Observation of room temperature negative differential resistance in solution synthesized ZnO nanorod

Kathalingam, A.; Kim, Sam-Dong; Park, Hyung-Moo; Park, Hyun‐Chang

doi:10.1016/j.physe.2015.06.030

Cited by 5 publications

(6 citation statements)

References 11 publications

(11 reference statements)

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“…The negative differential resistance properties are observed on various materials with different morphology such as ZnO nanorod, porous silicon devices and graphene nanoribbon FET [38,64,65]. The NDR property of NiFe 2 O 4 nanowire device is similar to the reported works, which further strengthens the present work.…”

Section: I-v Characteristics Of Nife 2 O 4 Nanowire Devicesupporting

confidence: 89%

Investigation on nickel ferrite nanowire device exhibiting negative differential resistance — a first-principles investigation

Nagarajan¹,

Chandiramouli²

2017

Condens. Matter Phys.

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The electronic property of NiFe 2 O 4 nanowire device is investigated through nonequilibrium Green's functions (NEGF) in combination with density functional theory (DFT). The electronic transport properties of NiFe 2 O 4 nanowire are studied in terms of density of states, transmission spectrum and I-V characteristics. The density of states gets modified with the applied bias voltage across NiFe 2 O 4 nanowire device, the density of charge is observed both in the valence band and in the conduction band on increasing the bias voltage. The transmission spectrum of NiFe 2 O 4 nanowire device gives the insights on the transition of electrons at different energy intervals. The findings of the present work suggest that NiFe 2 O 4 nanowire device can be used as negative differential resistance (NDR) device and its NDR property can be tuned with the bias voltage, which may be used in microwave device, memory devices and in fast switching devices.

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Section: I-v Characteristics Of Nife 2 O 4 Nanowire Devicesupporting

confidence: 89%

Investigation on nickel ferrite nanowire device exhibiting negative differential resistance — a first-principles investigation

Nagarajan¹,

Chandiramouli²

2017

Condens. Matter Phys.

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“…During bias sweep from 0 V → −2 V (sweep 3), the current in the LRS raises until −0.8 V (for 200 nm CS, figure 2(f)) but decreases with a further increase in bias. This is a characteristic of NDR behavior, often observed in organic memory devices [38][39][40][41]. While increasing bias from −2 V → 2 V (sweep 4, 5), the device makes a transition to HRS.…”

Section: Resultsmentioning

confidence: 81%

“…To explore NDR in our devices, we also performed I-V measurements for the device with a 200 nm thick CS layer with the variations in voltage step (or scan rate) and bias stress, which is displayed in figures 3(a) and (b). The property of decreasing current with increasing applied bias (at different scan rates) is attributed to the NDR nature, which is highly desired for high-frequency applications [41,50]. The peak current (NDR peak) of the devices near −0.45 V (figure 3(a)) improved from 8 nA to 55 nA with the voltage step variation (0.005 V to 0.25 V).…”

Section: Resultsmentioning

confidence: 99%

Chitosan based memory devices: filamentary versus interfacial resistive switching

Kiran

Yadav

Singh

2021

J. Phys. D: Appl. Phys.

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Biopolymer-based memory devices have a multitude of potential applications in biomedical research. In this paper, we demonstrate the tunable memory behavior of the chitosan (CS) based memory devices as a function of CS thickness using the device structure of ITO/CS/Cu. Also, a clear distinction between filamentary and interfacial resistive switching was witnessed. High on/off ratios of 1870 and 1280 were observed in the filamentary resistive switching (for CS thickness of 80 nm) and interfacial resistive switching (for CS thickness of 200 nm) modes, respectively. The switching mechanism has also been analyzed using linear fit analysis and attributed to the formation and rupture of the conducting filaments, and charge accumulation at the metal/CS interface. This study opens up the possibility of developing write-once-read-many and read-and-write (RWM) random access memory devices.

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“…Noticeably, the NDR phenomenon became slightly weak and the PVCR decreased at a higher temperature of 80 • C or even disappeared completely at 120 • C. Typically, the effect of NDR is observed at lower temperatures, and the carriers can tunnel from the diamond valence band to the ZnO defect band at 20 and 80 • C (Figures 4A,B). While at 120 • C, PVCR is reduced and, thus, leads to the disappearance of NDR due to enhanced thermionic emission current and variation of energy band (Kathalingam et al, 2015). As shown in the schematic energy band diagram (Figure 4C), the Fermi level moved up and entered into the bandgap at 120 • C. The n-ZnO NRs and p-degenerated diamond semiconductor were approaching the intrinsic semiconductor.…”

Section: Resultsmentioning

confidence: 97%

“…Typically, the effect of NDR is observed at lower temperatures, and the carriers can tunnel from the diamond valence band to the ZnO defect band at 20 and 80°C ( Figures 4A,B ). While at 120°C, PVCR is reduced and, thus, leads to the disappearance of NDR due to enhanced thermionic emission current and variation of energy band (Kathalingam et al, 2015 ). As shown in the schematic energy band diagram ( Figure 4C ), the Fermi level moved up and entered into the bandgap at 120°C.…”

Section: Resultsmentioning

confidence: 99%

Negative Differential Resistance of n-ZnO Nanorods/p-degenerated Diamond Heterojunction at High Temperatures

Sang

Liu

et al. 2020

Front. Chem.

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In the present study, an n-ZnO nanorods (NRs)/p-degenerated diamond tunneling diode was investigated with regards to its temperature-dependent negative differential resistance (NDR) properties and carrier tunneling injection behaviors. The fabricated heterojunction demonstrated NDR phenomena at 20 and 80 • C. However, these effects disappeared followed by the occurrence of rectification characteristics at 120 • C. At higher temperatures, the forward current was increased, and the turn-on voltage and peak-to-valley current ratio (PVCR) were reduced. In addition, the underlying mechanisms of carrier tunneling conduction at different temperature and bias voltages were analyzed through schematic energy band diagrams and semiconductor theoretical models. High-temperature NDR properties of the n-ZnO NRs/p-degenerated diamond heterojunction can extend the applications of resistive switching and resonant tunneling diodes, especially in high-temperature, and high-power environments.

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Observation of room temperature negative differential resistance in solution synthesized ZnO nanorod

Cited by 5 publications

References 11 publications

Investigation on nickel ferrite nanowire device exhibiting negative differential resistance — a first-principles investigation

Investigation on nickel ferrite nanowire device exhibiting negative differential resistance — a first-principles investigation

Chitosan based memory devices: filamentary versus interfacial resistive switching

Negative Differential Resistance of n-ZnO Nanorods/p-degenerated Diamond Heterojunction at High Temperatures

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