To fully exploit the potential of semiconducting nanowires for devices, high quality electrical contacts are of paramount importance. This work presents a detailed in situ transmission electron microscopy (TEM) study of a very promising type of NW contact where aluminum metal enters the germanium semiconducting nanowire to form an extremely abrupt and clean axial metal–semiconductor interface. We study this solid-state reaction between the aluminum contact and germanium nanowire in situ in the TEM using two different local heating methods. Following the reaction interface of the intrusion of Al in the Ge nanowire shows that at temperatures between 250 and 330 °C the position of the interface as a function of time is well fitted by a square root function, indicating that the reaction rate is limited by a diffusion process. Combining both chemical analysis and electron diffraction we find that the Ge of the nanowire core is completely exchanged by the entering Al atoms that form a monocrystalline nanowire with the usual face-centered cubic structure of Al, where the nanowire dimensions are inherited from the initial Ge nanowire. Model-based chemical mapping by energy dispersive X-ray spectroscopy (EDX) characterization reveals the three-dimensional chemical cross-section of the transformed nanowire with an Al core, surrounded by a thin pure Ge (∼2 nm), Al2O3 (∼3 nm), and Ge containing Al2O3 (∼1 nm) layer, respectively. The presence of Ge containing shells around the Al core indicates that Ge diffuses back into the metal reservoir by surface diffusion, which was confirmed by the detection of Ge atoms in the Al metal line by EDX analysis. Fitting a diffusion equation to the kinetic data allows the extraction of the diffusion coefficient at two different temperatures, which shows a good agreement with diffusion coefficients from literature for self-diffusion of Al.

The adsorption of CO 2 on the Fe 3 O 4 (001)-( √ 2 × √ 2)R45 • surface was studied experimentally using temperature programmed desorption (TPD), photoelectron spectroscopies (UPS and XPS), and scanning tunneling microscopy. CO 2 binds most strongly at defects related to Fe 2+ , including antiphase domain boundaries in the surface reconstruction and above incorporated Fe interstitials. At higher coverages, CO 2 adsorbs at fivefold-coordinated Fe 3+ sites with a binding energy of 0.4 eV. Above a coverage of 4 molecules per (• unit cell, further adsorption results in a compression of the first monolayer up to a density approaching that of a CO 2 ice layer. Surprisingly, desorption of the second monolayer occurs at a lower temperature (≈84 K) than CO 2 multilayers (≈88 K), suggestive of a metastable phase or diffusion-limited island growth. The paper also discusses design considerations for a vacuum system optimized to study the surface chemistry of metal oxide single crystals, including the calibration and characterisation of a molecular beam source for quantitative TPD mea-

The prospect of pileup induced backgrounds at the High Luminosity LHC (HL-LHC) has stimulated intense interest in developing technologies for charged particle detection with accurate timing at high rates. The required accuracy follows directly from the nominal interaction distribution within a bunch crossing (σ z ∼ 5 cm, σ t ∼ 170 ps). A time resolution of the order of 20-30 ps would lead to significant reduction of these backgrounds. With this goal, we present a new detection concept called PICOSEC, which is based on a "two-stage" Micromegas detector coupled to a Cherenkov radiator and equipped with a pho- * tocathode. First results obtained with this new detector yield a time resolution of 24 ps for 150 GeV muons, and 76 ps for single photoelectrons.

Single-crystal Al nanowires (NWs) were fabricated by thermally induced substitution of vapor-liquid-solid grown Ge NWs by Al. The resistivity of the crystalline Al (c-Al) NWs was determined to be ρ = (131 ± 27) × 10(-9) Ω m, i.e. approximately five times higher than for bulk Al, but they withstand remarkably high current densities of up to 1.78 × 10(12) A m(-2) before they ultimately melt due to Joule heating. The maximum current density before failure correlates with the NW diameter, with thinner NWs tolerating significantly higher current densities due to efficient heat dissipation and the reduced lattice heating in structures smaller than the electron-phonon scattering length. The outstanding current-carrying capacity of the c-Al NWs clearly exceeds those of common conductors and surpasses requirements for metallization of future high-performance devices. The linear temperature coefficient of the resistance of c-Al NWs appeared to be lower than for bulk Al and a transition to a superconducting state in c-Al NWs was observed at a temperature of 1.46 K.

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