Negatively charged silicon nitride films for improved p-type silicon surface passivation by low-temperature rapid thermal annealing

Wang, Peng; Jin, Shuai; Lü, Tao; Cui, Can; Yang, Deren; Yu, Xuegong

doi:10.1088/1361-6463/ab2ab9

Cited by 14 publications

(7 citation statements)

References 51 publications

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“…A chemical synthesis that produces a colloidal dispersion with reasonable size control is one of the most widely used techniques [100,218,219] , b) [220][221][222] , c) [222][223][224] , d) [225,226] , e) [227] , f ) [228] , g) [229] , h) [230] , i) [231] , j) [232] , k) [233] , l) [234] , m) [235] , n) [236] .…”

Section: Embedding Qds and Nps In Thin-film Matrices And Their Relati...mentioning

confidence: 99%

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Silicon Compound Nanomaterials: Exploring Emission Mechanisms and Photobiological Applications

Dutt,

Salinas,

Martínez-Tolibia

et al. 2023

Advanced Photonics Research

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After the first visible photoluminescence (PL) from porous silicon (pSi), continuous efforts are made to fabricate Si‐based compound nanomaterials embedded in matrices such as oxide, nitride, and carbide to improve optical performance and industrial acceptability. These nanomaterials’ functional and desired properties (nanoparticles and quantum dots embedded in matrices) can vary significantly when embedded in technologically relevant matrices. However, exploring the exact emission mechanisms is one of the remaining challenges from the past few decades. To cover this gap, this review discusses the morphological and optoelectronic properties of Si‐based compound nanomaterials and their correlation with the quantum confinement effect and different surface states to find precise emission mechanisms. One of the biggest challenges of using silicon nanomaterials in the biological sector is the development of sensitive materials of low/acceptable toxicity for identifying target analytes either inside/outside the biological platforms. In this scenario, silicon‐based compound matrices can offer different characteristics and advantages depending on their size configurations and PL emission mechanisms. On the other hand, a proper understanding of these multifaceted silicon nanomaterials’ optical properties (emission mechanisms) can be exploited for pathogen detection and in situ applications in cells and tissues, embarking on a new era of bioimaging technology.

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Section: Embedding Qds and Nps In Thin-film Matrices And Their Relati...mentioning

confidence: 99%

“…Schematic summary of the main configurations of Si-based nanomaterials based on deposition techniques and their applications. References are numbered as indicated: a)[100,218,219] , b)[220][221][222] , c)[222][223][224] , d)[225,226] , e)[227] , f )[228] , g)[229] , h)[230] , i)[231] , j)[232] , k)[233] , l)[234] , m)[235] , n)[236] .…”

mentioning

confidence: 99%

Silicon Compound Nanomaterials: Exploring Emission Mechanisms and Photobiological Applications

Dutt,

Salinas,

Martínez-Tolibia

et al. 2023

Advanced Photonics Research

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“…26 • Antireflection coating and passivation layers in Si solar cells. 5,41,49 • Protection/encapsulation layers, sacrificial layers, diffusion barriers, and functional structures, including top encapsulation layers in IC devices and three-dimensional (3D) devices. 22 • Protection/encapsulation layers and spacers in DRAM.…”

Section: Ald Modeling and Mechanistic Studiesmentioning

confidence: 99%

“…• Diffusion barriers, passivation layers, etch and chem-mechanical polishing (CMP) stops, spacers, dielectric layers, and hard masks in IC devices. 18,41,67,70 • Gate spacers and sidewall spacers in DRAM. 28 • Charge trap layers in 3D-NAND flash devices.…”

Section: Solar Cells and Optical Waveguidesmentioning

confidence: 99%

Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: State-of-the-Art Processing Technologies, Properties, and Applications

Kaloyeros¹,

Pan

Goff

et al. 2020

ECS J. Solid State Sci. Technol.

103

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Accelerating interest in silicon nitride thin film material system continues in both academic and industrial communities due to its highly desirable physical, chemical, and electrical properties and the potential to enable new device technologies. As considered here, the silicon nitride material system encompasses both non-hydrogenated (SiNx) and hydrogenated (SiNx:H) silicon nitride, as well as silicon nitride-rich films, defined as SiNx with C inclusion, in both non-hydrogenated (SiNx(C)) and hydrogenated (SiNx:H(C)) forms. Due to the extremely high level of interest in these materials, this article is intended as a follow-up to the authors’ earlier publication [A. E. Kaloyeros, F. A. Jové, J. Goff, B. Arkles, Silicon nitride and silicon nitride-rich thin film technologies: trends in deposition techniques and related applications, ECS J. Solid State Sci. Technol., 6, 691 (2017)] that summarized silicon nitride research and development (R&D) trends through the end of 2016. In this survey, emphasis is placed on cutting-edge achievements and innovations from 2017 through 2019 in Si and N source chemistries, vapor phase growth processes, film properties, and emerging applications, particularly in heterodevice areas including sensors, biointerfaces and photonics.

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“…Surface passivation is of vital importance for achieving higher conversion efficiency of crystalline silicon solar cells. [1][2][3] In previous studies, many materials have been adopted for passivation layers, including hydrogenated amorphous silicon (a-Si:H), [4] silicon oxide (SiO x ), [5,6] silicon nitride (SiN x ), [7] aluminum oxide (Al 2 O 3 ), [8,9] hafnium oxide (HfO 2 ), [10] organic materials, [11] and so on. Among them, Al 2 O 3 exhibits excellent passivation capability due to the low interfacial defect density and a high density of negative fixed charges (Q f ¼ 10 12 to 10 13 cm À2 ) which are located very close to the Si/Al 2 O 3 interface.…”

Section: Introductionmentioning

confidence: 99%

Ultrathin Aluminum Oxide Films Induced by Rapid Thermal Annealing for Effective Silicon Surface Passivation

Wang

Liu

et al. 2021

Physica Rapid Research Ltrs

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A novel method of preparing ultrathin aluminum oxide films by rapid thermal annealing (RTA) treatment for effective silicon surface passivation is proposed. The high‐temperature RTA processing (750–825 °C) for tens of seconds in an oxygen atmosphere completely converts the thermally evaporated aluminum metal nanofilms (1–5 nm) on crystalline silicon to aluminum oxide (Al2O3) films, with a thin SiOx layer formed at the interface between the silicon and the Al2O3. The generated Al2O3 film can provide superior passivation quality for the silicon surface, even better than that obtained by the thermal atomic layer deposition technique. Moreover, the growth kinetics of the Al2O3 passivating film indicates that it is a diffusion‐controlled activation process, with an energy barrier of 3.3 eV for aluminum ions diffusing across the metal/oxide interface.

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Negatively charged silicon nitride films for improved p-type silicon surface passivation by low-temperature rapid thermal annealing

Cited by 14 publications

References 51 publications

Silicon Compound Nanomaterials: Exploring Emission Mechanisms and Photobiological Applications

Silicon Compound Nanomaterials: Exploring Emission Mechanisms and Photobiological Applications

Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: State-of-the-Art Processing Technologies, Properties, and Applications

Ultrathin Aluminum Oxide Films Induced by Rapid Thermal Annealing for Effective Silicon Surface Passivation

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