Negative Luminescence

Negative luminescence ͑NL͒ and positive luminescence in terahertz frequencies were observed from a compensated p-type Ge under various levels of pulse excitations at cryogenic temperatures. The NL spectra accompanying an S-type negative differential resistance phenomenon were attributed to the reduced emission transitions from the excited states to the ground states of the acceptors during the excitation. A possible excitation mechanism is also presented according to the measured data.

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Silicon emitter for shortwave infrared (1.6–3 μm) band by light down-conversion

Malyutenko

Bogatyrenko

Tykhonov

2010

Applied Physics Letters

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No silicon-based light emitting diodes exist for shortwave infrared (1.6–3.0 μm) band due to bandgap limitations imposed on luminescence wavelengths. To alleviate this problem, we propose a photonic device in which below-bandgap radiation comes as the result of the thermal emission enhanced by free charge carriers generated by the above-bandgap excitation (light downconversion). With this approach, we demonstrate high-temperature (T>300 K) large-area (20×20 mm2) Si emitter with stable high-power output (∼100 mW/cm2) and prescribed spectrum inside the 1.6–3 μm band for applications such as dynamic scene simulation devices operating at frequencies above 1 kHz.

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Negative Luminescence

Cited by 5 publications

References 45 publications

Nonequilibrium, Dual‐Band and Emission Devices

Nonequilibrium, Dual‐Band and Emission Devices

Negative and positive electroluminescence from a compensated p-type germanium in terahertz frequencies

Silicon emitter for shortwave infrared (1.6–3 μm) band by light down-conversion

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