2011
DOI: 10.1002/sia.3483
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Negative ion yield and sputter yield variations for Cs+ bombardment of Si with O2 gas flooding

Abstract: We have investigated whether negative secondary ion yields from Cs + sputtered silicon might be improved by simultaneous O 2 gas flooding, which lowers the sputter yield of the silicon, and thus, might increase the cesium content at the surface. The composition at the sputtered surface is derived from quantitative measurements of the ratios of O/Si and Cs/Si in the total emitted flux using the recently developed oxygen 18 method [1] and sputter yield measurements, respectively (with X Si + X Cs + X O = 1). The… Show more

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Cited by 5 publications
(4 citation statements)
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“…Despite a low transmission (<3%), chemical maps at the nanoscale were obtained, where y 0 III precipitates with a size < 30 nm were detected and imaged. This high lateral resolution was obtained without degrading the high mass resolution of 4500 routinely obtained on 28 Si. Localized chemical analyses of specific features at the grain boundaries and on segregated areas are also reported.…”
Section: Discussionmentioning
confidence: 93%
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“…Despite a low transmission (<3%), chemical maps at the nanoscale were obtained, where y 0 III precipitates with a size < 30 nm were detected and imaged. This high lateral resolution was obtained without degrading the high mass resolution of 4500 routinely obtained on 28 Si. Localized chemical analyses of specific features at the grain boundaries and on segregated areas are also reported.…”
Section: Discussionmentioning
confidence: 93%
“…Thus, the duty cycle is a factor to be applied to the transmission of maximum 1 (100%). In our measurements, a mass range of 0À125 μ was used, which gives a duty cycle of 14% for 28 Si. Depending on the mass of the secondary-ion and the mass range selected, the duty cycle varies between a few percent and just over 30% from small masses (<150 μ).…”
Section: Resultsmentioning
confidence: 99%
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