Negative differential resistance of pseudomorphic InGaAs quantum-wire FETs

Sugaya, Takeyoshi; Yamada, Takashi; Ogura, Masahiko; Komori, Kazuhiro; Yonei, Kenji

doi:10.1016/j.jcrysgro.2004.12.116

Cited by 3 publications

(1 citation statement)

References 11 publications

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“…15) In particular, three-terminal NDR devices have been studied intensively because of their high controllability. [16][17][18][19][20][21][22][23] We discuss the origin of the observed NDR characteristics by considering both the realspace and k-space transfer processes of electrons.…”

Section: Introductionmentioning

confidence: 99%

Negative Differential Resistance in InGaAs/InAlAs Nanoscale In-Plane Structures

Komatsuzaki

Higashi

Kyougoku

et al. 2010

Jpn. J. Appl. Phys.

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Nanoscale in-plane structure devices are fabricated by electron beam lithography followed by electron cyclotron resonance reactive ion etching. We investigate the negative differential resistance (NDR) of InGaAs/InAlAs in-plane structure devices. The NDR appears in the current–voltage (I–V) characteristics of simple two-terminal in-plane short-channel devices. NDR characteristics depend on the effective channel width of in-plane gate transistors and become more pronounced when the channel conductance is increased by applying gate voltages. In a short-channel in-plane gate transistor, a more prominent NDR is observed and the NDR appears even at room temperature. In addition, the NDR onset voltage shifts to lower voltages when the channel length decreases. The NDR phenomenon is most likely caused by the real-space transfer of electrons from a high mobility channel to a low mobility layer.

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Section: Introductionmentioning

confidence: 99%

Negative Differential Resistance in InGaAs/InAlAs Nanoscale In-Plane Structures

Komatsuzaki

Higashi

Kyougoku

et al. 2010

Jpn. J. Appl. Phys.

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Investigation of InP/In0.65Ga0.35As metamorphic p-channel doped-channel field-effect transistor

Tsai

2016

Superlattices and Microstructures

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Influence of band non-parabolicity on the quantized gate capacitance in δ-doped MODFED of III–V and related materials

Bhattacharya

Dan

Mahapatra

2008

Journal of Applied Physics

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y P 1−x ␦-doped modulation field effect devices, whose channel electrons obey the three, two, and the parabolic energy band models of Kane. The quantized gate capacitance has been investigated by including the effects of electric subbands under quantum mechanical treatment on GaAs, InSb, and In 1−x Ga x As y P 1−y lattices matched to InP as channel materials. The oscillatory dependence of the quantized gate capacitance as a function of surface electric field and gate bias signatures directly the two-dimensional quantum confinement of the carriers. The influence of the band non-parabolicity of the confined carriers significantly influences the value of the gate capacitance. The result of the gate capacitances for the parabolic energy band model forms a special case of our generalized theoretical formalism.

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Negative differential resistance of pseudomorphic InGaAs quantum-wire FETs

Cited by 3 publications

References 11 publications

Negative Differential Resistance in InGaAs/InAlAs Nanoscale In-Plane Structures

Negative Differential Resistance in InGaAs/InAlAs Nanoscale In-Plane Structures

Investigation of InP/In0.65Ga0.35As metamorphic p-channel doped-channel field-effect transistor

Influence of band non-parabolicity on the quantized gate capacitance in δ-doped MODFED of III–V and related materials

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