Negative capacitance (impedance of the inductive type) of silicon p
                     +-n junctions irradiated with fast electrons

Poklonski, N. A.; Shpakovski, S. V.; Горбачук, Н. И.; Ластовский, С. Б.

doi:10.1134/s1063782606070128

Cited by 17 publications

(9 citation statements)

References 14 publications

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“…Maximum value L at Ufor is ≈50 H. Given value is considerably more than the magnitude of film planar helix inductances is≈15 H having a maximum diameter of helix no more than 10 mm and number of turns is no less than 100 used in integrated microelectronic circuits [9].…”

Section: Resultsmentioning

confidence: 96%

Negative Capacitance on Silicon Avalanche Photodiodes with Deeply Buried Micropixels

Jafarova

Sadygov

Dovlatov

et al. 2018

EJERS

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There have been investigated reactive properties of silicon avalanche photodiodes (MAPD- Micropixel Avalanche Photodiode) with deeply buried micropixels (amplification channels) within AC signal frequencies f= (50-500) kHz.By experiment is found out that measured capacitance of structures involving three p-n junctions in section passing through the pixels increases exponentially with Ufor (negative potential is applying to n-Si substrate) reaches maximum and at certain value Ufor= Uinv changes the sign becoming the negative capacitance (equivalent inductance).The magnitude of active component of complete conduction G grows with the applied voltage and reaches maximum value ~70 mS at Ufor= 1,0 V (f=500 kHz). There has been calculated difference in phase j appearing between current and voltage and it is shown that at Ufor=0 V the j = 80o and passes through the zero at Ufor = 0,55 V. The magnitude of negative capacitance recalculated to the inductance value with the growth of forward bias being decreased sharply tends to the saturation.

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Section: Resultsmentioning

confidence: 96%

Negative Capacitance on Silicon Avalanche Photodiodes with Deeply Buried Micropixels

Jafarova

Sadygov

Dovlatov

et al. 2018

EJERS

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“…3. This phenomenon of "negative" capacitance is relatively well known from the literature although its mechanism is not clear [21][22][23][24][25][26].…”

Section: Resultsmentioning

confidence: 99%

Long time stability of ITO/NiPc/ZnO/Al devices with ZnO buffer layer formed by atomic layer deposition technique–impedance spectroscopy analysis

Stakhira¹,

Grygorchak²,

Cherpak³

et al. 2010

Materials Science and Engineering: B

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“…The phenomenon of negative capacity is well known from the literature, though its mechanism is not fully understood and seems to be brought about by different processes [22][23][24]. Most often, it is associated with the capture of injected carriers and their retention by trapping centers over time commensurate with the half-period of a sinusoidal signal [25,26]. According to the second, more general mechanism, an inductive behavior appears when current, flowing between the two phases separated by a quantum well, is determined by an filled intermediate state, which decreases as the applied potential is increased.…”

Section: Resultsmentioning

confidence: 99%

Structures with alternate semiconductor and nematic nanolayers: formation, properties, application

Іващишин¹,

Grigorchak²,

Mikityuk³

et al. 2010

Russ Phys J

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The purpose of this work was to form a periodic multilayer structure with alternate heterophase and heteroaggregate nanolayers using intercalation techniques. The investigation was concerned with layered semiconductor gallium selenide. The stages of formation of a liquid GaSe crystal are described. The results of examination of the obtained samples by the methods of X-ray diffraction and impedance spectroscopy are discussed. The structures of impedance models are given.

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Negative capacitance (impedance of the inductive type) of silicon p +-n junctions irradiated with fast electrons

Cited by 17 publications

References 14 publications

Negative Capacitance on Silicon Avalanche Photodiodes with Deeply Buried Micropixels

Negative Capacitance on Silicon Avalanche Photodiodes with Deeply Buried Micropixels

Long time stability of ITO/NiPc/ZnO/Al devices with ZnO buffer layer formed by atomic layer deposition technique–impedance spectroscopy analysis

Structures with alternate semiconductor and nematic nanolayers: formation, properties, application

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