Negative differential resistance characteristics of nanoscale in‐plane gate devices

Komatsuzaki, Yuji; Higashi, Kazuhiro; Kyougoku, Tomoteru; Onomitsu, Koji; Horíkoshi, Yoshiji

doi:10.1002/pssc.201000492

Cited by 3 publications

(3 citation statements)

References 8 publications

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“…In case of our device design, gatechannel separation has been done by forming a groove between the channel and the gate. IPG devices can be operated as logic devices [8][9][10], rectifier [11][12][13], negative differential resistance devices [14,15] and other functional devices. Therefore, various devices with different functions can be integrated on the same wafer.…”

Section: Introductionmentioning

confidence: 99%

Electrical characteristics of in‐plane gate logic devices

Komatsuzaki¹,

Kyougoku²,

Saba³

et al. 2011

Phys. Status Solidi C

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Logic devices based on in‐plane gate (IPG) transistors are realized and their electrical characteristics are investigated. An IPG transistor connected in series with a resistance functions as a logic device. In this work, we present logic devices based on lateral gate structures using an additional IPG transistor as a variable resistance. The logic device is formed by an in‐plane double gate transistor connected in series with a self‐gating transistor as a variable resistance. It shows clear input‐output characteristics as a logic device. Either NAND or NOR operation can be achieved by changing the width of the self‐gating transistor. The operation of IPG logic devices depends on the resistance ratio of the two transistors. By using IPG transistors as variable resistances, the Hi/Low ratio is high enough for reliable logic operations. Furthermore, it is shown that the number of terminals and wiring are considerably reduced by using our IPG logic devices compared to logic devices based on CMOS transistors. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Introductionmentioning

confidence: 99%

Electrical characteristics of in‐plane gate logic devices

Komatsuzaki¹,

Kyougoku²,

Saba³

et al. 2011

Phys. Status Solidi C

Self Cite

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show abstract

“…However, fabrication of these junctionless FETs is still rather challenging. As an interesting concept for promising functional devices, in-plane gate transistors have been developed as logic devices, 13 rectifier, 14,15 negative differential resistance devices, 16 etc. Laser scribing process was also proposed for source/drain patterning.…”

mentioning

confidence: 99%

Laser directly written junctionless in-plane-gate neuron thin film transistors with AND logic function

Zhu

Zhou

et al. 2013

Applied Physics Letters

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Junctionless oxide-based neuron thin-film transistors with in-plane-gate structure are fabricated at room temperature by a laser scribing process. The neuron transistors are composed of a bottom indium-tin-oxide floating gate and multiples of in-plane control gates. The control gates, coupling with the floating gate, control the “on” and “off” of the transistor. Effective field-effect modulation of the drain current has been realized. AND logic is demonstrated on a dual in-plane gate neuron transistor. The developed laser scribing technology is highly desirable in terms of the fabrication of high performance neuron transistors with low-cost.

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“…2-8 IPG devices can be operated as logic devices, [9][10][11] rectifier, 12-15 negative differential resistance devices, 16,17 and other functional devices. IPG devices with various functions can be integrated on the same wafer.…”

mentioning

confidence: 99%