2012 Eighth International Conference on Computational Intelligence and Security 2012
DOI: 10.1109/cis.2012.52
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Neuron-MOS Based Schmitt Trigger with Controllable Hysteresis

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Cited by 4 publications
(4 citation statements)
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“…A novel differential Schmitt circuit with adjustable hysteresis value is proposed by Yuan [7]. Recently, some Schmitt triggers using neuron-MOS devices have been investigated [8,9]. In this paper, a new design scheme of binary Schmitt trigger with n-channel neuron-MOS transistor is proposed.…”
Section: Introductionmentioning
confidence: 98%
“…A novel differential Schmitt circuit with adjustable hysteresis value is proposed by Yuan [7]. Recently, some Schmitt triggers using neuron-MOS devices have been investigated [8,9]. In this paper, a new design scheme of binary Schmitt trigger with n-channel neuron-MOS transistor is proposed.…”
Section: Introductionmentioning
confidence: 98%
“…The Schmitt trigger (ST) has been used in both analog and digital domains to improve the noise immunity of circuits, thanks to its programmable or hard-wired hysteresis characteristics [5][6][7][8][9][10][11]. This characteristic has been utilized in many CMOS circuit blocks including oscillators [12][13][14][15], input/output pads of integrated circuits [16,17], image sensors [18][19][20][21][22][23][24], triangular carrier-based PWM modulators [25], subthreshold SRAMs [26][27][28][29], CMOS transceivers [30][31][32][33][34], impedance-to-frequency converters [35], digital to analog converters (DACs) [36], neuron-based analog to digital converters (ADCs) [37][38][39], powerline communication systems [40], binary logic circuits (i.e., adders [41] and gates [42]), and sensors [43,44].…”
Section: Introductionmentioning
confidence: 99%
“…We tune the time constant of the integrator so the switching period of the comparator is well below the period of V in but higher than the period of undesired noise components. As shown in Figure 6a, our Schmitt trigger is composed of two current-starved inverters arranged in a topology inspired by [38]. The second current-starved inverter in the cascade uses an FG pFET bias to limit the short-circuit current.…”
mentioning
confidence: 99%
“…Mainly, the ratio of C FB to the total capacitance on the FG node (C T ) controls the spacing between the low-high (V T,H ) and high-low (V T,L ) transitions, while the charge trapped on the FG (Q FG ) sets the low-high output transition level (V T,H ). We can derive compact (approximate) expressions for V T,H and V T,L by solving for the transition voltage of the first inverter in the cascade (i.e., the DC point where the output of the first inverter V p = V int ) using the square-law models for MOSFETs operating in above-threshold saturation [38]:…”
mentioning
confidence: 99%