Negative Differential Resistance in ZnO Nanowires Bridging Two Metallic Electrodes

Zhi‐Jian, Yang; Lee, Ching-Ting

doi:10.1007/s11671-010-9667-1

Cited by 16 publications

(13 citation statements)

References 17 publications

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“…Moreover, due to the cylindrical geometry and high surface-to-volume ratio of nanorod, the surface effect can penetrate deep into the nanorod, thus the surface effect can largely affect the conduction property of nanorod. Therefore, the charging and discharging through the nanoscale contacts between ZnO nanorods and metal electrodes may be the reason for the NDR [4]. The bias dependent shift of peak position and the increase of peak-to-valley current ratio can also justify the proposed mechanism of charge trapping and de-trapping taking place at the interface.…”

Section: Resultsmentioning

confidence: 97%

“…This NDR effect can be obtained from low dimensional structures like a molecular wire when connected between two metal electrodes [4] and it can be used as active elements for the fabrication of resonant tunneling diodes. Many reports are available on transport study of CNT and other organic molecular based nanoscale junctions, but the inorganic nanostructures such as nanorods, nanotubs and nanowires based works are limited to date.…”

Section: Introductionmentioning

confidence: 99%

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Observation of room temperature negative differential resistance in solution synthesized ZnO nanorod

Kathalingam

Kim

Park

et al. 2015

Physica E: Low-dimensional Systems and Nanostructures

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Section: Resultsmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Observation of room temperature negative differential resistance in solution synthesized ZnO nanorod

Kathalingam

Kim

Park

et al. 2015

Physica E: Low-dimensional Systems and Nanostructures

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“…A recent report shows that the NDR can depend on the starting voltage when a scan is done [25]. In order to see whether NDR phenomenon in our device depends on the starting voltage, we started the sweep from zero bias instead of −10 or +10 V. This scan is presented in Fig.…”

Section: Resultsmentioning

confidence: 99%

Negative differential resistance in ZnO coated peptide nanotube

et al. 2013

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We investigate the room temperature electronic transport properties of a zinc oxide (ZnO) coated peptide nanotube contacted with Au electrodes. Current–voltage (I–V ) characteristics show asymmetric negative differential resistance (NDR) behavior along with current rectification. The NDR phenomenon is observed in both negative and positive voltage sweep scans, and found to be dependent on the scan rate and humidity. Our results suggest that the NDR is due to protonic conduction arising from water molecule redox reaction on the surface of ZnO coated peptide nanotubes rather than the conventional resonant tunneling mechanism.

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“…Unfortunately, these methods are not always compliant with post-processing on CMOS because of the need of chemical processes at high temperature that can cause rediffusion of the active area of CMOS transistors or deformations in the metal of interconnections. An easier technique is based on the drop casting of NWs onto a large area of interdigitated microelectrodes [11]. The probability of a successful integration is only proportional to the metal electrodes area and the number of nanowires per area.…”

Section: Introductionmentioning

confidence: 99%

A Multipurpose CMOS Platform for Nanosensing

Bonanno

Sanginario

Miccoli

et al. 2016

Sensors

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This paper presents a customizable sensing system based on functionalized nanowires (NWs) assembled onto complementary metal oxide semiconductor (CMOS) technology. The Micro-for-Nano (M4N) chip integrates on top of the electronics an array of aluminum microelectrodes covered with gold by means of a customized electroless plating process. The NW assembly process is driven by an array of on-chip dielectrophoresis (DEP) generators, enabling a custom layout of different nanosensors on the same microelectrode array. The electrical properties of each assembled NW are singularly sensed through an in situ CMOS read-out circuit (ROC) that guarantees a low noise and reliable measurement. The M4N chip is directly connected to an external microcontroller for configuration and data processing. The processed data are then redirected to a workstation for real-time data visualization and storage during sensing experiments. As proof of concept, ZnO nanowires have been integrated onto the M4N chip to validate the approach that enables different kind of sensing experiments. The device has been then irradiated by an external UV source with adjustable power to measure the ZnO sensitivity to UV-light exposure. A maximum variation of about 80% of the ZnO-NW resistance has been detected by the M4N system when the assembled 5 μm × 500 nm single ZnO-NW is exposed to an estimated incident radiant UV-light flux in the range of 1 nW–229 nW. The performed experiments prove the efficiency of the platform conceived for exploiting any kind of material that can change its capacitance and/or resistance due to an external stimulus.

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Negative Differential Resistance in ZnO Nanowires Bridging Two Metallic Electrodes

Cited by 16 publications

References 17 publications

Observation of room temperature negative differential resistance in solution synthesized ZnO nanorod

Observation of room temperature negative differential resistance in solution synthesized ZnO nanorod

Negative differential resistance in ZnO coated peptide nanotube

A Multipurpose CMOS Platform for Nanosensing

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