition, [18] vapor transport methods, [19] melt growth, [20] 4 ], where M is a Group IV element. [23] Thermogravimetric analysis and mass spectrometry data showed that [Sn(SR) 4 ] results in RS-SR in the gas phase, supporting the formation of disulfide during the CVD process.…”

Section: Introductionmentioning

confidence: 99%

Tribenzyltin(IV)chloride Thiosemicarbazones: Novel Single Source Precursors for Growth of SnS Thin Films

Bade

Garje

Niwate

et al. 2008

Chemical Vapor Deposition

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Tin sulfide (SnS) thin films are deposited using simple tin thiosemicarbazone complexes of the type Bz 3 SnCl(L) (L ¼ thiosemicarbazones of salicylaldehye and 4-chlorobenzaldehyde). Thin films are deposited using aerosol-assisted (AA) CVD in the range 375-475 8C. X-ray diffraction (XRD) shows the formation of SnS regardless of growth temperature and precursor type. Scanning electron microscope (SEM) images show that the films have wafer-like morphology, and the growth temperatures do not have a profound effect on morphology.

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“…Dagegen ist wenig bekannt tiber die Qualit/it yon Kristallen, die aus der Gasphase wachsen. Rimmington, Balchin & Tanner (1972) untersuchten Kristalle yon SnS2, ZrS2, TiS2, HfS2 und SnSe2, die durch Transportztichtung erhalten wurden, mit der Lang-Methode (Lang, 1958(Lang, , 1959. Die pl~itt-chenf6rmigen Kristalle zeigten geringe Versetzungsdichten.…”

Section: Introductionunclassified

Röntgentopographische und elektronenmikroskopische Untersuchung der Realstruktur von γ-In₂S₃-kristallen

Buck¹

1973

J Appl Cryst

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Crystals of 7-In2S3, a new modification of indium sulphide, grown by vapour transport, were studied by X-ray topography (Lang technique) and electron microscopy. The most frequent defects are dislocations with Burgers vector of the type b= [100]. Growth layers were also observed. Neither the dissociation of dislocations into partials nor any stacking faults could be detected. 7-In2S3 gradually decomposes in the electron microscope by loss of sulphur. This results in an agglomeration of point defects leading to stacking faults surrounded by dislocation loops with b parallel to [001]. EinleitungR6ntgentopographie und Elektronenmikroskopie ergS.nzen sich bei der Untersuchung der Realstruktur yon Kristallen. Beide Methoden eignen sich zur Bestimmung der Baufehler. Die r6ntgentopographischen Methoden erm6glichen zus~itzlich eine Aussage tiber die r~iumliche Verteilung der Baufehler im Kristall. Das Elektronenmikroskop bietet den Vorteil hoher Aufl6sung. Dies ist z.B. ftir die Beobachtung des Aufspaltens von Versetzungen erforderlich.Die meisten r6ntgentopographischen Untersuchungen sind an Kristallen durchgeftihrt worden, welche dutch L6sungs-oder SchmelzziJchtung hergestellt wurden. Dagegen ist wenig bekannt tiber die Qualit/it yon Kristallen, die aus der Gasphase wachsen. Rimmington, Balchin & Tanner (1972) untersuchten Kristalle yon SnS2, ZrS2, TiS2, HfS2 und SnSe2, die durch Transportztichtung erhalten wurden, mit der Lang-Methode (Lang, 1958(Lang, , 1959. Die pl~itt-chenf6rmigen Kristalle zeigten geringe Versetzungsdichten. Sic waren jedoch meist leicht gekriimmt, was sich bei r6ntgentopographischer Abbildung ohne automatische Braggwinkelsteuerung (van Mellaert & Schwuttke, 1970) Zusammenfassend kann gesagt werden, dass die Qualit/it yon aus der Gasphase gewachsenen 7-In2S3-Kristallen gut ist. Es existieren bis zu 1 mm z grosse versetzungsfreie Bereiche. Die Angabe einer Versetzungsdichte ist wegen der inhomogenen Verteilung der Versetzungen nicht sinnvoll.Die im obigen Abschnitt zusammengefassten Ergebnisse solten im folgenden durch r6ntgentopo-graphische Aufnahmen veranschaulicht werden. Fig. 1 Fig. 1, a und e in Fig. 2) zeigen dagegen keinen Kontrast. Fig. 4 Fig. 4 wegen g-b=0 nicht sichtbar). Ihre Entstehung wird, wie bei den Halbschleifen in Fig. 1 Die Ergebnisse der elektronenmikroskopischen Untersuchungen lassen sich anhand einiger Abbildungen verdeutlichen. Fig. 6(a) zeigt ein hexagonales Netzwerk undissoziierter Versetzungen mit bl, b2 und ba.In der linken Bildh/ilfte haben die Versetzungen reinen Schraubencharakter. In der oberen und unteren Bildh/ilfte erzeugen Extinktionsb/inder an einem Teil der Versetzungen Doppelbilder. Fig. 6(b) ist eine Dunkelfeldaufnahme mit dem Reflex 01T0. b~ ist nicht sichtbar. In Fig. 6(e) (Reflex 2~00) ist b2 nicht sichtbar. Deutlich ist das Doppelbild der Versetzungen innerhalb des Extinktionsbandes zu erkennen. Beim Durchqueren des Extinktionsbandes wechselt die Bildseite der Versetzungen. In Fig. 6(d) (Reflex 10T0) zeigen nur bl und b2 Kontrast.Wie bereits erw/ihnt,...

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Nearly perfect single crystals of layer compounds grown by iodine vapour-transport techniques

Cited by 89 publications

References 6 publications

Growth and the Crystal Characteristics of Dichalcogenides Having Layer Structures

Growth and the Crystal Characteristics of Dichalcogenides Having Layer Structures

Tribenzyltin(IV)chloride Thiosemicarbazones: Novel Single Source Precursors for Growth of SnS Thin Films

Röntgentopographische und elektronenmikroskopische Untersuchung der Realstruktur von γ-In₂S₃-kristallen

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Nearly perfect single crystals of layer compounds grown by iodine vapour-transport techniques

Cited by 89 publications

References 6 publications

Growth and the Crystal Characteristics of Dichalcogenides Having Layer Structures

Growth and the Crystal Characteristics of Dichalcogenides Having Layer Structures

Tribenzyltin(IV)chloride Thiosemicarbazones: Novel Single Source Precursors for Growth of SnS Thin Films

Röntgentopographische und elektronenmikroskopische Untersuchung der Realstruktur von γ-In2S3-kristallen

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Röntgentopographische und elektronenmikroskopische Untersuchung der Realstruktur von γ-In₂S₃-kristallen