Neutron-diffraction studies of zinc-blende MnTe epitaxial films and MnTe/ZnTe superlattices: The effect of strain and dilution on a strongly frustrated fcc antiferromagnet

Tm, Giebultowicz; Klosowski, P.; Samarth, N.; Luo, Hongyu; Furdyna, J. K.; Jj, Rhyne

doi:10.1103/physrevb.48.12817

Cited by 110 publications

(62 citation statements)

References 44 publications

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“…Zinc-blende MnTe is a type-III antiferromagnet (AF3) with a Néel temperature of 65 K [13]. The difference to the simpler type-I structure (AF1) constists in the different geometrical sequence of the (001) planes with the planar antiferromagnetic order: In the AF1 structure this is given by an A-B-A-B-A sequence of (001) planes, while the AF3 phase has a twice as long period: A-B-C-D-A.…”

Section: Zinc-blende Mntementioning

confidence: 99%

“…Cubic MnTe has been investigated experimentally with various techniques and especially its magnetic [13,12] and elastic [15] properties are well characterized. In the present context, it is important to mention that the photoemission experiments place the occupied Mn-3d level at about 3.5 eV below the VBM [16,17] whereas the experimental exchange splitting of Mn-3d levels is about 6.9 eV [18].…”

Section: Zinc-blende Mntementioning

confidence: 99%

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Electronic structure of zinc‐blende MnTe within the GW approximation

Fleszar

Potthoff

Hanke

2007

Phys. Status Solidi (c)

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Key words Magnetic semiconductors, electronic structure. PACS 71.55. Gs, 71.70.Gm Using the local spin-density approximation (LSDA) and the (non self-consistent) GW approach, the (quasiparticle) band structure is calculated for MnTe in zinc-blende geometry. Different parameters characterizing the electronic structure are computed for an antiferromagnetic and the ferromagnetic phase and compared with the experiment. The strong Hubbard-type repulsion on the Mn-3d orbitals and the p-d hybridization are seen to be responsible for substantial defects found in the LSDA picture. It is discussed to which extent these can be improved upon by means of the GW approach.

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Section: Zinc-blende Mntementioning

confidence: 99%

Section: Zinc-blende Mntementioning

confidence: 99%

Electronic structure of zinc‐blende MnTe within the GW approximation

Fleszar

Potthoff

Hanke

2007

Phys. Status Solidi (c)

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“…Mn-based II-VI DMS) is antiferromagnetic (AFM) superexchange [4]. This d-d exchange may produce a spinglass phase in a certain temperature and composition range [1][2][3], as well as a truly long ranged AFM order [5,6]. For the systems *e-mail: andrzej.twardowski@fuw.edu.pl (203) with high free holes concentration carrier induced ferromagnetic (FM) coupling occurs [7,8].…”

Section: Introductionmentioning

confidence: 99%

Diluted Magnetic III-V Semiconductors

Twardowski

2000

Acta Phys. Pol. A

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During recent years diluted magnetic semiconductors based on III-V compounds have been of considerable interest. In this respect we review the basic properties of these materials, which are nearly exclusively Mn-based systems, such as GaMnAs, InMnAs, GaMnSb, and GaN:Mn. We discuss the nature of Mn impurity. Different Mn centers are considered and experimental pieces of evidence suggesting the dominating role of Mn (d5 ) configuration are given. Then we analyze s, p -d exchange, together with resulting magnetooptical properties (in particular absorption edge slitting for heavily p-type GaMnAs). The coupling between Mn ions (d-d exchange) and ferromagnetic ordering observed in InMnAs and GaMnAs is the next subject. Some mechanisms responsible for this ordering are presented. Finally we discuss transport properties and some selected problems of quantum structures based on III-V diluted magnetic semiconductors.

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“…Zinc-blende MnTe (which in a bulk form possesses a long-range antiferromagnetic order of the AF-III type, see, e.g., [1]) was selected as a suitable material for the magnetically active component. As the non-magnetic spacers, thin layers of CdTe were used.…”

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confidence: 99%

Raman Characterization of MBE-Grown Layered MnTe/CdTe Structures

et al. 1997

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Raman scattering measurements on (MnTe)8 /(Cd 0.64 Ζn 0.30Τc)8 multilayer grown by MBE method and on various (MnTe)n/(CdTe)ι2 multilayers (where n = 8,12,16, 24) were performed at low temperatures. In the The objective of this work is to analyse the Raman scattering in superlattices (multilayers) involving thin films of a magnetic semiconductor separated by a non-magnetic spacer. Zinc-blende MnTe (which in a bulk form possesses a long-range antiferromagnetic order of the AF-III type, see, e.g., [1]) was selected as a suitable material for the magnetically active component. As the non-magnetic spacers, thin layers of CdTe were used. The lattice parameter values for both compounds do not differ too much (the lattice mismatch is close to above 2%) so the strain effects are expected to be insignificaut.Recently, it was demonstrated that the Raman scattering is a very effective tool for investigation of magnetic excitations (magnons) in thick, MBE-grown MnTe [2]. In order to make the Raman scattering intensity measurable, we used multilayers with thin MnTe layers having a constant thickness separated by 12 monolayers of nonmagnetic CdTe. Thus according to the recent neutron scattering *This work has been partially supported by PB750/T0S/95/09 grant from the Committee for Scientiflc Research (Poland). †Permanent address:

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Neutron-diffraction studies of zinc-blende MnTe epitaxial films and MnTe/ZnTe superlattices: The effect of strain and dilution on a strongly frustrated fcc antiferromagnet

Cited by 110 publications

References 44 publications

Electronic structure of zinc‐blende MnTe within the GW approximation

Electronic structure of zinc‐blende MnTe within the GW approximation

Diluted Magnetic III-V Semiconductors

Raman Characterization of MBE-Grown Layered MnTe/CdTe Structures

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