Negative Differential Resistance in InGaAs/InAlAs Nanoscale In-Plane Structures

Abstract

Nanoscale in-plane structure devices are fabricated by electron beam lithography followed by electron cyclotron resonance reactive ion etching. We investigate the negative differential resistance (NDR) of InGaAs/InAlAs in-plane structure devices. The NDR appears in the current–voltage (I–V) characteristics of simple two-terminal in-plane short-channel devices. NDR characteristics depend on the effective channel width of in-plane gate transistors and become more pronounced when the channel conductance is increased by applying gate voltages. In a short-channel in-plane gate transistor, a more prominent NDR is observed and the NDR appears even at room temperature. In addition, the NDR onset voltage shifts to lower voltages when the channel length decreases. The NDR phenomenon is most likely caused by the real-space transfer of electrons from a high mobility channel to a low mobility layer.

Electrical characteristics of in‐plane gate logic devices

“…In case of our device design, gatechannel separation has been done by forming a groove between the channel and the gate. IPG devices can be operated as logic devices [8][9][10], rectifier [11][12][13], negative differential resistance devices [14,15] and other functional devices. Therefore, various devices with different functions can be integrated on the same wafer.…”

Operating Principle and Integration of In-Plane Gate Logic Devices

“…One concept for a promising semiconductor device is the in-plane gate (IPG) device [1,2]. IPG devices can be operated as logic devices [3], rectifier [4], negative differential resistance device [5] and other functional devices. IPG devices with various functions can be integrated on the same wafer.…”

Negative differential resistance characteristics of nanoscale in‐plane gate devices

“…In the following, this drainsource voltage where current peak appears is referred to as the NDR onset voltage. The detailed characteristic has been submitted elsewhere [13]. transfer (RST) of electrons from the high mobility channel (InGaAs) to the low mobility layer (InAlAs) by tunnelling.…”