Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications

Simanjuntak, Firman Mangasa; Ohno, Takeo; Chandrasekaran, Sridhar; Tseng, Tseung‐Yuen; Samukawa, Seiji

doi:10.1088/1361-6528/ab7fcf

Cited by 41 publications

(21 citation statements)

References 51 publications

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“…The comparative advantage of the NPs’ incorporation is the ability to emulate both STP and LTP artificial synaptic responses in one single switching mode [ 55 , 56 ]. Similar results have been also reported for other material configurations [ 57 , 58 , 59 ]. Moreover, we have to underline that Pt NPs facilitate the charge transfer from the BE to SiO 2 , since a lower interface barrier is formed [ 60 ], in terms of height, which increases the transmission probability for electron tunneling.…”

Section: Discussionsupporting

confidence: 91%

Emulating Artificial Synaptic Plasticity Characteristics from SiO2-Based Conductive Bridge Memories with Pt Nanoparticles

Bousoulas

Papakonstantinopoulos

Kitsios

et al. 2021

Micromachines

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The quick growth of information technology has necessitated the need for developing novel electronic devices capable of performing novel neuromorphic computations with low power consumption and a high degree of accuracy. In order to achieve this goal, it is of vital importance to devise artificial neural networks with inherent capabilities of emulating various synaptic properties that play a key role in the learning procedures. Along these lines, we report here the direct impact of a dense layer of Pt nanoparticles that plays the role of the bottom electrode, on the manifestation of the bipolar switching effect within SiO2-based conductive bridge memories. Valuable insights regarding the influence of the thermal conductivity value of the bottom electrode on the conducting filament growth mechanism are provided through the application of a numerical model. The implementation of an intermediate switching transition slope during the SET transition permits the emulation of various artificial synaptic functionalities, such as short-term plasticity, including paired-pulsed facilitation and paired-pulse depression, long-term plasticity and four different types of spike-dependent plasticity. Our approach provides valuable insights toward the development of multifunctional synaptic elements that operate with low power consumption and exhibit biological-like behavior.

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Section: Discussionsupporting

confidence: 91%

Emulating Artificial Synaptic Plasticity Characteristics from SiO2-Based Conductive Bridge Memories with Pt Nanoparticles

Bousoulas

Papakonstantinopoulos

Kitsios

et al. 2021

Micromachines

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“…In order to realize memristor-based neuromorphic system, the device should exhibit gradual change in conductance states; the gradual behavior is also termed as analog switching, meanwhile, abrupt change in conductance states is called as digital switching. 12,13 Henceforth, careful engineering in the formation and rupture of conductive filament/bridge to achieve gradual switching is required. 14 Several techniques are recently reported that digital switching can be transformed into analog switching in memristor devices either by using annealing processes, different doping concentrations, or different top electrodes.…”

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confidence: 99%

Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications

Saleem

Simanjuntak

Chandrasekaran

et al. 2021

Applied Physics Letters

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An oxidizable metal diffusion barrier inserted between the active metal electrode and the switching layer decreases the electroforming voltage and enhances the switching stability and synaptic performances in TaOx-based conducting bridge memristor devices. The TiW barrier layer avoids an excessive metal ion diffusion into the switching layer whilst the TiWOx interfacial layer formed between the barrier and switching layer. It modulates the oxygen vacancy distribution at top interface and contributes to the formation and rupture of metal ions-oxygen vacancies hybrid conducting bridge. We observe that the device that relies upon non-hybrid (metal ions only) conducting bridge suffers from the poor analogous performance. Meanwhile, the device made with the barrier layer is capable of 2-bit memory and robust 50 stable epochs. The TaOx also acts as resistance suppressing and thermal enhancement layer, which helps to minimize overshooting current. The enhanced analog device with high linear weight update shows multilevel cell characteristics and stable 50 epochs. To validate the neuromorphic characteristic of the devices, a simulated neural network of 100 synapses is used to recognize 10x10 pixel images.

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“…Nevertheless, some studies have shown that the modification and manipulation of the TCO electrodes may trigger the oxygen vacancy concentration, thus, enhancing the device performance [242], [256], [257]. Various methods were proposed to deposit ZnO switching layer on TCO electrodes, like the solution-processed (sol-gel) method [167], [189], [246], [258]- [260], high-power pulse laser deposition (PLD) [238], [261]- [263], atomic layer deposition (ALD) [264], thermal-roll lamination technique [265], hydrothermal growth [266], RF magnetron sputtering [53], [151], [202], [205], [267]- [270], metal-organic chemical vapor deposition [271]- [273]. The introduction of gallium into zinc oxide shows to improve the transmittance of the film.…”

Section: F Transparent/flexible Zno Based Rrammentioning

confidence: 99%

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

et al. 2021

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Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed. The use of doping elements, multi-layered structures, suitable bottom and top electrodes, controlling the deposition materials, and the impact of hybrid structure for enhancing the switching dynamics are discussed. The potentials of ZnO-based RRAM for invisible and bendable devices are also covered. ZnO-based RRAM has the potential for possible application in bio-inspired cognitive computational systems. Thus, the synapse capability of ZnO is presented. The sneak-path current issue also besets ZnO-based RRAM crossbar array architecture. Hence, various attempts to subdue the bottleneck have been shown and discussed in this article. Interestingly, ZnO provides not only helpful memory features. However, it demonstrates the ability to be used in nonvolatile multifunctional memory devices. Also, this review covers various issues like the effect of electrodes, interfacial layers, proper switching layers, appropriate fabrication techniques, and proper annealing settings. These may offer a valuable understanding of the study and development of ZnO-based RRAM and should be an avenue for overcoming RRAM challenges.

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Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications

Cited by 41 publications

References 51 publications

Emulating Artificial Synaptic Plasticity Characteristics from SiO2-Based Conductive Bridge Memories with Pt Nanoparticles

Emulating Artificial Synaptic Plasticity Characteristics from SiO2-Based Conductive Bridge Memories with Pt Nanoparticles

Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

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