Negative capacitance peculiarities in a-Si:H/c-Si rectifier structure

Kavasoğlu, A. Sertap; Kavasoğlu, Neşe; Kodolbaş, Alp Osman; Birgi, Ozcan; Öktü, Ö.; Oktik, Ş.

doi:10.1016/j.mee.2009.06.001

Cited by 15 publications

(12 citation statements)

References 34 publications

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“…According to Wu et al [31] such behavior of C in the accumulation region can be explained by the loss of interface charges localized at M/S interface due to impact ionization process. Similar results of the NC behavior have been reported in the literature [11,[27][28][29][30][31][32][33]. In addition, it is believed that the NC caused by the injection of minority carriers can be observed only in forward bias voltage region [33][34][35].…”

Section: Resultssupporting

confidence: 89%

“…As can be seen in Fig. 3a, the value of C generally increases with increasing applied bias voltage and reaches a peak value for each frequency in a certain voltage region due to the effect of D it and R s [12,16,18,[27][28][29]. After the peak value, at low frequencies (f B 70 kHz), C value decreases rapidly and then approaches to negative values.…”

Section: Resultsmentioning

confidence: 82%

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Investigation of negative dielectric constant in Au/1 % graphene (GP) doped-Ca1.9Pr0.1Co4Ox/n-Si structures at forward biases using impedance spectroscopy analysis

Çetinkaya

Alialy

Altındal

et al. 2015

J Mater Sci: Mater Electron

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The dielectric properties of Au/(1 % graphene doped-Ca 1.9 Pr 0.1 Co 4 O x )/n-Si structures were investigated by the impedance spectroscopy method including capacitance-voltage (C-V) and conductance-voltage (G/x-V) measurements in the frequency range of 10-2 MHz at room temperature. The experimental results show that the real and imaginary parts of dielectric constant (e 0 , e 00 ) and electric modulus (M 0 and M 00 ), and ac electrical conductivity (r ac ) are a strong functions of frequency and voltage, both. Negative dielectric constant behavior was observed at sufficiently high forward bias voltages at low frequencies and it was attributed to the interfacial polarization, interface traps and series resistance. e 0 decreases with increasing frequency at sufficiently high biases whereas e 00 increases. Since interfacial polarization and interface states, both, can follow the ac external signal easily at low frequencies, there occurs a contribution to the measured capacitance and conductance. The negative values of e 0 correspond to maximum value of e 00 . Such contrary behavior in the e 0 and e 00 appears as an abnormality when compared to the conventional behavior metal-semiconductor structures with and without interfacial layer. Experimental results confirmed that the dielectric properties of these structures are quite sensitive to the frequency and applied bias voltage, both, especially at low frequencies and high voltages because of density distribution of interface states and interfacial polarization.

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Section: Resultssupporting

confidence: 89%

Section: Resultsmentioning

confidence: 82%

Investigation of negative dielectric constant in Au/1 % graphene (GP) doped-Ca1.9Pr0.1Co4Ox/n-Si structures at forward biases using impedance spectroscopy analysis

Çetinkaya

Alialy

Altındal

et al. 2015

J Mater Sci: Mater Electron

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“…However, in 50 nm thicknesses Si3N4 layer; there are no seeing peaks at the G-V plots. This conclusion attributed also increasing native layer effect [11], [14]. is given depending conductance and capacitance by:…”

Section: Resultsmentioning

confidence: 88%

The thickness effect of insulator layer between the semiconductor and metal contact on C-V characteristics of Al/Si3N4/p-Si device

Orak¹,

Koçyiğit²

2017

Pamukkale J Eng Sci

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“…a-Si:H has become the material of choice for the active layer in thin-film transistors (TFTs), which are most widely used in largearea electronics applications, mainly for liquid-crystal displays (LCDs). Recently, heterojunction devices, which include a-Si:H material as an active layer, have become very popular to provide tunable operating voltage for low power devices due to easy fabrication process as a very thin layer [1][2][3][4][5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

“…The formation of device structure strongly effects to the performance and stability of these devices [9]. In spite of these numerous studies, more work is needed to understand the fundamental characteristics of a-Si:H/c-Si heterojunction diode structures and the key factors required to improve their electronic quality.…”

Section: Introductionmentioning

confidence: 99%