Neutron transmutation doped far-infrared p-Ge laser

Abstract

A far-infrared p-type germanium laser with active crystal prepared from ultra pure single-crystal Ge by neutron transmutation doping ͑NTD͒ is demonstrated. Calculations show that the high uniformity of Ga acceptor distribution achieved by NTD significantly improves average gain. The stronger ionized impurity scattering due to high compensation in NTD Ge is shown to have insignificant negative impact on the gain at the moderate doping concentrations sufficient for laser operation. Experimentally, this first NTD laser is found to have lower current-density lasing threshold than the best of a number of melt-doped laser crystals studied for comparison.

Wavelength selection for the far-infrared p-Ge laser using etched silicon lamellar gratings

“…[14]. Indium ohmic contacts were applied to opposite [1 −1 0] lateral faces with an ultrasonic soldering iron [14]. Electric ÿeld pulses with 1-2 s duration were applied to an active crystal in the [1 −1 0] direction with a thyratron pulser at repetition rates of 1-8 Hz.…”

“…End faces were hand polished at and parallel within 30 arcsec by a technique described in Ref. [14]. Indium ohmic contacts were applied to opposite [1 −1 0] lateral faces with an ultrasonic soldering iron [14].…”

Estimation of liquid phase diffusion coefficients of gallium and antimony in germanium from segregation data in crystal growth experiments

“…Refs. [1][2][3][4][5][6][7]. In addition, due to its moderate melting temperature and reactivity, germanium is also widely used as a model semiconductor in the field of crystal growth.…”

Inter-Valence-Band Hot Hole Laser in Two-Dimensional Delta-Doped Homoepitaxial Semiconductor Structures

“…The authors have worked for many years to advance the technology of inter-valence-band hot hole lasers based on bulk rods of p-Ge having ∼cubic centimeter active volume. [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] One of us (AVM) has been involved in this research since its beginnings more than two decades ago. 20 Features of this laser are broad tunability (1.5-4.2 THz) with high spectral density in a single device ( Fig.…”