Negative-bias temperature instability cure by process optimization

Scarpa, A.; Ward, D.E.; Dubois, Jérôme; Marwijk, L. van; Gausepohl, S. C.; Campos, Rafael; Sim, Kwang Ye; Cacciato, A.; Kho, Ramun M.; Bolt, M.

doi:10.1109/ted.2006.873884

Cited by 13 publications

(6 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It was reported that thick gate transitors are the most critical devices with respect to NBTI. Thick gate transistors degraded faster than the thin gate transistors during the circuit operation because the thick gate transistor fabrication is with double oxidization and the dual gate oxidation process may not be optimized for stress hardness [10]. As a result, in our paper, the NBTI (bias-temperature) test was mainly studied on 3.3V PMOS transistor with dimensions 9/0.322 and 9/0.376 (um/um, W/L) and the stressed gate voltage is equal to -3.6V and V s /V d /V sub is grounded.…”

Section: Methodsmentioning

confidence: 99%

Influence of hydrogen annealing on NBTI performance

Jin¹,

Kuan²,

Sim³

et al. 2008

2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits

View full text Add to dashboard Cite

The effect of hydrogen annealing after Local Interconnect Layer (LIL) formation and before Contact/Metal was evaluated with negative bias temperature instability (NBTI), electrical testing and yield in 0.14μm embedded flash. No significant difference was observed in electrical testing and yield amongst all splits. However, difference was observed from NBTI test. This paper mainly summarizes the influence of hydrogen annealing on NBTI performance.

show abstract

Section: Methodsmentioning

confidence: 99%

Influence of hydrogen annealing on NBTI performance

Jin¹,

Kuan²,

Sim³

et al. 2008

2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits

View full text Add to dashboard Cite

show abstract

“…Fluorine incorporated into the gate oxide can improve NBTI. [17][18][19][20][21][22][23][24][25] Fluorine implanted in the polycrystalline silicon (poly-Si) gate and source=drain (S=D) region creates Si-F bonds, which have higher binding energy, at the SiO 2 =Si interface by annealing. [26][27][28][29] These bonds are stable against NBTI stress.…”

Section: Introductionmentioning

confidence: 99%

Revisited study of fluorine implantation impact on negative bias temperature instability for input/output device of automotive micro controller unit

Yoshida¹,

Maekawa²,

Tsuda³

et al. 2018

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

We investigate the effect of fluorine implanted in the polycrystalline silicon (poly-Si) gate and source/drain (S/D) region on negative bias temperature instability (NBTI) improvement. It is found that there is a trade-off implantation energy dependence of NBTI between fluorine in the poly-Si gate and that in the S/D region. Fluorine implanted in the poly-Si gate contributes to NBTI improvement under low energy implantation. On the other hand, NBTI is improved by fluorine implanted in the S/D region under high energy. We propose that the two-step implantation process with high and low energy is the optimum condition for NBTI improvement.

show abstract

“…Scarpa et al in [19] suggested several process optimization techniques (e.g. oxide nitridation, adding fluorine to gate oxide etc.)…”

Section: Introductionmentioning

confidence: 99%

ReverseAge: An online NBTI combating technique using time borrowing

Khan

Hamdioui

2011

2011 IEEE 6th International Design and Test Workshop (IDT)

View full text Add to dashboard Cite

As semiconductor manufacturing has entered into the nanoscale era, Negative Bias Temperature Instability (NBTI) has become one of the most significant aging mechanisms leading to reliability issues. This paper presents ReverseAge, a technique that detects delay due to NBTI and utilizes design timing margins to ensure reliable circuit operation. First, it presents a scheme to detect the NBTI induced delay. Second, it presents a technique to tolerate the errors; the technique exploits the available design timing margins to compensate for the NBTI induced delay. The evaluation of ReverseAge has been performed by integrating it in an ISCAS-89 benchmark circuit. The simulation results show 3× reliability improvements with respect to state-of-the-art. The improvement comes at the cost of 3.77% area and 1.4% power overheads.

show abstract

Negative-bias temperature instability cure by process optimization

Cited by 13 publications

References 30 publications

Influence of hydrogen annealing on NBTI performance

Influence of hydrogen annealing on NBTI performance

Revisited study of fluorine implantation impact on negative bias temperature instability for input/output device of automotive micro controller unit

ReverseAge: An online NBTI combating technique using time borrowing

Contact Info

Product

Resources

About