Network structure of a-SiO:H layers fabricated by plasma-enhanced chemical vapor deposition: Comparison with a-SiC:H layers

Sato, Masanori; King, Sean W.; Lanford, W. A.; Henry, Patrick; Fujiseki, Takemasa; Fujiwara, Hiroyuki

doi:10.1016/j.jnoncrysol.2016.03.004

Cited by 12 publications

(3 citation statements)

References 60 publications

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“…As a result the density of film decreases with increases in MFR. The decrease in height of the 〈ε 2 〉 peak is in agreement with the experimental results of others [30][31][32]. The broadening parameter (C) in 〈ε 2 〉 is also greater at higher MFR.…”

Section: Ellipsometrysupporting

confidence: 91%

Enhanced performance of amorphous silicon solar cells (110 °C) on flexible substrates with a-SiC:H(p) window layer and H₂ plasma treatment at n/i and i/p interface

Madaka

Kanneboina

Agarwal

2018

Semicond. Sci. Technol.

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The a-Si:H based n-i-p solar cells were fabricated on flexible polyethylene terephthalate (PET), polyimide (PI) and rigid glass substrates with a-SiC:H(p) as a window layer using radio frequency plasma enhanced chemical vapor deposition technique. The effect of methane flow rate (MFR) on the structural and optoelectronic properties of a-SiC:H(p) films deposited at a low substrate temperature (T s ) 110 °C were studied on Corning 1737 glass (glass) substrate. The influence of hydrogen plasma treatment (HPT) at n/i and i/p interface of solar cells was also investigated. The HPT at interfaces was found to minimize interface defects and enhance the optical and electrical properties of the solar cell. The solar cell with a-SiC:H(p) as a window layer with HPT at interfaces have shown improvement in the series resistance (R s ), shunt resistance(R sh ), open circuit voltage (V oc ) and fill factor (FF) as compared to the solar cells fabricated with conventional a-Si:H(p). The efficiencies of fabricated solar cell at 110 °C on flexible PET and PI are 3.36 and 4.06%, which is close to 4.42% on rigid glass. Our results demonstrate that, a-SiC:H(p) as a window layer with HPT at n/i and i/p interfaces can be considered as a practical method to produce the a-Si:H based solar cells on low cost flexible substrates at low substrate temperature.

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Section: Ellipsometrysupporting

confidence: 91%

Enhanced performance of amorphous silicon solar cells (110 °C) on flexible substrates with a-SiC:H(p) window layer and H₂ plasma treatment at n/i and i/p interface

Madaka

Kanneboina

Agarwal

2018

Semicond. Sci. Technol.

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“…In hydrogenated SiOC, the critical coordination is 2.4 at a minimum under pore interconnectivity, as determined using percolation theory . This means that H incorporation affects in SiC and SiO:H films . The coordination and interconnectivity parameters can be used for the prediction of the mechanical properties of films .…”

Section: Challengesmentioning

confidence: 99%

Review of methods for the mitigation of plasma‐induced damage to low‐dielectric‐constant interlayer dielectrics used for semiconductor logic device interconnects

Miyajima

Ishikawa

Sekine

et al. 2019

Plasma Processes & Polymers

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The developments in advanced interconnect technology for semiconductor logic devices for the mitigation of plasma‐induced damage to low‐dielectric‐constant (low‐k) materials, including fluorosilicate glass and carbon‐doped silicon oxide is reviewed. The chemical bond structures of low‐k materials are summarized to help mitigate the k value degradation caused by moisture uptake after plasma processes. Damage suppression is accomplished by integrating deposition chemistries, pattern etch transfer, and post‐etch cleaning technologies. On the basis of analyses results, a discussion on the bond engineering of low‐k materials and their degradation during plasma processing is given. Challenges facing low‐k interconnect technology are also addressed.

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“…However, the addition of a fourth element—hydrogen (eg a‐SiONH) via various polymer‐derived, thermal, and plasma‐enhanced chemical vapor deposition (PECVD) methods leads to a much more diverse array of technologically important materials and applications. Thin films of a‐SiO x , a‐SiNH, and a‐SiNOH are also extensively utilized in the semiconductor industry for a wide variety of electronic, optoelectronic, photovoltaic, thermal, mechanical, micro‐electromechanical, and biological applications to create surface passivation, solid‐state electrolytes, anti‐reflection coatings, membranes, gate dielectrics, etch stops, diffusion barriers, moisture sensors, micromechanical cantilevers, and biomineralization layers . Despite the wide‐ranging applications and reasonably reliable performance of such devices, little is known regarding the actual thermodynamic stability of these materials.…”

Section: Introductionmentioning

confidence: 99%

Thermodynamics of amorphous SiN(O)H dielectric films synthesized by plasma‐enhanced chemical vapor deposition

et al. 2017

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Thin films of amorphous SiNH (a-SiNH) and amorphous SiNOH (a-SiNOH) synthesized by plasma-enhanced chemical vapor deposition (PECVD) are used extensively in the semiconductor industry, but little is known regarding their thermodynamic stability, and there are several long-term reliability issues for these materials. To address the stability issues, a detailed thermodynamic investigation has been conducted on a series of a-SiNH, and a-SiNOH dielectric films. Hightemperature oxidative drop-solution calorimetry in molten sodium molybdate solvent at 1075 K was utilized to determine the formation enthalpies from the elements and from crystalline counterparts/gaseous products. Together with entropy data derived from cryogenic heat capacity measurements, we confirmed that the incorporation of more hydrogen and oxygen leads to more negative enthalpies and Gibbs free energies of formation from elements. Coupled with FTIR structural analysis, the thermochemical data suggest that the Si-H 2 chain structure and Si-O-Si bonding configurations provide the system with extra thermodynamic stability. However, the Gibbs free energies of formation from crystalline constituents and gaseous products are either positive or nearly zero, indicating that these amorphous films are not stable against decomposition, which may cause problems in high-temperature applications.

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Network structure of a-SiO:H layers fabricated by plasma-enhanced chemical vapor deposition: Comparison with a-SiC:H layers

Cited by 12 publications

References 60 publications

Enhanced performance of amorphous silicon solar cells (110 °C) on flexible substrates with a-SiC:H(p) window layer and H₂ plasma treatment at n/i and i/p interface

Enhanced performance of amorphous silicon solar cells (110 °C) on flexible substrates with a-SiC:H(p) window layer and H₂ plasma treatment at n/i and i/p interface

Review of methods for the mitigation of plasma‐induced damage to low‐dielectric‐constant interlayer dielectrics used for semiconductor logic device interconnects

Thermodynamics of amorphous SiN(O)H dielectric films synthesized by plasma‐enhanced chemical vapor deposition

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Network structure of a-SiO:H layers fabricated by plasma-enhanced chemical vapor deposition: Comparison with a-SiC:H layers

Cited by 12 publications

References 60 publications

Enhanced performance of amorphous silicon solar cells (110 °C) on flexible substrates with a-SiC:H(p) window layer and H2 plasma treatment at n/i and i/p interface

Enhanced performance of amorphous silicon solar cells (110 °C) on flexible substrates with a-SiC:H(p) window layer and H2 plasma treatment at n/i and i/p interface

Review of methods for the mitigation of plasma‐induced damage to low‐dielectric‐constant interlayer dielectrics used for semiconductor logic device interconnects

Thermodynamics of amorphous SiN(O)H dielectric films synthesized by plasma‐enhanced chemical vapor deposition

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Enhanced performance of amorphous silicon solar cells (110 °C) on flexible substrates with a-SiC:H(p) window layer and H₂ plasma treatment at n/i and i/p interface

Enhanced performance of amorphous silicon solar cells (110 °C) on flexible substrates with a-SiC:H(p) window layer and H₂ plasma treatment at n/i and i/p interface