Negative resistance and bistable switching in very thin Al2O3 films

Bardhan, Abheek; Srivastava, Prabhat Kumar; Bhattacharya, D.

doi:10.1016/0040-6090(74)90188-6

Cited by 4 publications

(4 citation statements)

References 11 publications

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“…Owing to the need for high-k and low leakage current materials in DRAM and CMOS, high-k dielectrics of large band gaps (highly insulating) have been intensively investigated. There have been some efforts to detail the nature of resistive switching in such dielectrics including Al 2 O 3 [34,[157][158][159][160][161][162][163], and Gd 2 O 3 [164][165][166] One should therefore confirm the polarity dependence of resistive switching in AAO carefully before drawing the conclusion that unipolar and bipolar switching coexist in this system. (iii) There have been some publications on resistive switching phenomena in Al 2 O 3 films in contact with a Ti electrode, which is oxygen-reactive [160,167].…”

Section: Large Band Gap High-k Dielectric Oxidesmentioning

confidence: 99%

See 1 more Smart Citation

Emerging memories: resistive switching mechanisms and current status

Jeong¹,

Thomas²,

Katiyar³

et al. 2012

Rep. Prog. Phys.

954

648

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The resistance switching behaviour of several materials has recently attracted considerable attention for its application in non-volatile memory (NVM) devices, popularly described as resistive random access memories (RRAMs). RRAM is a type of NVM that uses a material(s) that changes the resistance when a voltage is applied. Resistive switching phenomena have been observed in many oxides: (i) binary transition metal oxides (TMOs), e.g. TiO(2), Cr(2)O(3), FeO(x) and NiO; (ii) perovskite-type complex TMOs that are variously functional, paraelectric, ferroelectric, multiferroic and magnetic, e.g. (Ba,Sr)TiO(3), Pb(Zr(x) Ti(1-x))O(3), BiFeO(3) and Pr(x)Ca(1-x)MnO(3); (iii) large band gap high-k dielectrics, e.g. Al(2)O(3) and Gd(2)O(3); (iv) graphene oxides. In the non-oxide category, higher chalcogenides are front runners, e.g. In(2)Se(3) and In(2)Te(3). Hence, the number of materials showing this technologically interesting behaviour for information storage is enormous. Resistive switching in these materials can form the basis for the next generation of NVM, i.e. RRAM, when current semiconductor memory technology reaches its limit in terms of density. RRAMs may be the high-density and low-cost NVMs of the future. A review on this topic is of importance to focus concentration on the most promising materials to accelerate application into the semiconductor industry. This review is a small effort to realize the ambitious goal of RRAMs. Its basic focus is on resistive switching in various materials with particular emphasis on binary TMOs. It also addresses the current understanding of resistive switching behaviour. Moreover, a brief comparison between RRAMs and memristors is included. The review ends with the current status of RRAMs in terms of stability, scalability and switching speed, which are three important aspects of integration onto semiconductors.

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Section: Large Band Gap High-k Dielectric Oxidesmentioning

confidence: 99%

“…Mechanisms for resistive switching in Al 2 O 3 have been proposed including the phase transition of Al 2 O 3 due to Joule heat [162], the trapping and detrapping of electronic carriers [162], and the formation and rupture of CFs [163]. Gd 2 O 3 is also a resistive switching material.…”

Section: Large Band Gap High-k Dielectric Oxidesmentioning

confidence: 99%

Emerging memories: resistive switching mechanisms and current status

Jeong¹,

Thomas²,

Katiyar³

et al. 2012

Rep. Prog. Phys.

954

648

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“…CC-NDR can be caused by different mechanisms, such as impact ionization [1][2][3] and metal-insulator transitions [4][5][6][7], but also by thermally-activated or thermally-assisted mechanisms, such as Schottky emission and Poole-Frenkel conduction [8][9][10]. Although materials systems with CC-NDR have been found since the 60s [11][12][13][14][15][16][17][18], the promise of energy-efficient, neuromorphic hardware to perform in-memory and on-edge processing [19][20][21][22][23][24], has renewed interest and brought about a new wave of research on this phenomenon [4,[25][26][27][28][29]. For instance, selector devices are being implemented in memristor arrays, where the highly non-linear NDR helps to reduce leakage and sneak path currents [30].…”

Section: Introductionmentioning

confidence: 99%

An epitaxial perovskite as a compact neuristor: electrical self-oscillations in TbMnO₃ thin films

Salverda

Hamming-Green

Noheda

2022

J. Phys. D: Appl. Phys.

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Developing materials that can lead to compact versions of artificial neurons (neuristors) and synapses (memristors) is the main aspiration of the nascent neuromorphic materials research field. Oscillating circuits are interesting as neuristors, as they emulate the firing of action potentials. Here we present room-temperature self-oscillating devices fabricated from epitaxial thin films of semiconducting TbMnO3. We show that the Negative Differential Resistance (NDR) regime observed in these devices, orginates from transitions across the electronic band gap of the semiconductor. The intrinsic nature of the mechanism governing the oscillations gives rise to a high degree of control and repeatability. Obtaining such properties in an epitaxial perovskite oxide opens the way towards combining self-oscillating properties with those of other piezoelectric, ferroelectric, or magnetic perovskite oxides in order to achieve hybrid neuristor-memristor functionality in compact heterostructures.

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“…Molecule-induced bistable switching of PTJs is of particular interest in molecular electronics since electrically actuated switches are among the most basic components for memory and logic. , At high voltages (on the order of at least 3 V), as prepared rf sputtered and thermally annealed aluminum oxide PTJs , are also known to exhibit switching phenomena; however, these phenomena tend to be associated with uncontrolled junction breakdown, semipermanent phase transitions within the metal−insulator−metal structure, or from filling and emptying of impurity or defect trap states within the oxide film − In these junctions, switching and memory phenomena arose from bulk film effects, such as field and/or thermally assisted film restructuring and metal filament formation.…”

Section: Introductionmentioning

confidence: 99%

Differential Conductance Switching of Planar Tunnel Junctions Mediated by Oxidation/Reduction of Functionally Protected Ferrocene

et al. 2004

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Planar tunnel junctions were fabricated by self-assembling 1,1'- ferrocenedicarboxylic acid (FDCA) onto native oxides of thermally deposited aluminum films and subsequently depositing a second aluminum film. Junctions were characterized using Reflection-Absorption Fourier Transform Infrared Spectroscopy (RAIRS) and current-voltage (I-V) spectroscopy. Before deposition of the second aluminum film, RAIRS of FDCA and ferrocenecarboxylic acid (FCA) films revealed COO(-), C=O, and Fc ring stretching modes, indicating that both types of molecules can interact strongly with the oxide and remain intact. After deposition, systems exhibited prominent COO(-) modes and weakened C=O modes, indicating further reaction with aluminum/aluminum oxide. Fc ring modes persisted in FDCA systems but disappeared in FCA systems, suggesting that the second COOH group in the FDCA molecule can act as a protecting group for the ferrocene moiety. Cyclic I-V measurements of FDCA tunnel junction systems revealed very strong ( approximately 10-fold) hysteretic differential conductance switching that was both reversible and stable. Control measurements using as prepared junctions, as well as junctions containing 1,6-hexanedioic acid, 1,9-nonanedioic acid, 1,4-dibenzoic acid, or FCA revealed only very weak ( approximately 10%) differential conductance changes. We attribute FDCA junction switching to barrier profile modifications induced by oxidation/reduction of the functionally protected ferrocene moieties.

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Negative resistance and bistable switching in very thin Al2O3 films

Cited by 4 publications

References 11 publications

Emerging memories: resistive switching mechanisms and current status

Emerging memories: resistive switching mechanisms and current status

An epitaxial perovskite as a compact neuristor: electrical self-oscillations in TbMnO₃ thin films

Differential Conductance Switching of Planar Tunnel Junctions Mediated by Oxidation/Reduction of Functionally Protected Ferrocene

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Negative resistance and bistable switching in very thin Al2O3 films

Cited by 4 publications

References 11 publications

Emerging memories: resistive switching mechanisms and current status

Emerging memories: resistive switching mechanisms and current status

An epitaxial perovskite as a compact neuristor: electrical self-oscillations in TbMnO3 thin films

Differential Conductance Switching of Planar Tunnel Junctions Mediated by Oxidation/Reduction of Functionally Protected Ferrocene

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An epitaxial perovskite as a compact neuristor: electrical self-oscillations in TbMnO₃ thin films