Phosphorus (P)-doped nanogranular SiO(2) films are deposited by plasma-enhanced chemical vapor deposition at room temperature, and a high proton conductivity of ~5.6 × 10(-4) S cm(-1) is measured at room temperature with a relative humidity of 70%. The accumulation of protons at the SiO(2)/indium-zinc-oxide (IZO) interface induces a large electric-double-layer (EDL) capacitance. Thin-film transistors (TFTs) with two in-plane gates are self-assembled on transparent conducting glass substrates. The large EDL capacitance can effectively modulate the IZO channel with a current ON/OFF ratio of >10(7). Such TFTs calculate dual input signals at the gate level coupled with a floating gate, analogous to that of neuron MOS (vMOS). AND logic is demonstrated on the neuron TFTs. Such neuron TFTs gated by P-doped nanogranular SiO(2) shows an effective electrostatic modulation on conductivities of oxide semiconductors, which is meaningful for portable chemical-biological sensing applications.

Artificial synapse is the key element for neuromorphic systems. Recently, synaptic transistors have been proposed and investigated, but physical understanding of such synaptic devices based on ion/electron electrostatic coupling effect remains unknown. Here, laterally coupled InGaZnO 4 electric-double-layer synaptic transistors were numerically simulated. An ion drift-diffusion model is employed to describe the laterally capacitive coupling of the proton conducting electrolyte. Important synaptic behaviors, such as excitatory postsynaptic current and paired-pulse facilitation, are mimicked by the transient solution. InGaZnO 4 synaptic device exhibits an extremely low-power consumption of ∼0.2 pJ/spike. Our simulation results are interesting for energy-efficient synaptic electronics and neuromorphic systems. IndexTerms-Laterally-coupled synaptic transistors, electric-double-layer, ion drift-diffusion model.

PRKCZ gene may be associated with type 2 diabetes in Han population in North China. The haplotypes at five SNP sites in this gene may be responsible for this association.

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