Negative Differential Resistance in GaN/AlN Heterostructure Nanowires

Abstract

Abstract-III-V semiconductor nanowire heterostructures have experienced great progress in numerous mid

Gate-Tunable Electron Transport Phenomena in Al–Ge⟨111⟩–Al Nanowire Heterostructures

“…In some nanoscale systems, the astounding phenomenon of NDR has been observed. 5 , 6 This nonlinear electron transport phenomenon may enable fast switching logic circuits, static memory cells, or high-frequency oscillators. 7 − 9 Although several groups reported NDR in semiconductors at cryogenic temperatures, 10 , 11 it is rarely observed at room temperature except for the well-known Gunn effect in GaAs.…”

“…In some nanoscale systems, the astounding phenomenon of NDR has been observed. , This nonlinear electron transport phenomenon may enable fast switching logic circuits, static memory cells, or high-frequency oscillators. − Although several groups reported NDR in semiconductors at cryogenic temperatures, , it is rarely observed at room temperature except for the well-known Gunn effect in GaAs . With regard to the above-mentioned future technological applications, it would be highly desirable to obtain NDR in complementary metal-oxide-semiconductor compatible materials at standard conditions and to control the effect by an electric field.…”