Negative differential resistance in bilayer graphene nanoribbons

Habib, K. M. Masum; Zahid, Ferdows; Lake, Roger K.

doi:10.1063/1.3590772

Cited by 54 publications

(47 citation statements)

References 30 publications

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“…A similar junction (monolayer-bilayer junction) was proposed in previous works and its electronic and transport properties were investigated even under applied biases 36,[40][41][42][43][44] . The number of armchair rows along x direction, N x , defines a BLG length and the number of zigzag rows along y direction, N y , defines a BLG width.…”

Section: Resultsmentioning

confidence: 99%

Giant magnetoresistance in bilayer graphene nanoflakes

Farghadan

Farekiyan

2016

Solid State Communications

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Coherent spin transport through bilayer graphene (BLG) nanoflakes sandwiched between two electrodes made of single-layer zigzag graphene nanoribbon was investigated by means of Landauer-Buttiker formalism. Application of a magnetic field only on BLG structure as a channel produces a perfect spin polarization in a large energy region. Moreover, the conductance could be strongly modulated by magnetization of the zigzag edge of AB-stacked BLG, and the junction, entirely made of carbon, produces a giant magnetoresistance (GMR) up to 10 6 %. Intestinally, GMR and spin polarization could be tuned by varying BLG width and length. Generally, MR in a AB-stacked BLG strongly increases (decreases) with length (width).

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Section: Resultsmentioning

confidence: 99%

Giant magnetoresistance in bilayer graphene nanoflakes

Farghadan

Farekiyan

2016

Solid State Communications

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“…When the SymFET scales down to 50 nm or less, momentum conservation does not scale well with device size. The scaling limits of SymFET will be a subject of future study; the quantum confinement and quantized transverse momentum in graphene nanoribbon also need to be considered near scaling limits, as discussed in [13].…”

Section: Resultsmentioning

confidence: 99%

SymFET: A Proposed Symmetric Graphene Tunneling Field-Effect Transistor

Zhao

Feenstra

et al. 2013

IEEE Trans. Electron Devices

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Abstract-In this paper, an analytical model for calculating the channel potential and current-voltage characteristics in a symmetric tunneling field-effect transistor (SymFET) is presented. The current in a SymFET flows by tunneling from an n-type graphene layer to a p-type graphene layer. A large current peak occurs when the Dirac points are aligned at a particular drain-tosource bias V DS . Our model shows that the current of the SymFET is very weakly dependent on temperature. The resonant current peak is controlled by chemical doping and applied gate bias. The on/off ratio increases with graphene coherence length and doping. The symmetric resonant peak is a good candidate for high-speed analog applications and can enable digital logic similar to the BiSFET. Our analytical model also offers the benefit of permitting simple analysis of features such as the full-width at half-maximum (FWHM) of the resonant peak and higher order harmonics of the nonlinear current. The SymFET takes advantage of the perfect symmetry of the band structure of 2-D graphene, a feature that is not present in conventional semiconductors.

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“…However, for integrated circuits a low bias mV regime is desirable to reduce power consumption 46 . Low bias NDR can also be achieved in other graphene and bilayer graphene systems [31][32][33] . In this work we consider an N -barrier superlattice potential on a semiconducting armchair graphene nanorib- bon (aGNR), Fig.…”

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confidence: 98%

Low-bias negative differential resistance in graphene nanoribbon superlattices

et al. 2011

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We theoretically investigate negative differential resistance (NDR) for ballistic transport in semiconducting armchair graphene nanoribbon (aGNR) superlattices (5 to 20 barriers) at low bias voltages VSD < 500 mV. We combine the graphene Dirac hamiltonian with the Landauer-Büttiker formalism to calculate the current ISD through the system. We find three distinct transport regimes in which NDR occurs: (i) a "classical" regime for wide layers, through which the transport across bandgaps is strongly suppressed, leading to alternating regions of nearly unity and zero transmission probabilities as a function of VSD due to crossing of bandgaps from different layers. (ii) a quantum regime dominated by superlattice miniband conduction, with current suppression arising from the misalignment of miniband states with increasing VSD; and (iii) a Wannier-Stark ladder regime with current peaks occurring at the crossings of Wannier-Stark rungs from distinct ladders. We observe NDR at voltage biases as low as 10 mV with a high current density, making the aGNR superlattices attractive for device applications.

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Negative differential resistance in bilayer graphene nanoribbons

Cited by 54 publications

References 30 publications

Giant magnetoresistance in bilayer graphene nanoflakes

Giant magnetoresistance in bilayer graphene nanoflakes

SymFET: A Proposed Symmetric Graphene Tunneling Field-Effect Transistor

Low-bias negative differential resistance in graphene nanoribbon superlattices

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