Neutron irradiation effects on metal-gallium nitride contacts

Katz, E. J.; Lin, Chung-Han; Qiu, Jie; Zhang, Zhichun; Mishra, Umesh K.; Cao, Lei; Brillson, L. J.

doi:10.1063/1.4869552

Cited by 18 publications

(15 citation statements)

References 34 publications

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“…Comparison between Schottky diodes and high electron-mobility transistors suggests that the degradation in both types of devices is predominantly due to carrier removal and mobility degradation caused by radiation-induced defect centers in the crystal lattice, with interface disorder playing a relatively insignificant part in overall device degradation. [145][146][147][148][149][150][151][152][153][154][155] In summary, the main effects of radiation damage in GaN-based HEMTs can be noted as follows:…”

Section: Ecs Journal Of Solid State Science and Technology 5 (2) Q35mentioning

confidence: 99%

“…2,[136][137][138][139][140][141][142][143][144][145][146][147][148][149][150][151][152][153][154] The majority of deep electron traps in GaN are most likely dislocation-related and that probably explains the prominent role of dislocations in the trapping, gate leakage, subthreshold current leakage, and degradation in AlGaN/GaN HEMTs. The gate leakage in AlGaN/GaN HEMTs seems to be promoted by open-core screw dislocations and, in InAlN/GaN Q48…”

Section: Changes In Gan-based Hemt Performance After Irradiationmentioning

confidence: 99%

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Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

285

130

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Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high power and high frequency applications, with higher breakdown voltages and two dimensional electron gas (2DEG) density compared to their GaAs counterparts. Specific applications for nitride HEMTs include air, land and satellite based communications and phased array radar. Highly efficient GaNbased blue light emitting diodes (LEDs) employ AlGaN and InGaN alloys with different compositions integrated into heterojunctions and quantum wells. The realization of these blue LEDs has led to white light sources, in which a blue LED is used to excite a phosphor material; light is then emitted in the yellow spectral range, which, combined with the blue light, appears as white. Alternatively, multiple LEDs of red, green and blue can be used together. Both of these technologies are used in high-efficiency white electroluminescent light sources. These light sources are efficient and long-lived and are therefore replacing incandescent and fluorescent lamps for general lighting purposes. Since lighting represents 20-30% of electrical energy consumption, and because GaN white light LEDs require ten times less energy than ordinary light bulbs, the use of efficient blue LEDs leads to significant energy savings. GaN-based devices are more radiation hard than their Si and GaAs counterparts due to the high bond strength in III-nitride materials. The response of GaN to radiation damage is a function of radiation type, dose and energy, as well as the carrier density, impurity content and dislocation density in the GaN. The latter can act as sinks for created defects and parameters such as the carrier removal rate due to trapping of carriers into radiation-induced defects depends on the crystal growth method used to grow the GaN layers. The growth method has a clear effect on radiation response beyond the carrier type and radiation source. We review data on the radiation resistance of AlGaN/GaN and InAlN/GaN HEMTs and GaN-based LEDs to different types of ionizing radiation, and discuss ion stopping mechanisms. The primary energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects in GaN are discussed. The carrier removal rates are a function of initial carrier concentration and dose but not of dose rate or hydrogen concentration in the nitride material grown by Metal Organic Chemical Vapor Deposition. Proton and electron irradiation damage in HEMTs creates positive threshold voltage shifts due to a decrease in the two dimensional electron gas concentration resulting from electron trapping at defect sites, as well as a decrease in carrier mobility and degradation of drain current and transconductance. State-of-art simulators now provide accurate predictions for the observed changes in radiation-damaged HEMT performance. Neutron irradiation creates more extended damage regions and at high doses leads to Fermi level pinning while 60 Co γ-ray irradiation leads to much smaller changes in HEMT drain ...

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Section: Ecs Journal Of Solid State Science and Technology 5 (2) Q35mentioning

confidence: 99%

Section: Changes In Gan-based Hemt Performance After Irradiationmentioning

confidence: 99%

Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

285

130

View full text Add to dashboard Cite

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“…From I–V measurements the Schottky barrier height of the capacitor structure was calculated according to the thermionic emission theory and found to be qΦ B = 1.07 eV, with an ideality factor of n = 1.12, which is close to unity and comparable to reference values . Hence, the good quality of the contacts is confirmed.…”

Section: Resultsmentioning

confidence: 62%

Oxygen and hydrogen profiles and electrical properties of unintentionally doped gallium nitride grown by hydride vapor phase epitaxy

Garbe

Abendroth

Stöcker

et al. 2015

Crystal Research and Technology

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Commercially available hydride vapor phase epitaxy gallium nitride (GaN) is characterized with the aim to correlate the oxygen and hydrogen secondary ion mass spectrometry profiles of a GaN wafer with the electrical properties of the sample. A GaN layer model, including doping profile and mobility, is derived, utilizing electrical (capacitance–voltage, Hall), structural (high resolution X‐ray diffraction) and optical (polarized infrared spectroscopy) methods. Oxygen and hydrogen are easily incorporated during hydride vapor phase epitaxy growth of GaN. Oxygen is an n‐type dopant in GaN, whereas hydrogen may passivate some of the donors. Electrical and optical properties correlate with a low defect concentration top GaN layer and a high defect concentration GaN interlayer.

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“…Their further studies 125 revealed that both fast and thermal neutrons introduce recombination centers in GaN, forming an insulating phase between GaN and metal contact, raising the Schottky contact ideality factor, increasing the Ohmic contact sheet resistance, and lowering the current transport for both contacts. Above the threshold fluence, thermal neutrons can introduce thermal spikes and elevated temperatures that drive GaN out diffusion and reaction with metal contacts.…”

Section: à2mentioning

confidence: 99%

Review of using gallium nitride for ionizing radiation detection

Wang

Mulligan

Brillson

et al. 2015

Applied Physics Reviews

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With the largest band gap energy of all commercial semiconductors, GaN has found wide application in the making of optoelectronic devices. It has also been used for photodetection such as solar blind imaging as well as ultraviolet and even X-ray detection. Unsurprisingly, the appreciable advantages of GaN over Si, amorphous silicon (a-Si:H), SiC, amorphous SiC (a-SiC), and GaAs, particularly for its radiation hardness, have drawn prompt attention from the physics, astronomy, and nuclear science and engineering communities alike, where semiconductors have traditionally been used for nuclear particle detection. Several investigations have established the usefulness of GaN for alpha detection, suggesting that when properly doped or coated with neutron sensitive materials, GaN could be turned into a neutron detection device. Work in this area is still early in its development, but GaN-based devices have already been shown to detect alpha particles, ultraviolet light, X-rays, electrons, and neutrons. Furthermore, the nuclear reaction presented by 14N(n,p)14C and various other threshold reactions indicates that GaN is intrinsically sensitive to neutrons. This review summarizes the state-of-the-art development of GaN detectors for detecting directly and indirectly ionizing radiation. Particular emphasis is given to GaN's radiation hardness under high-radiation fields.

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Neutron irradiation effects on metal-gallium nitride contacts

Cited by 18 publications

References 34 publications

Review—Ionizing Radiation Damage Effects on GaN Devices

Review—Ionizing Radiation Damage Effects on GaN Devices

Oxygen and hydrogen profiles and electrical properties of unintentionally doped gallium nitride grown by hydride vapor phase epitaxy

Review of using gallium nitride for ionizing radiation detection

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